避免导映照求逆的变形Newton迭代的收敛性和误差估计

主要证明了Banach空间中避免导映照求逆的变形Newton迭代在统一判定条件下的收敛性,并给出它和Newton迭代的误差估计,最后给出了两个积分方程算例。     

我国油料产品品质的近红外光谱快速检测技术研究进展

近红外光谱技术是一种快速无损检测技术,具有操作简单、检测成本低、无需化学试剂、绿色环保,以及可实现多品质参数同步检测等优点。该文综述了我国油料和食用植物油品质的近红外光谱速测技术研究进展,包括油料含油量、粗蛋白含量、脂肪酸含量等品质指标,食用油的理化指标,以及脂肪酸和食用油的真实性鉴别,并对油料产品品质的近红外光谱速测技术的发展前景进行了展望。     

用Bragg光纤测量气体浓度

基于气体的光谱吸收特性,本文提出了一种采用Bragg空芯光纤作为吸收池的新型光纤气体传感器.运用解析法和微扰分析法求解了Bragg空芯光纤中的相对灵敏系数.由于场分布主要集中在芯区,对气体损耗较为敏感,因此,这种光纤气体传感器具有灵敏度高、快速响应、结构简单的特点.耦合多个波长可实现对多种气体同时测量.     

大学物理演示实验工作的新思路、新进展

北京交通大学在“国家工科物理教学基地”建设的过程中,以建设物理演示与探索实验室为特色工作,取得了突出成绩．不仅在2004年国家工科物理教学基地验收时以其突出的特色,获得了“优秀基地”的称号,而且在2005年获得国家教学成果特等奖．我们认为这并不意味着这项工作的结束,而是以此做为将演示实验工作推向更高水平的开端．从2007年开始,我们一方面不断充实提高,保持演示实验室的动态发展;另一方面着力研发随堂演示实验并投入使用,取得了显著成效．     

光学系统时间畸变和色时间滞后的研究

本文对皮秒和飞秒技术中瞬态现象测量系统所用的特殊光学系统校正时间畸变和压缩色时间滞后的问题进行了讨论。实验证明用该方法设计研制的光学系统校正效果显着。     

相变域硅薄膜材料的光稳定性

采用RF-PECVD技术，通过改变反应气体的硅烷浓度制备了一系列不同晶化率不掺杂的硅薄膜材料，研究了工艺变化对材料结构的影响及材料光电特性同微结构的关系.随后进行了光衰退试验，在分析光照前后光电特性变化规律的基础上，认为材料中的非晶成分是导致材料光电特性衰退的主要原因.在靠近过渡区非晶一侧的硅材料比普通非晶硅稳定，衰退率较少；高晶化率微晶硅材料性能稳定，基本不存在光衰退；在靠近过渡区微晶一侧的硅材料虽然不是完全不衰退，但相比高晶化率硅材料来说更适合制备高效微晶硅电池. 关键词： 射频等离子体增强化学气相沉积 硅薄膜 Staebler-Wronski(SW)效应 稳定性     

Corrosion resistance and lubricated sliding wear behaviour of novel Ni-P graded alloys as an alternative to hard Cr deposits

Alternative process to hexavalent chromium, substitute materials and new designs are urgently needed owing to the requirement of “clean” manufacture. This comparative study was conducted to systematically investigate the corrosion resistance and lubricated sliding wear behavior of graded Ni-P alloy deposits produced from a single plating bath by electrodeposition and hard Cr deposits, using potentiodynamic polarization and reciprocating ball-on-disc tribometer. Results showed that Ni-P deposits heat-treated at 400 °C with maximum hardness exhibited more than two orders of magnitude higher corrosion resistance than hard Cr deposits in 10 wt.% HCl solution. The Stribeck curves for the heat-treated Ni-P gradient deposits and hard Cr under lubrication conditions were obtained with accurate control of normal load and sliding speed during the wear process, three main different regimes corresponding to different lubrication mechanism were identified. Heat-treated Ni-P gradient deposits showed relatively poor wear resistance than hard Cr deposits under the lubrication conditions, which may be attributed to superior oil-retaining surface structure and the unique “nodular” effect of hard Cr in wear process.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

圆窗片表面次级电子倍增效应的数值模拟

基于Monte Carlo模拟算法, 建立了粒子输运模型, 通过对盒形窗内圆窗片表面次级电子倍增现象进行数值仿真, 获得了TE₁₁模非均匀分布电场作用下次级电子倍增的规律. 结果表明: 在微波输入端, 指向窗片表面的磁场力起到了维持次级电子与窗片碰撞的作用, 在电场强度较高的区域倍增剧烈, 有质动力对倍增无贡献; 在微波输出端, 受背离窗片表面磁场力的影响, 在表面静电场较弱的情况下, 次级电子倍增不能发生; 当表面静电场足以维持单面倍增的发生, 随着传输功率的增大, 电子渡越时间增长, 有质动力使得倍增强烈的区域由强电场区逐渐转移到弱电场区域. 对利用外静电场抑制微波输入端次级电子倍增效应的方法进行了数值模拟验证. 关键词： 圆窗片 11模')" href="#">TE₁₁模 次级电子倍增 MonteCarlo模拟