B（X）上保点谱的可加映射和初等算子

记Ｘ为复数域上无限维Ｂａｎａｃｈ空间，Ｈ为无限维复可分Ｈｉｌｅｒｔ空间。本文给出Ｂ（Ｘ）上保持点谱的满射可加射具有的形式，以及Ｂ（Ｈ）上某些初等算子保点谱的充要条件。     

优化路问题的代数方法—论动态规划（Ⅱ）

本文用同一思路求解多阶段有向图中三种优化路问题:最优路、N阶最优路及多指标Pareto优化路问题,它们都服从嘉量原理,都用同一个代数公式表达它们的嘉量,并可在同一种表格中进行计算,只是所在半域不同,以本文的方法讨论动态规划中一些离散决定型典型应用问题,其提法、建模思路以及求解过程都有可观的扩大与改善。     

Ge_x Si_(1-x)/Si超晶格中纵声学声子的喇曼散射强度研究

本文用光弹理论,在全面考虑了超晶格中两种材料的声速,质量密度和光弹常数存在差别的基础上,计算了Ge_xSi_(1-x)/Si超晶格中折迭纵声学声子的喇曼散射强度,在高达50cm~(-1)的频率范围内,理论值和实验符合得很好。     

Irradiation-induced reduction and luminescence properties of Sm doped in BaBPO5

Usually, Sm²⁺ ions could be reduced by heating the materials in reducing atmospheres. Exposure to ionizing radiations is also known to cause Sm³⁺→Sm²⁺ conversion. In this work, BaBPO₅ doped with the samarium ion was prepared by high temperature solid-state reaction. Sm²⁺ ions were obtained by two different reduction methods, i.e., heating in H₂ reduced atmosphere and X-ray irradiation. The measurements of X-ray diffraction (XRD), and scanning electron microscope (SEM) were investigated. It is found that the conversion of Sm³⁺→Sm²⁺ is very efficient in BaBPO₅ hosts after X-ray irradiation. Sm²⁺ ions under these two reduction methods exhibit different characteristics that were studied by measurements of luminescence and decay. The results showed that the luminescence properties of Sm²⁺ ions in BaBPO₅ were highly dependent on the sample preparation conditions.     

Synthesis of grafted poly(p‐phenyleneethynylene) with energy donor–acceptor architecture via atom transfer radical polymerization: Towards nonaggregating and hole‐facilitating light‐emitting material

In this contribution, we demonstrate a new effective methodology for constructing highly efficient and durable poly(p‐phenyleneethynylene) (PPE) containing emissive material with nonaggregating and hole‐facilitating properties through the introduction of hole‐transporting blocks into the PPE system as the grafting coils as well as building the energy donor–acceptor architecture between the grafting coils and the PPE backbone. Poly(2‐(carbazol‐9‐yl)ethyl methacrylate) (PCzEMA), herein, is chosen as the hole‐transporting blocks, and incorporated into the PPE system as the grafting coils via atom transfer radical polymerization. The chemical structure of the resultant copolymer, PPE‐g‐PCzEMA, was characterized by NMR and gel permeation chromatography, showing that the desirable copolymer was obtained with the narrow polydispersity. The increased thermal stability of PPE‐g‐PCzEMA was confirmed by thermogravimetric analysis and differential scanning calorimetry along with its macroinitiator. The optoelectronic properties of this copolymer were studied in detail by ultraviolet‐visible absorption, photoluminescence emission and excitation spectra, and cyclic voltammogram (CV). The results indicate that PPE‐g‐PCzEMA exhibits the solid‐state luminescent property dominated by individual lumophores, and also the energy transfer process from the PCzEMA blocks to the PPE backbone with a relatively higher energy transfer efficiency in the solid‐state compared to that of the solution state. Additionally, the hole‐injection property is greatly facilitated due to the presence of PCzEMA, as confirmed by CV profiles. All these data indicate that PPE‐g‐PCzEMA is a good candidate for use in optoelectronic devices. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 3776–3787, 2007     

一种新型有机电致微腔结构的双模发射

采用结构Glass／DBR／ITO／NPB／NPB：Alq／Alq／Al制作了有机微腔电致发光器件。将空穴传输材料与发光材料以一定比例混合作为发光层，为了便于对比，在不改变有机层的膜厚的情况下同时制作了传统的异质结微腔器件，发现两种器件的发光光谱有很大不同，器件的复合效率与传统的异质结器件相比也得到了很大提高，这是因为将两种有机材料混合能消除界面势垒，提高器件的复合效率，从而提高了器件的发光性能，实现了微腔双模发射，且两个模式的半峰全宽分别为8nm和12nm。通过进一步优化器件结构可以实现微腔白光发射。     

二氯和邻菲罗啉二酮的镍(Ⅱ)、铜(Ⅱ)、锌(Ⅱ)配合物的合成与表征

以ＭＣｌ２和配体Ｌ（Ｌ＝１，１０－菲罗啉－５，６－二酮）为原料，合成了标题配合物ＭＬＣｌ２，Ｍ＝ＮｉⅡ，ＣｕⅡ，ＺｎⅡ，并经元素分析、热谱、ＩＲ和摩尔电导表征．三者均为四配位的电中性配合物，热稳定性高于５００Ｋ，易溶于ＤＭＦ、ＤＭＳＯ和吡啶，可溶于乙腈和水．它们在ＤＭＦ中于３５０ｎｍ和３１５ｎｍ附近显示出强的Ｍ－Ｌ荷移跃迁     

A hybrid-Trefftz element containing an elliptic hole

Much work on special elements that simplify geometrical modelling of structures containing holes, cracks and/ or inclusions has been reported extensively in the literature. This paper presents a hybrid-Trefftz element containing elliptic hole formulated using Hellinger–Reissner principle by employing trial functions based on the mapping technique and the Cauchy integral method. The element presented in this paper could be regarded as an improved formulation over Piltner [Special finite elements with holes and internal cracks, Int. J. Numer. Methods Eng. 21 (1985) 1471–1485] element because the chosen trail functions in this paper have provided relatively more stable solutions. The use of the element with other ordinary displacement-based finite elements has also yielded very accurate solutions even when very coarse meshes relative to the size of the elliptic hole have been used.     

Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.