Stereospecific solid-state NaBH4-promoted reduction of 1-methylpentacyclo[5.4.0.02,6.03,10.05,9]undecane-8,11-dione

NaBH₄ reduction of a cage dione proceeds in a stereospecific fashion to give theendo,endo-diol. This reactivity is related to the crystal structure.     

一种漂移室定位子性能反常现象的研究

研究了一种漂移室定位子性能的反常现象,它关系到定位子的使用寿命．着重测量了暗电流和随机噪声与时间、高压及温度的关系.     

一种可实时化的多光谱图像融合系统

在多光谱摄影和光电成像技术基础上，本文提出了一种可实时化的多光谱图像融合系统。与多光谱摄影相比，不仅可实现多光谱实时化摄像，而且光谱响应进一步向近红外延伸，并引入图像处理技术。实验表明：这种技术对于增加系统的识别能力具有明显的作用，可进一步构成不同用途的新型多光谱图像融合系统。     

钨(Ⅵ)的富集与检测方法研究进展

检测W（Ⅵ）对环境科学和生命科学研究具有积极意义。本文就1991年以来国内外W（Ⅵ）的富集手段，检测方法概况作一综述，其中包括，荧光光谱法，分光光度法，原子发射光谱法，质谱法，动力学方法，极普法，化学发光法，中子活化分析及联用技术等。     

高功率飞秒脉冲激光器的进展

概述了超短激光脉冲技术发展的历程。详尽的论述了啁啾脉冲放大技术的原理和一些关键技术 ,并对当今飞秒激光器研究发展的状况进行了综述。在分析其应用前景的基础上 ,进一步指出了这一技术领域未来的发展趋势。结果表明 ,脉冲激光放大系统以后的发展方向是 :更短脉冲 ;追求更高峰值功率 ;连续光谱调谐化 ;向小型化乃至全光纤化发展。     

Stability control of the electrooptic effect with new maleimide copolymers containing photoreactive tricyanopyrrolidene‐based chromophores

New photocrosslinkable maleimide copolymers have been synthesized by the attachment of a tricyanopyrrolidene‐based chromophore. The 2‐(3‐cyano‐4‐(2‐{4‐[hexyl‐(6‐hydroxy‐hexyl)‐amino]‐phenyl}‐vinyl)‐5‐oxo‐1‐{4‐[4‐(3‐oxo‐3‐phenyl‐propenyl)‐ phenoxy]‐butyl}‐1,5‐dihydro‐pyrrol‐2‐ylidene)‐malononitrile chromophore exhibits nonlinear optical activity and contains a chalcone moiety that is sensitive to UV light (λ = 330–360 nm) for crosslink formation. The maleimide monomers have also been functionalized with chalcone moieties. The resultant copolymers exhibit great processability, and one of them shows a maximum electrooptic coefficient of 90 pm/V at 1300 nm. We could control the thermal stability of the electrooptic coefficient with the newly synthesized photoreactive copolymers successfully. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 531–542, 2007     

High-p Tγ-hadron and π0-hadron correlations in √s NN =200 GeV Au+Au collisions in PHENIX

This poster presents the PHENIX results on high-p _Tγ-hadron and π⁰-hadron correlations and shows the modification of away side jet shape by the medium. By comparing their jet shapes and yields, we see some evidence of the direct γ contribution to correlation functions.     

Effect of C layer on the structures and magnetic properties of (0 0 1)-oriented [C/CoPt]n/Ag films

CoPt/Ag and [C/CoPt]n/Ag thin films have been prepared onto the glass substrates by magnetron sputtering. We investigated the evolution of texture and magnetic properties of CoPt/Ag and [C/CoPt]n/Ag films. The results show that C-doping plays an important role in improving (0 0 1) texture, improving the order parameter S, reducing the intergrain interactions, and making the magnetization reversal mechanism more close to Stoner-Wolfarth rotational mechanism. The growth mechanism of (0 0 1) texture also seems to be related strongly to the films thickness. Our results show that the highly (0 0 1)-oriented films with ordered fct phase have a significant potential for the perpendicular media of extremely high-density recording.     

利用光反射精确测量亚共析碳钢的含碳量

本文从光学角度出发提出了一种经济实用、精度高的测量亚共析碳钢中碳的含量的新方法。阐述了该方法的测量原理，即以金相试样表面对光的反射程度来判定其含碳量，并给出了有关经验公式及数据处理方法。     

Einstein relation in chemically doped organic semiconductors

Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h