不同应用条件下最佳绝缘子构型

绝缘子的沿面闪络制约着脉冲功率系统向高电压、大电流方向发展,总结了几种实际应用条件下的最佳绝缘子构型,并对不同角度下绝缘子表面的带电情况进行了分析。结果表明,表面电荷对不同绝缘子构型的性能起着至关重要的作用,需要根据不同的应用条件来开展实验研究以确定最佳的绝缘子构型。     

2D parameter optimization of Ne-like Cr x-ray laser on slab

A method of studying a non-equilibrium x-ray laser plasma is developed by extending the existing one-dimensional similarity equations to the case of two-dimensional plasma study in the directions perpendicular to the slab and along a focal line. With this method the characteristics of pre-plasma are optimized for transient neon-like Cr x-ray laser. It is found that when the duration and the intensity of 1.053μm pre-pulse are 1.2ns and 6.5 TW/cm² respectively with a delay time of 1.5ns, the temperature and the temperature discrepancy each approach a proper state, which will provide a uniform distribution of properly ionized neon-like Cr ions before the arrival of pumping pulse.     

Improving histogram-based image contrast enhancement using gray-level information histogram with application to X-ray images

Many applications of histogram-based techniques for the purposes of image enhancement are well known. However, these techniques often fail to produce satisfactory results for a broad variety of low-contrast images (e.g., X-ray images). In this paper, we propose a new form of histogram for image contrast enhancement. The input image is first divided into several equal-sized regions according to the intensities of gradients, their corresponding statistical values of gray levels are then modified respectively, and finally the processed histogram for the whole image is obtained by the summation of all the weighted values of regions. The fundamental characteristic of this new form of histogram is that the amplitudes of its components can objectively reflect the contribution of the gray levels to the representation of image information. Accordingly, this new histogram is called gray-level information histogram. The performance of many histogram-based enhancement techniques might be improved dramatically using the proposed histogram. Testing on the X-ray images validates the effectiveness of the new histogram.     

基于多种群混沌遗传神经网络的模拟电路故障诊断

针对标准遗传算法优化BP神经网络收敛慢,易陷入局部最优的问题,提出了改进的多种群协同进化遗传算法,该算法改变了以往的随机初始化方法,采用了附加混沌扰动的tent映射初始化均匀分布的种群,提高了初始解的质量;每个种群采用自适应交叉率和变异率,引入移民算子实现种群间的横向联系;算法通过多种群的协同进化和种群间的个体移植提高了算法的搜索均匀性和效率;仿真实验表明该算法误差小,收敛速度快,诊断正确率高,较好地解决了模拟电路的软故障诊断问题。     

Ionic liquid-assisted hydrothermal synthesis of dendrite-like NaY(MoO4)2:Tb phosphor

Micro-sized NaY(MoO₄)₂:Tb³⁺ phosphors with dendritic morphology was synthesized by a ionic liquid-assisted hydrothermal process. X-ray diffraction (XRD) indicated that the as-prepared product is pure tetragonal phase of NaY(MoO₄)₂. Field emission scanning electron microscopy (FE-SEM) images showed that the as-prepared NaY(MoO₄)₂:Tb³⁺ phosphors have dendritic morphology. The photoluminescent (PL) spectra displayed that the as-prepared NaY(MoO₄)₂:Tb³⁺ phosphors show a stronger green emission with main emission wavelength 545 nm corresponding to the ⁵D₄→⁷F₅ transition of Tb³⁺ ion, and the optimal Tb³⁺ doping concentration for obtaining maximum emission intensity was confirmed to be 10 mol%. Based on Van Uitert's and Dexter's models the electric dipole–dipole (D–D) interaction was confirmed to be responsible for the concentration quenching of ⁵D₄ fluorescence of Tb³⁺ in the NaY(MoO₄)₂:Tb³⁺ phosphors. The intrinsic radiative transition lifetime of ⁵D₄ level is found to be 0.703 ms.     

Preparation of Nd-doped BiFeO3 films and their electrical properties

The Nd-doped BiFeO₃ thin films were prepared on SnO₂(FTO) substrates spin-coated by the sol–gel method using Nd(NO₃)₃·6H₂O, Fe(NO₃)₃·9H₂O and Bi(NO₃)₃·5H₂O as raw materials. The microstructure and electric properties of the BiFeO₃ thin films were characterized and tested. The results indicate that the diffraction peak of the Nd-doped BiFeO₃ films is shifted towards right as the doping amounts are increased. The structure is transformed from the rhombohedral to pseudotetragonal phase. The crystal grain is changed from an elliptical to irregular polyhedron. Structure transition occurring in the Bi_0.85Nd_0.15FeO₃ films gives rise to the largest Pr of 64 μC/cm². The leakage conductance of the Nd doped thin films is reduced. The dielectric constant and dielectric loss of Bi_0.85Nd_0.15FeO₃ thin film at 10 kHz are 190 and 0.017 respectively.     

Low-temperature electrolytic coloration and spectral property of ammonium alum crystals

Ammonium alum crystals are colored electrolytically using a pointed cathode and a flat anode at low temperatures and under various voltages. SO₃^?, SO₂^? and O₃^? hole-trapped centers are produced in colored ammonium alum crystals. Characteristic absorption bands of SO₃^?, SO₂^? and O₃^? hole-trapped centers are observed in absorption spectra of colored ammonium alum crystals. Production and conversion of hole-trapped centers are explained. Current–time curves for electrolytic coloration of ammonium alum crystal and their relationship with electrolytic coloration process are given.     

结构与参量不确定的网络与网络之间的混沌同步

进行了结构与参量不确定的网络与网络之间的混沌同步研究．通过设计适当的控制输入,不但实现了两个复杂网络之间的混沌同步,而且网络节点状态方程中的未知参量和网络内部节点之间的耦合强度也被同时确定．通过采用具有调制损耗的CO2激光器的状态方程进行仿真实验,发现网络与网络之间的同步性能非常稳定．     

多量子位Heisenberg XX链中的杂质纠缠

通过分析系统的杂质位与其余部分间的纠缠N_1-A以及单个正常位与其余部分间的纠缠N_L-A研究了匀强磁场作用下含杂质Heisenberg XX链的纠缠特性.研究表明三量子位时纠缠存在的临界温度依赖于杂质参数J₁和匀强磁场B.研究发现,当量子位L为奇数时,纠缠N_1-A随量子位的增加而增大,而L为偶数时则相反,并且量子位L为偶数时的纠缠大于量子位L为奇数时的纠缠;对N_L-A, 量子位L为奇数时,纠缠随杂质参数J₁的变化与L=3类似,而L为偶数时纠缠随杂质参数|J₁|的增加而增加.