Synthesis and Crystal Structure of Nitrogen-rich Compound: 2,5,2′-triazido-1,1′-azo-1,3,4-triazole

Abstract  The title compound 2,5,2′-triazido-1,1′-azo-1,3,4-triazole(2) has been synthesized by the reaction of 2,5,2′-trichloro-1,1′-azo-1,3,4-triazole(1) with sodium azide. Its crystal structure was determined by single-crystal X-ray diffraction. It crystallizes in triclinic, space group P−1 with a = 6.6604(13) ?, b = 6.7035(13) ?, c = 12.916 (3) ?, α = 98.13(3)°, β = 95.56(3)°, γ = 106.48° V = 541.68(18) ?³, Z = 2, C₄HN₁₇, Mr = 287.22, D _c  = 1.761 g cm⁻³, F(000) = 288 and μ(MoKa) = 0.140 mm⁻¹, the final R = 0.0553 and wR = 0.1541. X-ray analysis indicates a stronger delocalization of the azo π bond along the hypothetical N₄ moiety within the title compound than those in(E)-1,2-bis(2,6-diazido-9- azabicyclo[3.3.1]nonan-9-yl)diazene. Index abstract  The title compound 2,5,2′-triazido-1,1′-azo-1,3,4-triazole has been synthesized by the reaction of 2,5,2′-trichloro-1,1′-azo-1,3,4-triazole with sodium azide. Its crystal structure was determined by single-crystal X-ray diffraction. X-ray analysis indicates a stronger delocalization of the azo π bond along the hypothetical N4 moiety within the title compound than those in(E)-1,2-bis(2,6-diazido-9-azabicyclo[3.3.1] nonan-9-yl)diazene.      

Li<Subscript>3</Subscript>V<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>/nitrogen-doped reduced graphene oxide nanocomposite with enhanced lithium storage properties

The three-dimensional porous Li₃V₂(PO₄)₃/nitrogen-doped reduced graphene oxide (LVP/N-RGO) composite was prepared by a facile one-pot hydrothermal method and evaluated as cathode material for lithium-ion batteries. It is clearly seen that the novel porous structure of the as-prepared LVP/N-RGO significantly facilitates electron transfer and lithium-ion diffusion, as well as markedly restrains the agglomeration of Li₃V₂(PO₄)₃ (LVP) nanoparticles. The introduction of N atom also has positive influence on the conductivity of RGO, which improves the kinetics of electrochemical reaction during the charge and discharge cycles. It can be found that the resultant LVP/N-RGO composite exhibits superior rate properties (92 mA h g^?1 at 30 C) and outstanding cycle performance (122 mA h g^?1 after 300 cycles at 5 C), indicating that nitrogen-doped RGO could be used to improve the electrochemical properties of LVP cathodes for high-power lithium-ion battery application.

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Graphical abstract The three-dimensional porous Li₃V₂(PO₄)₃/nitrogen-doped reduced graphene oxide composite with significantly accelerating electron transfer and lithium-ion diffusion exhibits superior rate property and outstanding cycle performance.

     

Iterative sparse reconstruction of spectral domain OCT signal

We propose and study an iterative sparse reconstruction for Fourier domain optical coherence tomography （FD OCT） image by solving a constrained optimization problem that minimizes L-1 norm. Our method takes the spectral shape of the OCT light source into consideration in the iterative image reconstruction procedure that allows deconvolution of the axial point spread function from the blurred image during reconstruction rather than after reconstruction. By minimizing the L-1 norm, the axial resolution and the signal to noise ratio of image can both be enhanced. The effectiveness of our method is validated using numerical simulation and experiment.     

Highly stable amorphous indium‐zinc‐oxide thin‐film transistors with back‐channel wet‐etch process

The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H₂O₂)‐based etchants. Then, after etching the Mo layer, SF₆ plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, V_GS = ±30 V, V_DS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

化学气相沉积法制备Zn2GeO4纳米线及其发光性质的研究

利用化学气相沉积法（CVD）,气-液-固（VLS）生长法则在表面溅有金属Au催化剂层的1 cm×1 cm的Si片上制备三元Zn₂GeO₄纳米线。X射线衍射仪（XRD）测试结果表明,锌源与锗源质量比为8：1时可成功制备出Zn₂GeO₄纳米结构;扫描电子显微镜（SEM）测试结果表明,Zn₂GeO₄纳米线直径为100 nm,长度为10~11 μm;光致发光（PL）测试结果表明,Zn₂GeO₄纳米线在432和480 nm处具有两个发光峰,最后对其生长机理进行了分析。     

