提高微晶硅薄膜太阳电池效率的研究

采用甚高频等离子体增强化学气相沉积技术制备了系列微晶硅薄膜太阳电池，指出了气体总流量和背反射电极的类型对电池性能参数的影响.电池的I-V测试结果表明：随反应气体总流量的增加，对应电池的短路电流密度、开路电压和填充因子都有很大程度的提高，结果使得电池的光电转换效率得以提高.另外，ZnO/Ag/Al背反射电极能明显提高电池的短路电流密度，进而也提高了电池的光电转换效率.对气体总流量和背反射电极类型影响电池效率的原因进行了分析. 关键词： 微晶硅薄膜太阳电池 气体流量 ZnO/Ag/Al背反射电极     

Two-dimensional Anhydrous Cadmium(II) Phthalate

The in situ hydrolysis of phthalyl-γ-glutaminyl-histidine with Cd(ClO₄)₂·6H₂O in the presence of water and methanol affords a novel two-dimensional cadmium coordination polymer, a new phase, anhydrous cadmium(II) phthalate, ( 1 ). The structure was determined by single crystal X-ray diffraction. Crystal data: P2₁/c, a = 13.8168(14), b = 7.0351(7), c = 8.2054(8) Å, β = 105.540(2)°, V = 768.43(13) ų, Z = 4, R₁ = 0.0380, wR₂ = 0.1111.     

Skew-Hermitian Triangular Splitting Iteration Methods for Non-Hermitian Positive Definite Linear Systems of Strong Skew-Hermitian Parts

By further generalizing the skew-symmetric triangular splitting iteration method studied by Krukier, Chikina and Belokon (Applied Numerical Mathematics, 41 (2002), pp. 89–105), in this paper, we present a new iteration scheme, called the modified skew-Hermitian triangular splitting iteration method, for solving the strongly non-Hermitian systems of linear equations with positive definite coefficient matrices. We discuss the convergence property and the optimal parameters of this new method in depth. Moreover, when it is applied to precondition the Krylov subspace methods like GMRES, the preconditioning property of the modified skew-Hermitian triangular splitting iteration is analyzed in detail. Numerical results show that, as both solver and preconditioner, the modified skew-Hermitian triangular splitting iteration method is very effective for solving large sparse positive definite systems of linear equations of strong skew-Hermitian parts.     

电致发光色纯性增强的硅基有机微腔

报道了硅基有机微腔的电致发光（EL）.该微腔由上半透明金属膜、中心有源多层膜和多孔硅分布Bragg反射镜（PS DBR）组成.半透明金属膜由Ag（２０nm）构成，充当发光器件的负电极和微腔的上反射镜.有源多层膜由Al (1 nm) / LiF(05 nm) /Alq3/Alq3:DCJTB/NPB/CuPc/ITO/SiO2组成，其中的Al/LiF为电子注入层，ITO为正电极，SiO2为使正、负电极电隔离的介质层.该PS DBR是采用设备简单、成本低廉且非常省时的电化学腐蚀法用单晶Si来制备的；该PS 关键词： 电化学腐蚀 电致发光 窄峰发射 硅基有机微腔     

三维光晶格中玻色凝聚气体基态波函数及干涉演化

基于Gross-Pitaevskii方程，运用有效化学势概念，研究了囚禁在组合势(由磁阱和三维光 晶格组成)中玻色凝聚气体在三维光晶格中的分布规律，并由此得到玻色凝聚气体的归 一化基态波函数.在取消组合势和仅取消光晶格而保留磁阱的两种情况下，运用传播子方 法求解出玻色凝聚气体密度分布的解析表达式.取消组合势后，理论计算所得到的玻色凝聚 气体聚随时间的演化规律与Greiner等的实验结果相一致.仅取消光晶格而保留磁阱时，研 究表明玻色凝聚气体的干涉模式呈现周期性的振荡行为.此外，在磁阱为各向异性的情况下 ， 关键词： 玻色凝聚气体 磁阱 光晶格 干涉模式     

多目标优化发射层析算法在等离子体场光谱诊断中的应用

提出一种基于多目标优化原理的发射光谱层析(EST)图像重建新算法MCIRT.通过计算机数值 模拟，考察了该算法对非对称发射系数场分布的重建效果.结果表明，与传统层析算法相比 ，MCIRT算法具有收敛快，重建精度高的优势，适合于非完全数据情况下的等离子体发射系 数场重建，并且实时性更好.作为一个应用实例, 运用谱线相对强度法重建了自由电弧等离 子体的三维温度及粒子数密度分布. 关键词： 等离子体诊断 图像重建     

强流离子束离子径向密度分布的模拟研究

对初始分布为K-V分布的离子束进行模拟研究.除观察到存在束晕现象外，还发现离子束在通 道内运行过程中，离子沿径向密度分布发生了变化. 通过延迟反馈控制，不仅可以消除束晕 ，而且只要控制参数适当，也可以使束中心部分呈均匀分布状态. 关键词： 强流离子束 束晕 填充因子 离子密度分布     

Additive Maps Preserving Nilpotent Operators or Spectral Radius

Let X be a （real or complex） Banach space with dimension greater than 2 and let B0（X） be the subspace of B（X） spanned by all nilpotent operators on X. We get a complete classification of surjective additive maps Ф on B0（X） which preserve nilpotent operators in both directions. In particular, if X is infinite-dimensional, we prove that Ф has the form either Ф（T） = cATA^-1 or Ф（T） = cAT＇A^-1, where A is an invertible bounded linear or conjugate linear operator, c is a scalar, T＇ denotes the adjoint of T. As an application of these results, we show that every additive surjective map on B（X） preserving spectral radius has a similar form to the above with ｜c｜ = 1.     

Thin film synthesis and the influence of irradiation-induced defects on the superconductivity of La1.8Sr0.2CuO4

Thin superconducting films of La_1.8Sr_0.2CuO₄ have been prepared by magnetron sputter deposition and subsequent temperature treatment. The composition of the films has been determined by Rutherford backscattering and the structure by thin film X-ray diffraction. The onset of superconductivity was about 32 K and the midpoint near 28 K. Defect production in the films by He ion bombardment revealed a drasticT _c reduction with a sensitivity similar to that observed in the Chevrel phases. Oxygen implantation and subsequent annealing led to an enhancement of theT _c onset.