The Tolerance of All-Optical Switching Based on Cascaded Second-Order Nonlinearity in PPLN APE Waveguide

Based on solving the couple mode equation numerically, the characterization of the signal power on the gate power was analyzed. And the relationship of the tolerance of the grating period and the bulk temperature on the interaction length was analyzed.     

Molecular dynamics simulation of thermodynamic properties of NaCl at high pressures and temperatures

The expansivity, constant-pressure heat capacity, and isothermal bulk modulus of sodium chloride (NaCl) have been obtained by using molecular dynamics method. The calculated thermodynamic parameters are found to be in agreement with the available experimental data. At an extended temperature and pressure ranges, these parameters have also been predicted. The thermodynamic properties of NaCl are summarized in the pressure 0-500 kbar ranges and the temperature up to 1000 K.     

Vibration analysis of a beam with PCLD Patch

An analytical approach for vibration response analysis of a beam with single passive constrained layer damping (PCLD) patch is presented. The governing equation of motion of the beam is firstly derived on the basis of an energy approach and the Lagrange equation. The noval contribution is that a third admissible function is introduced to represent the longitudinal displacements of the constraining layer in the PCLD patch when the assumed-modes method is applied for discretizing the governing equation. In conventional analytical approaches, only two admissible functions are used together with a longitudinal static equilibrium equation of a section of base beam or constraining layer. Comparison of the computational results from the proposed analytical approach and the conventional analytical approach as well as a commercial FEM code reveals that the proposed analytical approach can describe the vibration responses of the damped beam more accurately for commonly used viscoelastic material (VEM) layer in the PCLD patch while the conventional analytical approach, in general, overestimates the damping effects of the PCLD patch. The advantages and disadvantages of the proposed analytical approach and conventional analytical approach are discussed through some case studies.     

Fe/Si多层膜的层间耦合与界面扩散

对以本征Si及重掺杂ｐ型和ｎ型Si作为中间层的Fe/Si多层膜的层间耦合进行研究，并通过退火，增大Fe，Si之间的扩散，分析界面扩散对层间耦合的影响. 实验结果表明，层状结构良好的制备态的多层膜，Fe，Si之间也存在一定程度的扩散，它是影响层间耦合的 主要因素，远远超过了半导体意义上的重掺杂，使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现，在一定范围内增大Fe，Si之间的扩散，即使多层膜的层状结构已经有了相当的退化，Fe/Si多层膜的反铁磁耦合强度基本保持不变. 关键词： Fe/Si多层膜 层间耦合 界面扩散     

LD泵浦固体激光器基模振荡光的场分布噪音

通过调整泵浦光直径,使得LD端面泵浦固体激光器的振荡光工作于基模.在排除高阶横模的条件下,测量了由于热透镜的不稳定引起的光场场分布的噪音.实验发现,基模振荡光的高斯半径、光束指向角都在波动,而且光斑存在畸变波动.对一个未采取抑制措施的2W连续LD端面泵浦Nd:YAG固体激光器进行了测量.结果表明,在总功率不变的情况下,激光束峰值点附近的光强波动达到6.3%;激光的高斯半径波动达到5.8%;激光的指向角波动达到0.3mrad.     

甚高频等离子体增强化学气相沉积法沉积μc-Si∶H薄膜中氧污染的初步研究

对不同的本底真空条件下,采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅（μc_Si∶H）薄膜中的氧污染问题进行了比较研究.对不同氧污染条件下制备的薄膜样品的x射线光电子能谱与傅里叶变换红外吸收光谱测量结果表明：μc_Si∶H薄膜中,氧以Si—O，O—O和O—H三种不同的键合模式存在,不同的键合模式源自不同的物理机理.μc_Si∶H薄膜的Raman光谱、电导率与激活能的测量结果进一步显示：沉积过程中氧污染程度的不同,对μc_Si∶H薄膜的结构特性与电学特性产生显著影响；而不同氧污染对μc_Si∶H薄膜电学特性的影响不同于氢化非晶硅（a_Si:H）薄膜. 关键词： 氢化微晶硅薄膜 甚高频等离子体增强化学气相沉积 氧污染     

Si微电阻桥温度分布与热传导特性的显微Raman光谱研究

采用显微Raman光谱方法对红外目标模拟器中重掺杂Si微电阻桥单元的热传导特性进行研究，根据Si桥的实际特性建立相应的Raman散射模型，通过测量Raman峰位的移动得到高功率激光辐照下测量点的温度.对Si桥桥面分别进行了沿某些特殊线段的逐点线扫描和覆盖全部桥面的面扫描，得到各点的温升及其分布.用基于有限元分析的软件结合Si桥结构参数对各测量点的温升进行了模拟计算，其结果在热导分布的基本趋势上与实验相一致.实验细致地揭示了热导分布的局域起伏，反映出实际器件的不均匀性，为改进器件设计、优化器件性能提供了实验依据. 关键词： Raman光谱 Si桥 温度分布 热导     

强色指数的一个新的上界

给出了图的强色指数的一个新的上界，并指出几类恰好达到该上界的图，从而改进了Erodoes和Nesetri的强色指数猜想，在某种意义上证明了这个猜想。     

Superferromagnetic state of α-Fe in Fe implanted Co6Ag94 studied by Mössbauer spectroscopy

After having introduced by ion implantation ⁵⁷Fe to a local concentration of 7 at% into Co₆Ag₉₄, we observed it by conversion electron Mössbauer spectroscopy in the as-prepared state and after isochronal annealing. A superferromagnetic state is inferred, which is correlated with the ordering of the magnetic moments on the Fe clusters through chain-like or dendritic Co/Fe linear structures. The magnetic moment disordering temperature lies above 473 K.     

Slutsky定理在样本分位数的极限分布证明上的应用

为了更好地理解和应用样本分位数的极限分布,利用Slutsky定理,推导了样本分位数的极限分布.