Noise reduction analysis for a stiffened finite plate

This paper presents an analytical solution for the vibration and acoustic responses of a finite stiffened plate that is covered with decoupling layers and subjected to external excitation. The theory of elasticity is used for the decoupling layer, and the stiffened plate is modeled by the plate theory and Euler–Bernoulli beam equation. Equations are constructed by the boundary conditions at the plate/coating and coating/fluid interfaces. The problem can be solved by the proposed method in this paper. Test verification shows that a good correlation exists between theoretical and test results. Thus, the theoretical study in this paper is correct. Numerical results show that shear waves insignificantly affect the structural vibration level difference (VR) under low frequencies. The noise reduction of the stiffened plate covered with decoupling layers is greatly influenced by the decoupling layer loss factor. A failure region of the vibration level difference is present in the low frequency band of the decoupling layer. Furthermore, the thickness of the decoupling layer significantly affects noise reduction.     

以PVP纳米纤维为模板采用原子层沉积法制备MgxZn1-xO纳米纤维及其光学性质研究

采用静电纺丝方法制备聚乙烯吡咯烷酮(PVP)纳米纤维,并以其为模板采用原子层沉积(ALD)方法制备不同Mg掺杂浓度的MgxZn1-xO纳米纤维。研究了不同Mg掺杂浓度对复合纳米纤维结构和光学性质的影响。利用场发射扫描电子显微镜(FESEM)、光致发光(PL)和紫外-可见光(UV-Vis)吸收谱对样品测试并进行表征分析。结果表明,Mg元素的掺入并没有改变ZnO纳米纤维的形貌,所有样品的表面形貌极其相似,只是掺杂后纤维直径有所增大;随着Mg掺杂浓度的增加吸收边逐渐发生蓝移,表明所制备MgxZn1-xO纤维的带隙具有可调节性。与此同时,在PL谱中可以观察到样品的紫外(UV)发光峰从377nm移动至362nm,且与不掺杂的样品相比,MgxZn1-xO纳米纤维的UV发光强度明显增强。通过这种方法可以合成组分可控的MgxZn1-xO纳米纤维。在ZnO中掺入Mg元素可以有效地提高ZnO-PVP纳米纤维的禁带宽度以及UV发射强度。     

应变液晶的负压光效应和反式压光效应

介绍聚合物分散液晶和应变液晶概念,给出聚合物分散液晶调光玻璃的"正压光效应"、"负压光效应"和"反式压光效应"三种效应定义.实验制备出负压光效应和反式压光效应新型应变调光玻璃样品,测试样品散射态雾度90%以上,半透明态透光率接近30%.用偏光显微术研究压光效应原理,表明对样品施加垂面按压或拉伸的应力诱导作用会引起液晶微滴中液晶分子具有某些特殊排列方式,导致样品光学性质发生显著变化.建立垂面拉伸液晶微滴模型,计算模拟所绘出的图形与偏光显微镜照片独特花样十分相似,进而合理解释了实验现象.应变液晶压光效应研究具有聚合物分散液晶基础研究意义和开发非电控调光玻璃的实际应用价值.     

基于形态滤波的心电信号去除基线漂移方法

去除基线漂移是心电信号预处理过程中的重要一步,常见方法具有计算量大、结果不佳等缺陷.本文运用形态学理论,结合心电信号特征,提出了基于形态学的心电信号基线漂移去除方法.该方法采用不同形状及尺寸的结构元素设计了两级形态学滤波器,分别对信号进行开闭、闭开级联组合运算.经验证,提出的方法能很好保持心电信号的特征形态,提高了信噪比,减小了均方差,有效去除了基线漂移噪声.     

$lt;i$gt;γ$lt;/i$gt;射线总剂量辐照效应对应变Sip型金属氧化物半导体场效应晶体管阈值电压与跨导的影响研究

分析了双轴应变Si p型金属氧化物半导体场效应晶体管(PMOSFET)在γ射线辐照下载流子的微观输运过程, 揭示了γ射线的作用机理及器件电学特性随辐照总剂量的演化规律, 建立了总剂量辐照条件下的双轴应变Si PMOSFET 阈值电压与跨导等电学特性模型, 并对其进行了模拟仿真. 由仿真结果可知, 阈值电压的绝对值会随着辐照总剂量的积累而增加, 辐照总剂量较低时阈值电压的变化与总剂量基本呈线性关系, 高剂量时趋于饱和; 辐照产生的陷阱电荷增加了沟道区载流子之间的碰撞概率, 导致了沟道载流子迁移率的退化以及跨导的降低. 在此基础上, 进行实验验证, 测试结果表明实验数据与仿真结果基本相符, 为双轴应变Si PMOSFET辐照可靠性的研究和应变集成电路的应用与推广提供了理论依据和实践基础. 关键词： 应变Sip型金属氧化物半导体场效应晶体管 总剂量辐照 阈值电压 跨导