吸收式光纤温度传感器的研究

提出了一种利用半导体光吸收谱随温度变化原理设计的半导体吸收式光纤温度传感器.该传感器用GaAs晶片作为温度敏感元件,以光纤作为传光介质,发光二极管作为光源,光电管作为光电转换器件.利用双光束补偿原理,消除了由于光源不稳定产生的干扰.研制出的光纤传感器具有体积小,结构简单,抗电磁干扰,灵敏度高等优点.实验表明:该传感器在－20℃~85℃温度范围内可以达到0.1℃的准确度,可以实现强电磁干扰下的高空飞行器内环境温度的测量.为进一步实现光传飞控系统中的温度测控奠定了基础.     

前馈PMD补偿实验中从偏振度椭球获得差分群时延的研究

运用偏振度(DOP)椭球法从实验的有限样点数据中获得了差分群时延和偏振主态方向,这为前馈补偿实验提供了最关键的技术因素.在实验中获得了偏振主态方向和DGD,而且当DGD较小时,从实验所获得的DGD值与理论模拟的变化趋势基本一致.结果表明当DGD较小时,可以用偏振度椭球法从实验上得到正确的DGD和偏振主态方向.     

La1-xPrxMnO3(x=0.1,0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La1-xPrxMnO3(x=0.1,0.2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO3单晶基底上.XRD结果显示薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CMR)效应,其中磁电阻比率达95%(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体系中Pr离子的价态为+4价,因此该薄膜很可能是电子掺杂的庞磁电阻体系.     

具有纵向辅助耗尽衬底层的新型横向双扩散金属氧化物半导体场效应晶体管

为了优化横向双扩散金属氧化物半导体场效应晶体管(lateral double-diffused MOSFET,LDMOS)的击穿特性及器件性能,在传统LDMOS结构的基础上,提出了一种具有纵向辅助耗尽衬底层(assisted depletesubstrate layer,ADSL)的新型LDMOS.新加入的ADSL层使得漏端下方的纵向耗尽区大幅向衬底扩展,从而利用电场调制效应在ADSL层底部引入新的电场峰,使纵向电场得到优化,同时横向表面电场也因为电场调制效应而得到了优化.通过ISE仿真表明,当传统LDMOS与ADSL LDMOS的漂移区长度都是70μm时,击穿电压由462 V增大到897 V,提高了94%左右,并且优值也从0.55 MW/cm~2提升到1.24 MW/cm~2,提升了125%.因此,新结构ADSL LDMOS的器件性能较传统LDMOS有了极大的提升.进一步对ADSL层进行分区掺杂优化,在新结构的基础上,击穿电压在双分区时上升到938 V,三分区时为947 V.     

机载腔增强吸收光谱系统应用于大气NO_2空间高时间分辨率测量

介绍了一套用于机载平台测量的非相干宽带腔增强吸收光谱(IBBCEAS)系统,并应用于实际大气NO_2空间分布的高时间分辨率观测.为满足机载测量中对时间分辨率的需求,系统采用离轴抛物面镜代替消色差透镜提高光学耦合效率;并运用Allan方差,对系统性能进行了分析.通过腔增强吸收光谱系统与长光程吸收光谱系统对实际大气NO_2的对比测试,两者线性相关系数R~2达到0.86.将IBBCEAS系统应用于机载平台,在时间分辨率为2 s的情况下,探测限达到95 ppt(1σ).通过机载观测,获得了华北地区石家庄等地上空对流层大气NO_2的廓线信息.     

