直接扣除法测量半导体光放大器频率响应

在光电子器件散射参量定义的基础上建立了基于直接扣除法的半导体光放大器频率响应测量系统,测量中通过扣除激光器和探测器系统的频率响应,得到放大器固有的频率响应。对InGaAsP体材料行波腔半导体光放大器样品进行了测量,得到了放大器在不同注入光功率和不同偏置电流下的频率响应曲线。这些曲线很好地反应了半导体光放大器的增益饱和和噪声特性,进一步分析发现半导体光放大器对低频调制信号的放大能力弱于对高频信号的放大能力,分析认为其原因在于半导体光放大器的载流子寿命有限导致低频信号长时间消耗载流子时,载流子数量无法及时恢复,从而使得增益降低。     

原位氧化Zn3N2制备P型ZnO薄膜的性能研究

采用射频反应溅射法在玻璃衬底上制备Zn3N2薄膜,然后向真空室中通入纯氧气进行热氧化制备ZnO薄膜.利用X射线衍射、扫描电子显微镜、霍尔效应测量、透射光谱和光致发光光谱等表征技术,研究了氧化温度和氧化时间对ZnO薄膜的结晶质量、电学性质和光学性能的影响.研究结果显示,450℃下氧化2h后的样品中除含有ZnO外,还有Zn3N2成分,500℃下氧化2h可以制备出电阻率为0.7Ωcm,空穴载流子浓度为1017cm-3,空穴迁移率为0.9cm2/Vs的具有c轴择优取向的p型ZnO薄膜.此时的ZnO薄膜具有良好的光学特性,紫外可见光范围内透过率为85%,处于紫外区域的激子复合产生的发光峰很强,且半高宽较窄,而处于可见光部分来自于深能级发射的绿色发光峰很弱.这种工艺制备的ZnO薄膜质量较好,有利于实现在短波长光电器件方面的应用.     

Characteristics of cobalt-based alloy coating on tool steel prepared by powder feeding laser cladding

Co-based alloy coating was deposited on tool steel by powder feeding laser cladding. Sections of such coatings were examined to reveal their microstructures and phases using scanning electron microscope (SEM) and X-ray diffractometer (XRD). The results showed that the prime phase (γ-Co dendrite) and other phases, including Cr₂₃C₆, Co₇W₆, and CrNi existed in the coatings. Some different solidification morphologies, such as planar (at the interface), cellular and dendrite formed, varying from the interface to the surface. Fine microstructures of γ-Co dendrite and lamellar eutectic in dendritical regions strengthened the coatings. Besides, the effects of aged treatment on the microstructure and microhardness of the surface coating were studied. Aged treatment led to the precipitations of some carbide particles (Cr₇C₃ and Co₃C) and boride particles (Co₄B) from the cladded coating, causing an increase in microhardness in the laser-cladded coating.     

Solitons in relativistic laser-plasma interactions

Single or/and multipeak solitons in plasma under relativistic electromagnetic field are reviewed. The incident electromagnetic field is allowed to have a zero or/and nonzero initial constant amplitude. Some interesting numerical results are obtained that include a high-number multipeak laser pulse and single or/and low-number multipeak plasma wake structures. It is also shown that there exists a combination of soliton and oscillation waves for plasma wake field. Also, the electron density exhibits multi-caviton structure or the combination of caviton and oscillation. A complete eigenvalue spectrum of parameters is given wherein some higher peak numbers of multipeak electromagnetic solitons in the plasma are included. Moreover, some interesting scaling laws are presented for field energy via numerical approaches. Some implications of results are discussed.      

K2里德堡态新分类

根据里德堡轨道的nl? 特性，对理论计算和实验观察到的钾分子电子态进行了分类．这些态被划分为实贯穿和实非贯穿里德堡态．这种分类更能从本质上解释和预测实验结果．比较了这种分类法对K2的应用和对Na2、Li2的应用．     

Influence of boron on the giant magnetocaloric effect of La(Fe0.9Si0.1)13

The influences of boron addition on the phase formation, Curie temperature and magnetic entropy change of the NaZn₁₃-type La(Fe_0.9Si_0.1)₁₃ compound have been investigated. Eight boron containing La(Fe_0.9Si_0.1)₁₃B_x samples were prepared with x=0, 0.03, 0.06, 0.1, 0.2, 0.3, 0.5 and 0.6, respectively. Experimental results show that a small amount of B addition in La(Fe_0.9Si_0.1)₁₃ forms the solid solution NaZn₁₃-type structure phase by substituting B for Si or doping B into interstitial position of the lattice, preserves its giant magnetocaloric effects due to their first-order structural/magnetic transition, as well as increase its Curie temperature T_c slightly. The maximum magnetic entropy changes in the magnetic field change of 0–1.6 T are around 20 J kg^–1 K^–1 for the samples with Boron addition less than 0.3, while improving the Curie temperatures by 2 K.     

Kink and conductance of an organic molecular wire

The effect of a kink on the conductance of a nanoscale polymer molecular wire is theoretically investigated on the basis of the Su–Schrieffer–Heeger (SSH) model combined with the Green's function formalism. It is found that, due to the appearance of kink, the molecular conductance decreases rapidly with the molecular length and reaches near zero when the molecular length is over a critical value. The reason is attributed to the localized effect of kink on the electronic state at the Fermi energy. The effect of electron-lattice coupling strength on the conductance is also discussed.     

Surface luminescence in ZnO nanoparticles

Spectral and time-resolved photoluminescence (TRPL) measurements were performed on ZnO nanoparticles of different sizes (17-300 nm). Under a low photon energy excitation of 2.33 eV, the time-integrated PL spectra (TIPL) clearly exhibit broad emission in the range of 1.2-2.3 eV. Upon increase of the particle size, a red-shift in the PL peak position was observed. Gaussian analysis indicates that this red-shift corresponds to the increased relative magnitude of the Gaussian combination in the low energy region. In addition, TRPL demonstrates a clear relationship between the particle diameters and the PL decay times. The shortening of the PL lifetime could be explained by a surface states model.     

Effects of sintering temperature and atmosphere on magnetism in Mn-doped TiO2 bulk samples

Magnetic properties have been investigated on Mn doped TiO₂(Ti_0.98Mn_0.02O₂) bulk samples prepared by solid state reaction, which were sintered at different temperature ranging from 450 ^°C to 900 ^°C in air and argon atmosphere, respectively. The results show that the magnetic properties were strongly dependent on the sintering temperature and atmosphere. For samples sintered in air, the magnetization initially increase with the increase of sintering temperature up to 600 ^°C and thereafter it decrease. While the magnetization of samples sintered in argon atmosphere decreases monotonically with the increase of sintering temperature. Furthermore, for samples sintered at 600 ^°C in air, the magnetic susceptibility exhibits a dominant Curie-Weiss behaviour and no magnetic transition is observed over the temperature range from 10 to 300 K. In contrast, for samples sintered in argon atmosphere, besides the magnetic transition near 45 K perhaps caused by Mn₃O₄, another magnetic transition appears near room temperature.     

Photoresponse of the In0.3Ga0.7N metal-insulator-semiconductor photodetectors

In0.3Ga0.7N metal-insulator-semiconductor （MIS） and metal-semiconductor （MS） surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The photoresponse and reverse current-voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.