Donor impurity states in zinc-blende GaN/AlGaN quantum well: Quantum confinement and laser-dressed effects

Within the framework of effective-mass approximation, the effects of a laser field on the ground-state donor binding energy in zinc-blende (ZB) GaN/AlGaN quantum well (QW) have been investigated variationally. Numerical results show that the donor binding energy is highly dependent on QW structure parameters and Al composition in ZB GaN/AlGaN QW. The laser field effects are more noticeable on the donor binding energy of an impurity localized inside the QW with small well width and low Al composition. However, for the impurity located in the vicinity of the well edge of the QW, the donor binding energy is insensible to the variation of Al composition, well width and laser field intensity in ZB GaN/AlGaN QW. In particular, the competition effects between laser field and quantum confinement on impurity states have also been investigated in this paper.     

Self-consistent charging in dielectric films under defocused electron beam irradiation

We clarify the transient and equilibrium charging characteristics of grounded dielectrics due to low-energy defocused electron beam irradiation by a three-dimensional self-consistent simulation model. The model incorporates the electron scattering, transport and trapping. Results show that some electrons can arrive at the grounded substrate due to the internal field and density gradient, forming the leakage current. The transient charging process tends to equilibrium as the surface potential decreases and the leakage electron current increases. The positive and negative space charges are distributed alternately along the beam incident direction. In the equilibrium state, the surface potential and leakage electron current decrease to stable values with increasing film thickness and the trap density, but with decreasing electron mobility. Moreover, the surface potential of the dielectric thin film exhibits a maximum negative value with variation of the beam energy; for example, under the condition of the film thicknesses 0.5 μm and 2 μm, the maximum negative values of surface potentials are -13 V and -98 V in beam energies 2 keV and 3.5 keV, respectively. However, for the thick film, the surface potential decreases with the increase in beam energy.     

基于.NET和SuperMap的干旱区Web典型地物光谱信息系统的设计与实现

地物波谱特性是遥感定量分析的基础,也是遥感基础研究的重要内容.干旱区绿洲典型地物光谱数据库对于遥感技术在土壤盐渍化方面的应用研究具有重要的意义.该文以渭干河-库车河三角洲绿洲为例,将.NET和SuperMap平台相结合,用SQL Server数据库存储数据,采用B/S模式,使用C#语言设计并开发了地物光谱信息系统,并针...     

卟啉铜接枝SiO2有机-无机复合材料及强的非线性折射率

通过卟啉配合物Meso-四(4-羧基苯基)卟啉铜(简称Cu(Ⅱ)-TCPP)中的羧基与γ-氨基丙基三乙氧基硅烷(NH₂(CH₂)₃Si(OC₂H₅)₃,KH550)中的氨基的相互化学作用,成功地把卟啉配合物接枝到KH550中,随着KH550中乙氧基的水解与聚合反应的进行,卟啉铜连接到固体介质中,从而大幅度提高了卟啉在无机固体介质中的掺杂浓度. 将反应产物与γ-(2,3-环氧丙氧基)丙基三甲氧基硅烷(CH₂CHCH₂O(CH₂)₃Si(OCH₃)₃,KH560) 相杂化,形成物化性能良好、连接卟啉的有机-无机复合材料. 用红外光谱表征了Cu(Ⅱ)-TCPP与KH550的化学反应产物,用紫外—可见吸收光谱研究Cu(Ⅱ)-TCPP的分子状态. 应用Z扫描技术研究不同Cu(Ⅱ)-TCPP掺杂浓度的复合材料的非线性光学性质,其三介非线性折射率n₂达-1.1161×10^-16 m²/W. 关键词： 非线性折射率 有机-无机复合材料 接枝 Meso-四(4-羧基苯基)卟啉铜     

基于高介电常数基板和金属结构负折射材料的设计,仿真与验证

通过将单回路镜像对称开口金属环结构印制在高介电常数基板上,实现了一种金属含量比传统负折射材料更少,"双负"通带比全介质负折射材料更宽的负折射材料.分析了高介电常数基板产生负介电常数以及"双负"通带形成的机理,通过仿真实验分析了影响"双负"通带的因素.通过制作样品验证了这一机理实现"双负"的可行性,理论分析与实验结果都表明这种方法可实现较宽频段内的"双负"通带. 关键词： 负折射材料 负介电常数 负磁导率 介质谐振器原理     

基于互注入半导体激光器的混沌输出产生17.5 Gbit/s随机码

采用两个借助光纤连接的相互注入半导体激光器,实验获取了10 GHz超宽带混沌种子信号.通过8-bit模数转换器将混沌信号转换为二进制数据流,并进行进一步的逻辑异或处理和舍弃最高有效位操作,最终获得了能顺利通过美国国家标准与技术研究院(National Institute of Standard and Technology,简记为NIST)800-22标准测试以及Diehard测试,速率达17.5 Gbit/s的高速随机码. 关键词： 随机码 混沌激光 互注入半导体激光器     

掺Bi钨酸镉单晶体发光特性的研究

用坩埚下降法(Bridgman)生长出了Bi离子掺杂的CdWO₄单晶.测定了晶体不同部位的吸收光谱、发射光谱和X射线电子能谱(XPS).Bi离子的掺入引起CdWO₄晶体的吸收边从345 nm红移到399 nm.在311 nm, 373 nm,808 nm和980 nm光的激发下,分别观测到中心波长为470 nm,528 nm,1078 nm和较弱的1504 nm四个不同发射带.Bi:CdWO₄单晶的XPS谱分别与Bi₂ 关键词： Bi离子 荧光光谱 X射线电子能谱 4单晶')" href="#">CdWO₄单晶     

Dual-band optical filter based on a single microdisk resonator

We propose and experimentally demonstrate a dual-band optical filter based on a single microdisk resonator. An analytical model is built based on the transfer matrix method and is applied to simulate the properties of such a device. Competition and interference of the dual modes in the resonator lead to dual-band filtering with high isolation. As the finite-difference time-domain simulation illustrates, two low-order resonant modes can be effectively triggered by optimizing the waveguide width and spacing gap between the compact resonator and waveguides. In experiment, a double side-coupled microdisk resonator was fabricated on a nanophotonic silicon-on-insulator platform, and dual-band bandpass filtering is realized with an optical isolation higher than 20 dB and an insertion loss lower than 2 dB. The experimental results agree well with our modeling results.     

Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD

In_0.82Ga_0.18As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 °C) In_0.82Ga_0.18As buffer layer was introduced to improve the crystalline quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the crystalline quality of the In_0.82Ga_0.18As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In_0.82Ga_0.18As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In_0.82Ga_0.18As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best crystalline quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon.     

Effect of reaction systems and surfactant additives on the morphology evolution of hydroxyapatite nanorods obtained via a hydrothermal route

Well-dispersed hydroxyapatite (HA) nanorods with different morphologies were synthesized by a hydrothermal method in oleic acid, ethanol and water reaction system, and the surfactant assisted modifications effect was also comparatively studied. The structure and morphology of samples were characterized using X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy and transmission electron microscopy (TEM), respectively. The effect of reaction systems and surfactant additives on the morphology evolution of HA nanorods were discussed in detail. The results showed that the controlled experimental conditions in the systems, such as the content ratio of oleic acid/ethanol, pH value and the content ratio of Ca/P source had an significant effect on the morphology evolution of as-prepared HA nanorods. Further, the selected surfactant additives, such as cetyltriethylammnonium bromide (CTAB), sodium dodecyl sulfate (K12) also play an important role in the formation of the uniform morphology of HA nanorods. Some possible formation mechanisms of the HA nanorods in the present reaction systems is proposed.