类氦离子高双激发态电子关联效应的研究

采用超球坐标方法研究了类氦O⁶⁺高双激发态的电子关联效应、能级结构、辐射跃迁率和Auger跃迁率,并采用新的量子数集K,T,A标识这些双激发态的Rydberg系列.研究表明,在超球方法的框架下,能级结构、辐射跃迁率和Auger跃迁率均显示出规律性的变化. 关键词： 电子关联效应 高双激发态 Auger跃迁率     

Structural characteristics of ultra-low k SiO<Subscript>2</Subscript> thin films prepared using a molecular template

Nanoporous SiO₂ thin films with ultra-low dielectric constants were synthesized using a molecular template method. Uniform films with pore size between 10 and 20 nm were obtained as observed by N₂ adsorption/desorption isotherms and transmission electron microscopy. Fourier transform infrared spectroscopy (FTIR) and differential thermal analysis were carried out to investigate the effect of n-hexane washing on structural properties before and after the surface modification process. The results showed that –OH bonds were substituted with –CH₃ bonds in the films as a result of modification of trimethylchlorosilane (TMCS)/n-hexane solution. Four kinds of model were used to analyze the relationship between porosity and dielectric constant of the films, where the dielectric constant was determined from capacitance-voltage measurements. The investigation indicated that the corresponding relationship was in accord with that estimated by the Rayleigh model.     

Compact laser system for atom interferometry

We describe an optical bench in which we lock the relative frequencies or phases of a set of three lasers in order to use them in a cold atom interferometry experiment. As a new feature, the same two lasers serve alternately to cool atoms and to realize the atomic interferometer. This requires a fast change of the optical frequencies over a few GHz. The number of required independent laser sources is then only three, which enables the construction of the whole laser system on a single transportable optical bench. Recent results obtained with this optical setup are also presented. PACS 32.80.Pj; 42.50.Vk; 39.20.+q     

Enhancement of light-emitting efficiency using combined plasmonic Ag grating and dielectric grating

Based on the analysis of the near-field evanescent wave in total internal reflection, the flip-chip light-emitting diode (LED) structure was proposed by placing a plasmonic Ag grating and a perforated sapphire grating in the substrate. The finite difference time domain (FDTD) method has been applied to study the spectral properties of the hybrid structure and the enhancement factor of light extraction efficiency of the LED model. From the computation examples, the effects of structure parameters on the extraction enhancement have been investigated. The results indicate that the plasmonic grating can enhance the near-field evanescent wave and couple it to propagation wave in the specific wavelength bands, which leads to the photons emitting out of the LED chip with high extraction efficiency. Due to the combined gratings used, the enhancement factor of the light extraction efficiency can reach approximately 4 times at a relatively longer wavelength.     

分离扇回旋加速器的等时场在线优化

针对兰州重离子加速器冷却储存环（HIRFL-CSR）的分离扇回旋加速器（SSC）的等时场优化问题,依托HIRFL-CSR的主数据库系统Oracle,设计了系统控制界面,该界面不仅能够读取和给定电源电流值,而且能够实时更新束流相位信息。根据束流相位的实时数据,利用Kb-Kr方法以及Lagrange插值算法建立的等时场,实现了对SSC束流等时场的在线优化。优化后的等时场可以有效控制束流相位的漂移,提高束流品质。     

碱金属原子团簇的电子能谱与吸收光谱

苟清泉在前文中［１］，从理论上阐明金属原子团簇的公有化电子能谱具有分裂能级的特点，因而具有吸光的特性，并计算了Ｃｕ与Ａｌ的金属原子团簇的吸收光谱。现进一步用此理论计算碱金属团簇的电子能谱与吸收光谱。     

Crossing in the magnetic force-gap hysteresis curve of magnetic levitation systems with a high-Tc superconductor

For the magnetic levitation system consisting of a high-T_c superconductor and permanent magnet, the relation curve of magnetic force with gap between these two components is known as a hysteresis loop, that is, the approaching and departing portions envelop a complete one, and generally these two portions do not cross each other. However, in some special cases this crossing arises, and makes the complete loop broken. In this paper, by the numerical simulation of the magnetic force-gap curve in large numbers of physical and geometrical parameters, two typical crossings were found. To investigate the crossing and explore its physical causes, for one of the crossings, the current density in the superconductor was further calculated and its magnitude and vector distribution at the gaps nearby where the crossing arises were obtained. Based on these calculation results and an adequate discussion, the conclusion was induced that the crossing in the magnetic force-gap hysteresis curve results from applied magnetic field’s incomplete and insufficient penetrating in superconductor.     

Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology

This paper studies the total ionizing dose radiation effects on MOS (metal-oxide-semiconductor) transistors with normal and enclosed gate layout in a standard commercial CMOS (compensate MOS) bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after $\gamma $-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS (n-type channel MOS) transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS (p-type channel MOS) transistors and enclosed gate PMOS transistors.     

Tribological properties of diamond-like carbon films deposited by pulsed laser arc deposition

A novel method, pulsed laser arc deposition combining the advantages of pulsed laser deposition and cathode vacuum arc techniques, was used to deposit the diamond-like carbon (DLC) nanofilms with different thicknesses. Spectroscopic ellipsometer, Auger electron spectroscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, atomic force microscopy, scanning electron microscopy and multi-functional friction and wear tester were employed to investigate the physical and tribological properties of the deposited films. The results show that the deposited films are amorphous and the sp$^{2}$, sp$^{3}$ and C--O bonds at the top surface of the films are identified. The Raman peak intensity and surface roughness increase with increasing film thickness. Friction coefficients are about 0.1, 0.15, 0.18, when the film thicknesses are in the range of 17--21~nm, 30--57~nm, 67--123~nm, respectively. This is attributed to the united effects of substrate and surface roughness. The wear mechanism of DLC films is mainly abrasive wear when film thickness is in the range of 17--41~nm, while it transforms to abrasive and adhesive wear, when the film thickness lies between 72 and 123~nm.