诊断中性束加速电源打火检测与保护电路的研究与设计

通过检测打火短路过程中产生较大的di/dt 和du/dt 来实现高压电源的打火短路保护。在研究了中性束加速电源控制和保护特点的基础上, 设计了诊断中性束加速电源在打火短路过程中的di/dt 和du/dt 的检测电路和相应的保护电路, 实现提前对加速器高压电源打火短路的保护。     

The intruder orbitals in superdeformed bands and alignment additivity of odd–odd nuclei in the region

The particle-number conserving (PNC) method for treating the cranked shell model with monopole and quadrupole pairing correlations is used to study the superdeformed (SD) bands observed in odd–odd nuclei in the A190 mass region. Spins are assigned to the levels in these bands. The microscopic mechanism of the ω evolution of the dynamic moment of inertia J⁽²⁾ for these SD bands are analyzed. In particular, the major roles of the j_15/2 neutron and i_13/2 proton orbitals played in the SD bands are investigated in detail by contributions to J⁽²⁾ from each cranked orbital and interference terms between two cranked orbitals. Additivity in the A190 mass region is investigated. The experimental evidence for additivity of alignments in ¹⁹²Tl can be reproduced by our calculations.     

Structural characteristics of ultra-low k SiO<Subscript>2</Subscript> thin films prepared using a molecular template

Nanoporous SiO₂ thin films with ultra-low dielectric constants were synthesized using a molecular template method. Uniform films with pore size between 10 and 20 nm were obtained as observed by N₂ adsorption/desorption isotherms and transmission electron microscopy. Fourier transform infrared spectroscopy (FTIR) and differential thermal analysis were carried out to investigate the effect of n-hexane washing on structural properties before and after the surface modification process. The results showed that –OH bonds were substituted with –CH₃ bonds in the films as a result of modification of trimethylchlorosilane (TMCS)/n-hexane solution. Four kinds of model were used to analyze the relationship between porosity and dielectric constant of the films, where the dielectric constant was determined from capacitance-voltage measurements. The investigation indicated that the corresponding relationship was in accord with that estimated by the Rayleigh model.     

基于抖动测试的AFDX端到端延迟紧性修正

AFDX引入虚拟链路(Virtual Link)实现物理带宽资源的逻辑分隔。由于数据帧的异步到达和多路复用输出造成虚拟链路的时延抖动现象,并最终导致流量端到端延迟分析的不确定性。本文提出了一种基于抖动测试值的网络演算紧缩方法。通过分布式测试,获得虚拟链路在网络中的实际传输抖动,并以此为基础,建立了流量传输精确化模型,通过流量模型的逐级修正,使端到端延迟计算结果逐级精确化。通过将抖动实际值与理论分析结果相结合,提供了网络演算悲观度及其扩散影响度量的直观对比,提高了延迟计算的紧性。     

硅单粒子位移损伤多尺度模拟研究

本文结合分子动力学方法和动力学蒙特卡罗方法, 研究了单个粒子入射硅引起的位移损伤缺陷的产生和演化过程; 基于Shockley-Read-Hall理论计算了单个粒子入射引起的位移损伤缺陷导致的泄漏电流增加及其演化过程, 比较了缺陷退火因子与泄漏电流退火因子之间的差异, 并将计算结果与实验值进行了对比. 结果表明, 计算泄漏电流时, 仅考虑一种缺陷的情况下缺陷退火因子与泄漏电流退火因子相同, 考虑两种缺陷类型情况下二者在数值上有所区别, 但缺陷退火因子仍能在一定程度上反映泄漏电流的退火行为. 分子动力学模拟中采用Stillinger-Weber势函数和Tersoff势函数时缺陷退火因子和泄漏电流退火因子与实验结果一致, 基于Stillinger-Weber势函数的计算结果与实验值更为接近.     

