Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Large-scale preparation of thin strain-relaxed SiGe is achieved by combining ion implantation and ultrahigh vacuum chemical vapor deposition. The resulting materials were analyzed by double crystal X-ray diffraction, micro-Raman spectroscopy, and tapping mode atomic force microscope. Results revealed that 100-nm-thick Si_0.7Ge_0.3 layers with the diameter of 125 mm and full strain relaxation are successfully prepared by pre-modifying the Si substrates using 50 keV Ar⁺ ions. The strain relaxation is also disclosed to change with both ion species and energy. However, post-modification of SiGe by ion implantation will cause serious damage to the crystal structures, and result in the formation of poly-crystal SiGe.     

Phase transition and pitting corrosion behaviour for Mo—implanted aluminium

Molybdenum ions are implanted into aluminium with high ion flux and high dose at elevated temperatures of 200℃, 400℃ and 500℃. Due to the high temperature and high flux of vacancies and interstitial atoms, the atom diffusion and chemical effects are enhanced during the ion implantation. The effects increase with increasing ion flux and dose, so that new phase formation and phase transition emerge noticeably. X-ray diffraction analysis shows that when the aluminium is implanted with Mo ions at a low ion flux (25μA/cm²), the Al₅Mo alloy is formed. The atomic ratio of Mo/Al of the Al₅Mo phase is close to 20%. When the aluminium is implanted with Mo ions at a high ion flux (50μA/cm²), the phase transition from Al₅Mo to Al₁₂Mo appears, and the latter is dominant, which is determined to be the final phase. The ratio of Mo/Al in Al₁₂Mo is 7.7%. Rutherford backscattering spectroscopy indicates also that the Mo/Al atom ratio is ～7% to ～8% in Mo-implanted aluminium. The atomic ratios of the constituents in Al₅Mo and Al₁₂Mo are of stoichiometric composition for these alloys. The thicknesses of the Al₁₂Mo alloy layers for Mo-implanted Al with ion doses of 3×10¹⁷/cm² and 1×10¹⁸/cm² are 550nm and 2000nm, respectively. The pitting corrosion potential V_p increases obviously. It is clear that due to the formation of Al₁₂Mo alloy layer, the pitting corrosion resistance is enhanced.     

A virtual optical probe based on evanescent wave interference

A virtual probe is a novel immaterial tip based on the near-field evanescent wave interference and small aperture diffraction, which can be used in near-field high-density optical data storage, nano-lithography, near-field optical imaging and spectral detection, near-field optical manipulation of nano-scale specimen, etc. In this paper, the formation mechanism of the virtual probe is analysed, the evanescent wave interference discussed theoretically, and the sidelobe suppression by small aperture is simulated by the three-dimensional finite-difference time-domain method. The simulation results of the optical distribution of the near-field virtual probe reveal that the transmission efficiency of the virtual probe is 10²－10⁴ times higher than that of the nano-aperture metal-coated fibre probe widely used in near-field optical systems. The full width at half maximum of the peak, in other words, the size of virtual probe, is constant whatever the distance in a certain range so that the critical nano-separation control in the near-field system can be relaxed. We give an example of the application of the virtual probe in ultrahigh-density optical data storage.     

多元探测器在玫瑰扫描红外亚成像系统中的应用

玫瑰扫描红外亚成像系统是利用玫瑰扫描机构和红外单元探测器构成的一种亚成像系统。提出了一种利用多元小面阵来替代单元探测器的红外亚成像系统 ,可以提高成像系统的空间分辨率和帧频。分析了系统的原理 ,并给出了系统的构成框图。此外 ,就玫瑰扫描成像系统中应用多元探测器可能出现的问题进行了讨论 ,并提出了解决方案。结果表明 ,这种多元小面阵玫瑰扫描成像系统的成本远低于焦平面阵列探测器红外成像系统 ,在性能改善后是诸如末制导炮弹等低成本应用场合的理想红外成像系统     

江汉以濯之秋阳以曝之——纪念我的父亲钱临照

父亲生于20世纪初(1906年),到他去世(1999年),他几乎走过了整整一个世纪.这是一个中国近代科学萌芽、发展、壮大的世纪;这是一个中国从受到列强欺侮,国内战乱到解放后迎来了科学春天的世纪.父亲和老一辈的科学家们经过了艰苦卓绝的奋斗,终于在这一个世纪中为我国科教事业的高速发展奠定了坚实的基础.     

CsI(Tl)晶体中反冲Cs和I核Quenching?Factor的测量

许多实验对用CsI(Tl)闪烁晶体作为探测器来寻找和探测暗物质的可行性进行了研究.本工作利用8MeV单能中子轰击CsI(Tl)晶体探测器来研究Cs核和I核的QuenchingFactor.在数据处理中,运用脉冲形状甄别(PSD)方法来分辨反冲核信号和本底信号.实验结果表明,在7keV到132keV的能区中,Quench ingFactor随着反冲核能量的减少而增加.在探测暗物质的实验中,这一性质对于CsI(Tl)晶体探测器获得较低的能量阈值是很有利的.     

用计算机实现物理实验数据可视化

运用MATLAB语言处理物理实验中的数据绘图问题。     

Exponential decay lifetimes of excitons in individual single-walled carbon nanotubes

The dynamics of excitons in individual semiconducting single-walled carbon nanotubes was studied using time-resolved photoluminescence (PL) spectroscopy. The PL decay from tubes of the same (n,m) type was found to be monoexponential, however, with lifetimes varying between less than 20 and 200 ps from tube to tube. Competition of nonradiative decay of excitons is facilitated by a thermally activated process, most likely a transition to a low-lying optically inactive trap state that is promoted by a low-frequency phonon mode.     

Negative differential conductance and hot phonons in suspended nanotube molecular wires

Freely suspended metallic single-walled carbon nanotubes (SWNTs) exhibit reduced current carrying ability compared to those lying on substrates, and striking negative differential conductance at low electric fields. Theoretical analysis reveals significant self-heating effects including electron scattering by hot nonequilibrium optical phonons. Electron transport characteristics under strong self-heating are exploited for the first time to probe the thermal conductivity of individual SWNTs (approximately 3600 W m-1 K-1 at T=300 K) up to approximately 700 K, and reveal a 1/T dependence expected for umklapp phonon scattering at high temperatures.     

Knotted pictures of the GHZ states on the surface of a trivial torus

By means of the torus knot theory method, this paper presents the complete process of obtaining the knotted pictures of eight GHZ states on the surface of a trivial torus from the knotted pictures of eight basic three-qubit states on the surface of a trivial torus. Thus, we obtain eight knotted pictures 121 linkage on the ordinary plane.