利用电子束蒸发制备铝隧道结工艺研究

采用电子束蒸发的方法在Si片上制备超导铝(Al)薄膜。利用X射线衍射和直流四电极电阻法分别测试了厚度从100埃到5000埃的Al薄膜物向组成,超导转变温度(Tc)和临界电流密度(Jc)。当Al薄膜厚度大于500埃时,超导转变温度Tc=1.2K。电子束蒸发制备的Al薄膜性能良好,具有较高的结晶质量,为制备Al超导隧道结奠定了良好基础。对小面积的Al超导隧道结工艺进行了研究,该超导隧道结两层的超导体材料为Al薄膜,中间势垒层材料为Al2O3。其中Al薄膜利用电子束蒸发制备,势垒层通过直接氧化Al薄膜表面实现,该工艺和采用直接蒸发氧化物薄膜工艺相比不仅简单而且能有效防止势垒层不连续造成的弱连接。     

铒激活重掺杂银硼酸盐玻璃光谱性质

制备了铒激活的重掺杂银硼酸盐玻璃样品,测量了该样品的吸收光谱、X射线衍射谱。研究结果表明样品中没有金属银簇或金属银纳米粒子存在。应用Judd-Ofelt理论计算了该玻璃中的Er³⁺离子的J-O 参数,计算了辐射跃迁几率、辐射跃迁寿命及⁴I_13/2能级的量子效率。发现银引入到硼酸盐玻璃后,降低了基质的声子能量,提高了基质的折射率,增加了Er³⁺的⁴I_13/2量子效率和发射截面积,从而增强了1.5 μm光发射。同时该玻璃样品1.5 μm光发射有较宽的半峰全宽,约为80 nm,但量子效率仍然较低。     

New two-mode intermediate momentum-coordinate representation with quantum entanglement and its application

We construct four linear composite operators for a two-particle system and give common eigenvectors of those operators. The technique of integration within an ordered product (IWOP) of operators is employed to prove that those common eigenvectors are complete and orthonormal. Therefore, a new two-mode intermediate momentum-coordinate representation which involves quantum entanglement for a two-particle system is proposed and applied to some two-body dynamic problems. Moreover, the pure-state density matrix | ξ ₁ ,ξ ₂ >_C,DC,D< ξ ₁ ,ξ ₂ | is a Radon transform of Wigner operator.     

基于p1-p2与a1+a2共同本征态的相干纠缠态表象的构建及性质

利用有序算符乘积内的积分技术（IWOP）,建立了一种称之为相干纠缠态的两粒子体系的新表象,研究了这种新表象的性质,从理论上探讨了这种相干纠缠态的产生方法.结果表明：本文建立的这种p₁-p₂与a₁+a₂的共同本征态|p,β〉,既具有相干态的特性,又体现了纠缠态的特征,具有超完备性,完全可以作为一个表象使用. 物理上可以用光分束器来实现|< 关键词： IWOP技术 相干纠缠态表象 分束器     

液态硝基甲烷热分解行为及压力效应的第一性原理研究

采用基于密度泛函理论的第一性原理分子动力学方法对液态硝基甲烷的热分解行为进行了模拟,结合各产物布居数随时间的演化,讨论了热分解初期可能发生的3种反应,即分子内/分子间的质子迁移反应和C—N键的断裂.在长时间（30 ps）的模拟过程中,H₂O是主要产物.研究了液态硝基甲烷在不同密度（压力）条件下热分解的动力学行为.发现不同密度（压力）条件下液态硝基甲烷热分解呈现明显不同的变化趋势,并给出了解释. 关键词： 硝基甲烷 分子动力学 热分解 压力效应     

低栅极电压控制下带有phenyltrimethoxysilane单分子自组装层的有机薄膜晶体管场效应特性研究

制作了底栅极顶接触有机薄膜晶体管器件,60 nm的pentacene被用作有源层,120 nm热生长的SiO₂作为栅极绝缘层.通过采用不同自组装修饰材料对器件的有源层与栅极绝缘层之间的界面进行修饰,如octadecyltrichlorosilane （OTS）,phenyltrimethoxysilane （PhTMS）,来比较界面修饰层对器件性能的影响.同时对带有PhTMS修饰层的OTFTs器件低栅极电压调制下的场效应行为及其载流子的传输机理进行研究.结果得到,当|V 关键词： 有机薄膜晶体管 自组装单分子层 场效应迁移率 低栅极调制电压     

电场中里德伯原子动力学性质的半经典理论研究

利用闭合轨道理论和Poincaré截面两种方法研究了鞍点附近电场中高里德伯态Li原子的动力学性质.由于原子实的作用,体系是混沌的,闭合轨道和周期轨道在混沌体系中并存,但二者在Poincaré截面上的反映是不同的.讨论了两种半经典理论在研究混沌体系时的联系,得到了仅靠闭合轨道理论得不到的信息. 关键词： Poincaré截面 回归谱 Stark效应     

Chirality-asymmetry force between ɑ-quartz and copper block

The chirality-asymmetry macroscopic force mediated by light pseudoscalar particles between α -quartz and some achiral matter is studied. If this force between achiral source mass and α -quartz with some chirality is attractive, it will become repulsive when the chirality of the α -quartz crystal is changed. According to the tested limits of the coupling constant g_s g_p /\hbar c< 1.5× 10^-24 at the Compton wavelength λ = 10^-3 m, the force (F) between a 0.08× 0.08× 0.002 m³ block of α -quartz and a 0.08× 0.08× 0.01 m³ copper block with a separation being 0.5× 10^-3 \mbox{m} in between, is estimated from the published data at less than 4.64× 10^-24 N, i.e. F < 4.64× 10^-24 N.     

The research on suspended ZnO nanowire field-effect transistor

This paper reports that a novel type of suspended ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I--V measurements. Single-crystalline ZnO nanowires were synthesized by a hydrothermal method, they were used as a suspended ZnO nanowire channel of back-gate field-effect transistors (FET). The fabricated suspended nanowire FETs showed a p-channel depletion mode, exhibited high on--off current ratio of ～10⁵. When V_DS=2.5 V, the peak transconductances of the suspended FETs were 0.396 μS, the oxide capacitance was found to be 1.547 fF, the pinch-off voltage V_TH was about 0.6 V, the electron mobility was on average 50.17 cm²/Vs. The resistivity of the ZnO nanowire channel was estimated to be 0.96× 10²Ω cm at V_GS = 0 V. These characteristics revealed that the suspended nanowire FET fabricated by the photolithography process had excellent performance. Better contacts between the ZnO nanowire and metal electrodes could be improved through annealing and metal deposition using a focused ion beam.     

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Recently GaN-based high electron mobility transistors (HEMTs) have revealed the superior properties of a high breakdown field and high electron saturation velocity. Reduction of the gate leakage current is one of the key issues to be solved for their further improvement. This paper reports that an Al layer as thin as 3 nm was inserted between the conventional Ni/Au Schottky contact and n-GaN epilayers, and the Schottky behaviour of Al/Ni/Au contact was investigated under various annealing conditions by current--voltage (I--V) measurements. A non-linear fitting method was used to extract the contact parameters from the I--V characteristic curves. Experimental results indicate that reduction of the gate leakage current by as much as four orders of magnitude was successfully recorded by thermal annealing. And high quality Schottky contact with a barrier height of 0.875 eV and the lowest reverse-bias leakage current, respectively, can be obtained under 12 min annealing at 450°C in N₂ ambience.