碳纳米管包裹的硅纳米线复合结构的热稳定性研究

采用经典分子动力学方法模拟一定直径[111]晶向的硅纳米线填充不同扶手椅型单壁碳纳米管复合结构的加热过程, 通过可视化和能量分析的方法判断复合结构中硅纳米线和碳纳米管的热稳定性. 通过讨论碳纳米管的空间限制作用和分子间相互作用力的关系, 对碳纳米管和硅纳米线的热稳定性变化进行初步解释. 研究发现碳纳米管中硅纳米线的热稳定性和碳纳米管的直径关系密切: 当管径较小时, 硅纳米线的热稳定性有所提高, 当管径增大到一定大小时, 硅纳米线的热稳定性会突然显著地下降, 直到硅纳米线与管壁不存在分子间相互作用力, 硅纳米线的热稳定性才会恢复. 而硅纳米线填充到碳纳米管中对碳纳米管的热稳定性有着明显的降低作用.     

Beam-based calibrations of the BPM offset at C-ADS Injector Ⅱ

Beam-based BPM offset calibration was carried out for Injector II at the C-ADS demonstration facility at the Institute of Modern Physics(IMP), Chinese Academy of Science(CAS). By using the steering coils integrated in the quadrupoles, the beam orbit can be effectively adjusted and BPM positions recorded at the Medium Energy Beam Transport of the Injector II Linac. The studies were done with a 2 m A, 2.1 Me V proton beam in pulsed mode.During the studies, the "null comparison method" was applied for the calibration. This method is less sensitive to errors compared with the traditional transmission matrix method. In addition, the quadrupole magnet's center can also be calibrated with this method.     

Computational studies on two novel energetic nitrogen‐rich compounds based on tetrazolone

Two novel energetic nitrogen‐rich compounds 1,4‐diaminotetrazol‐5‐one ( DATO ) and 1,4‐dinitrotetrazol‐5‐one ( DNTO ) were proposed first and studied by quantum chemistry method with B3LYP/6‐31G* level of theory. The optimized geometry, IR predicted spectrum and thermochemical parameters, frontier molecular orbitals and molecular electrostatic potential were calculated for inspecting the electronic structure, molecular stability and chemical reactivity. The important macroscopic properties including density, enthalpy of formation, detonation parameters and impact sensitivity have been predicted as well. As a result, two designed compounds DATO and DNTO possess positive enthalpy of formation (395.79 and 342.77 kJ/mol), impressive detonation parameters (D = 8.80 km/s, P = 33.69 GPa; D = 8.89 km/s, P = 34.98 GPa) superior to the remarkable explosive RDX, acceptable sensitivities and might be promising candidates of energetic materials. Copyright © 2015 John Wiley & Sons, Ltd.     

Laser-induced damage of high reflectors for Ti:sapphire laser system

A broadband (～ 176 nm, R ＞ 98%, λ0 = 800 nm) and high laser-induced damage threshold (LIDT =2.4 J/cm2) TiO2/HfO2/SiO2 high reflector (HR) for Ti:sapphire chirped-pulse amplification (CPA) laser system is fabricated by the electron beam evaporation. The refractive index and extinction coefficient of TiO2 and HfO2 films are calculated from single-layer films' transmittance spectra. The properties of HR are mainly determined by the high refractive index material. The high refractive index leads to wide bandwidth. A low extinction coefficient indicates low absorption and high LIDT. The possible damage mechanism of HR is discussed.     

横向划痕对光场调制的近场模拟

熔石英亚表面划痕对入射激光的近场调制是导致光学元件低阈值损伤的主要因素之一. 用三维时域有限差分方法研究了连续横向划痕的近场分布, 对比了尖锐截面与光滑截面场调制的差异, 着重探讨了光场调制与划痕宽深比R的关系. 研究表明: 酸蚀后的光滑截面有助于减弱近场调制, 这类划痕的R>10.0时调制较弱且相互接近, R<5.0时调制显著增强. 当R取1---3时, 亚表面的调制达最大值, 最大电场幅值为入射波幅值的4.3倍. 当R取1.0---3.5时, 缺陷附近有80%以上取样点的最大电场幅值超过入射波幅值的2倍. 随着深度的增大, 强场区具有明显的"趋肤效应": 位于划痕正下方的强场区首先往左右两侧移动, 然后移向抛物口界面以及水平界面, 同时衍生出的多条增强线诱导整个亚表面层的光场增强.