Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

The instability degree in the diemnsion of spaces of bivariate spline

In this paper, the dimension of the spaces of bivariate spline with degree less that 2r and smoothness order r on the Morgan-Scott triangulation is considered. The concept of the instability degree in the dimension of spaces of bivariate spline is presented. The results in the paper make us conjecture the instability degree in the dimension of spaces of bivariate spline is infinity.     

金属β-二酮化合物用于MOCVD法生长铁电氧化物薄膜

对用于MOCVD法生长铁电氧化物薄膜的金属β－二酮化合物的制备、结构及性质进行了评述，对它们在生长铁电薄膜中的应用现状进行了介绍，并对它们的应用前景作了展望。     

Solitary waves and their bifurcations of KdV like equation with higher order nonlinearity

We investigate the KdV like equation with higher order nonlinearity ut + a(1 +bun)unux + uxxx = 0with n ≥ 1, a, b ∈ R and α≠ 0. The bifurcations and explicit expressions of solitary wave solutions for theequation are discussed by using the bifurcation method and qualitative theory of dynamical systems. Thebifurcation diagrams, existence and number of the solitary waves are given.     

若干图类的邻强边染色

研究了若干图类的邻强边染色 .利用在图中添加辅助点和边的方法 ,构造性的证明了对于完全图 Kn和路 Lm 的笛卡尔积图 Kn× Lm,有χ′as(Kn× Lm) =△ (Kn× Lm) +1 ,其中△ (Kn× Lm)和χ′as(Kn× Lm)分别表示图 Kn× Lm的最大度和邻强边色数 .同理验证了 n阶完全图 Kn的广义图 K(n,m)满足邻强边染色猜想 .     

Can Millimeter Waves Generate Electroporation?

Analysis of the field distributions in a single biological cell under electromagnetic wave is given. With Debye approximation, the dielectric relaxation of each part of the cell, including the extracellular and cellular media, the cell membrane and the nuclear membrane, was taken into account. Making use of some typical parameters for a cell, the voltage across nuclear and cytoplasma membranes under electromagnetic waves are calculated up to millimeter wave frequency range. The calculated result indicates that it is unlikely to generate electroporation by present available millimeter wave sources.     

来自磁光阱中冷原子团的荧光干涉条纹及其应用

实验观察来自磁光阱中冷原子团的荧光经真空系统窗口的平板玻璃反射产生的干涉条纹，理论分析表明从从荧光干涉条纹的强度分布可获得关于俘获原子总数以及密度分布的信息。采用该方法实测了俘获原子总数，并模拟得到了不同密度分布时条纹的对比度变化。     

Proton conductivity of phosphoric acid derivative of fullerene

The proton conductive property of methano [60] fullerene diphosphoric acid has been investigated under various humidity conditions at the temperature range between 15 and 45 °C. It shows proton conductivity as high as 10⁻² S cm⁻¹ at 25 °C under relative humidity of 95%. Thermal analyses including TG–DTA and thermal desorption mass spectroscopy (TDS) confirm that the compound is thermally stable up to 200 °C. Proton conduction of the compound depends very much on humidity or water content. The logarithmic conductivity at 25 °C is increased linearly with increasing relative humidity. The activation energy (E_a) estimated from the slope of log(σT) vs. 1/T is decreased from 1.08 to 0.52 eV, as the relative humidity is increased from 40% to 75%. The humidity dependence of conductivity is discussed in the light of the observed hydration isotherm.     

电子束产生大尺度等离子体过程的数值模拟研究

建立了一个四组分一维混合模型，对电子束注入大气产生大尺度等离子体的过程进行了数值模拟.结果表明了能量为140keV、流强为50mA/cm²的注入电子束，可以产生线度为0.5m，密度为10¹²cm^-3量级的大气环境下等离子体.电子束所伴随的空间电荷效应由于等离子体的产生会很快消失，不影响后续的等离子体产生过程.电子束注入流强主要影响产生等离子体的密度，而电子束能量则同时影响其空间线度和密度. 关键词： 电子束 碰撞 电离     

光纤白光干涉仪等臂长技术研究

介绍了几种光纤干涉仪等臂长技术,比较了各自的优缺点和适用范围,对光纤干涉仪的平衡有较大的参考价值。