氦原子与非对称替代氢分子碰撞(E=0.3eV)角分布计算

用密耦方法计算了非对称同位素替代分子与氦原子碰撞(He-HD,HT,DT)转动激发,当入射能量E=0.3 eV时,得到了上述碰撞体系的微分散射截面或角分布.基于上述理论计算,讨论了原子与双原子分子碰撞的同位素效应.     

LD泵浦Nd∶LuVO4/Cr4+∶YAG被动调Q激光器

采用大功率半导体激光器端面泵浦Nd∶LuVO4晶体，利用Cr4+∶YAG晶体作为可饱和吸收元件，实现了1.06 μm激光的被动调Q运转.在泵浦功率为19.1 W时，获得最高平均输出功率为4.58 W，脉冲宽度为84 ns，单脉冲能量为36.6 μJ以及峰值功率为436.2 W的激光脉冲.     

The study and applications of photochemical-dynamical gravity wave model I

A two-dimensional, nonlinear, compressible, diabatic, nonhydrostatic photochemical-dynamical gravity wave model has been advanced. The model includes diabetic process produced by photochemistry and the effect of gravity wave on atmospheric chemical species. In the horizontal direction, the pseudospectral method is used. The finite difference approximations are used in vertical direction z and time t. The FICE method is used to solve the model. The model results on small amplitude fluctuation are very close to those of linear theory, which demonstrates the correctness of the model.

     

Formation of hydrogenated amorphous carbon films from polymer pyrolysis

Free-standing and supported hydrogenated amorphous carbon films (a:C–H) were prepared upon pyrolysis of the polymer formed by ethanolamine (EA) and citric acid (CA), under an ambient atmosphere at 300 °C. EA facilitates the formation of the macroscopic films, while CA is essential for obtaining the a:C–H microstructure, which comprises a mixture of sp² and sp³ carbon. Received: 29 May 2001 / Accepted: 17 August 2001 / Published online: 20 December 2001     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

科学和艺术

科学与完美是不是一致的？科学家们是否有权使用完美这个词？至少，对于物理学家和数学家来说答案是肯定的“是”．2002年，温伯格（Steven Weinberg）写道：“近代物理学的一些重要方程式是科学知识的永久部分，甚至比它们较早出现的美丽大教堂还要经久不衰．”1960年代，狄拉克（Paul A．M．Dirac）有句名言：“完整的方程式之完美较之它们适合实验结果更为重要．”1965年诺贝尔物理学奖获得者费因曼（Richard P．Feynman）也坚信他提出的一项理论，即使该理论显得与实验数据有矛盾．1957年，他写道：“理论是优雅和完美的，重大事件是短暂的闪光．”     

The instability degree in the diemnsion of spaces of bivariate spline

In this paper, the dimension of the spaces of bivariate spline with degree less that 2r and smoothness order r on the Morgan-Scott triangulation is considered. The concept of the instability degree in the dimension of spaces of bivariate spline is presented. The results in the paper make us conjecture the instability degree in the dimension of spaces of bivariate spline is infinity.     

金属β-二酮化合物用于MOCVD法生长铁电氧化物薄膜

对用于MOCVD法生长铁电氧化物薄膜的金属β－二酮化合物的制备、结构及性质进行了评述，对它们在生长铁电薄膜中的应用现状进行了介绍，并对它们的应用前景作了展望。     

曲面平滑的自适应几何扩散

1.引 言 本文的目的是用求解偏微分方程（PDE）的方法来消除离散三角形曲面的噪声,所使用的方程是热传导方程到曲面的推广.热传导方程应用于图像处理已有二十余年的历史,有关参考文献相当丰富（见[1,11,12,19]）.众所周知,对于给定的初始图像ρ0,热传导方程　　在τ时刻的解与用Gauss滤波器Gσ（x）=　（当标准差σ=2τ,时）和ρ0作卷积的结果相同.容易看出Gρ和ρ0的卷积运算相当于对ρ0做加权平均,当标准离差σ变大时,该加权平均在一个较大的范围实现,这解释了热传导方程的滤波作用.近来热传导方程已推广到空间曲面[4,5]以及高维空间中的二维流形（见[3]）,对