具有部分本征GaN帽层新型AlGaN/GaN高电子迁移率晶体管特性分析

为了优化传统Al GaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件的表面电场,提高击穿电压,本文提出了一种具有部分本征GaN帽层的新型Al GaN/GaN HEMTs器件结构.新型结构通过在Al GaN势垒层顶部、栅电极到漏电极的漂移区之间引入部分本征GaN帽层,由于本征GaN帽层和Al GaN势垒层界面处的极化效应,降低了沟道二维电子气(two dimensional electron gas,2DEG)的浓度,形成了栅边缘低浓度2DEG区域,使得沟道2DEG浓度分区,由均匀分布变为阶梯分布.通过调制沟道2DEG的浓度分布,从而调制了Al GaN/GaN HEMTs器件的表面电场.利用电场调制效应,产生了新的电场峰,且有效降低了栅边缘的高峰电场,Al GaN/GaN HEMTs器件的表面电场分布更加均匀.利用ISE-TCAD软件仿真分析得出:通过设计一定厚度和长度的本征GaN帽层,Al GaN/GaN HEMTs器件的击穿电压从传统结构的427 V提高到新型结构的960 V.由于沟道2DEG浓度减小,沟道电阻增加,使得新型Al GaN/GaN HEMTs器件的最大输出电流减小了9.2%,截止频率几乎保持不变,而最大振荡频率提高了12%.     

A three‐crystal spectrometer for high‐energy resolution fluorescence‐detected X‐ray absorption spectroscopy and X‐ray emission spectroscopy at SSRF

A Johann‐type spectrometer for the study of high‐energy resolution fluorescence‐detected X‐ray absorption spectroscopy, X‐ray emission spectroscopy and resonant inelastic X‐ray scattering has been developed at BL14W1 X‐ray absorption fine structure spectroscopy beamline of Shanghai Synchrotron Radiation Facility. The spectrometer consists of three crystal analyzers mounted on a vertical motion stage. The instrument is scanned vertically and covers the Bragg angle range of 71.5–88°. The energy resolution of the spectrometer ranges from sub‐eV to a few eV. The spectrometer has a solid angle of about 1.87 × 0^?3 of 4π sr, and the overall photons acquired by the detector could be 10⁵ counts per second for the standard sample. The performances of the spectrometer are illustrated by the three experiments that are difficult to perform with the conventional absorption or emission spectroscopy. Copyright © 2016 John Wiley & Sons, Ltd.     

InOOH压致氢键对称化及其弹性性质

利用第一性原理研究了InOOH在高压下的氢键对称化行为及其对InOOH弹性等性质的影响.结果表明约在18 GPa时InOOH中的氢键发生了对称化转变,导致轴比率b/c对压力的斜率由负值变为正值;压缩弹性常数、非对角弹性常数、体积模量和纵波波速出现异常增加,如体积模量增加了20%—40%.高压下InOOH弹性性质呈现出更加明显的各向异性.常压下InOOH呈现韧性,且伴随着氢键对称化韧性异常增加.对畸变金红石型MOOH(M=Al,In,Ga,Fe,Cr)化合物在高压下的弹性性质转变与氢键性质转变的耦合规律进行了初探.     

掺钕微球的受激辐射激光和自受激拉曼散射

采用溶胶-凝胶法在SiO_2微球表面覆盖上一薄层Nd~(3+)掺杂SiO_2,并经电极放电熔融后形成表面光滑的高Q值微球.采用锥光纤将808 nm的抽运激光耦合入钕离子掺杂的高Q值微球形成回廊模,激发产生了1080—1097 nm波段受激辐射激光.由于所产生的激光有足够高的功率密度,在高Q SiO_2微球中激发产生了波长为1120—1143 nm一级自受激拉曼散射激光.推导了锥光纤掺钕微球组合的自受激拉曼散射的输出功率和阈值公式.描述了输出激光的特性:阈值、输出功率、线宽、边模抑制比.     

Nanoscale gap filling for phase change material by pulsed deposition and inductively coupled plasma etching

The gap filling of phase change material has become a critical module in the fabrication process of phase change random access memory (PCRAM) as the device continues to scale down to 45 nm and below. However, conventional physical vapor deposition process cannot meet the nanoscale gap fill requirement anymore. In this study, we found that the pulsed deposition followed by inductively coupled plasma etching process showed distinctly better gap filling capability and scalability than single-step deposition process. The gap filling mechanism of the deposit–etch–deposit (DED) process was briefly discussed. The film redeposition during etching step was the key ingredient of gap filling improvement. We achieved void free gap filling of phase change material on the 30 nm via with aspect ratio of 1:1 by two-cycle DED process. The results provided a rather comprehensive insight into the mechanism of DED process and proposed a potential gap filling solution for 45 nm and below technology nodes for PCRAM.