脉冲激光偏振方向对氮分子高次谐波的影响——基于含时密度泛函理论的模拟

采用含时密度泛函方法,结合赝势模型和电子交换相关作用的广义梯度近似,模拟了氮分子在超强飞秒激光脉冲作用下的高次谐波产生现象,并研究了激光脉冲偏振方向对氮分子高次谐波的影响.结果表明氮分子的高次谐波谱具有典型原子谐波谱的特征;谐波谱强度随着θ(激光偏振方向与分子轴向夹角)的增大而减小.这与J.Itatanl在Nature上报道的实验结果基本一致.     

A Rapid Solid-phase Synthesis to Soluble Oligothiophene Molecular Wires

A novel method for the preparation of oligothiophene molecular wires is described via a bi-directional solid-phase synthesis. Using an alternating sequence of bromination and Stille coupling reactions, oligomers were obtained up to the heptamer in excellent yield and purity.     

Effects of Nb2O5 on thermal stability and optical properties of Er3+-doped tellurite glasses

Er³⁺-doped tellurite glasses with molar compositions of xNb₂O₅-(14.7-x)Na₂O--10ZnO--5K₂O--10GeO₂-- 60TeO₂--0.3Er₂O₃ (x=0, 3, 5, 7 and 9) have been investigated for developing 1.5~μm fibre and planar amplifiers. The effects of Nb₂O₅ on the thermal stability and optical properties of Er³⁺-doped tellurite glasses have been discussed. It is noted that the incorporation of Nb₂O₅ (x=5) increases the thermal stability of tellurite glasses significantly. Er³⁺-doped niobium tellurite glasses exhibit a large stimulated emission cross-section (7.2\times 10^-21- 10.7×10^-21~cm² and the gain bandwidth, FWHM×\sigma_e^{\rm peak} (274\times 10^-28 - 480×10^-28~cm³), which are significantly higher than that of silicate and phosphate glasses. In addition, the intensity of upconversion luminescence of the Er³⁺-doped niobium tellurite glasses decreases rapidly with increasing Nb₂O₅ content. As a result, Er³⁺-doped niobium tellurite glasses might be a potential candidate for developing laser or optical amplifier devices.     

Study on anti-emission materials for non-emitting grid applications in microwave power tubes

Hafnium and platinum were deposited onto molybdenum grids by ion-beam assisted deposition method. Electron-emission characteristics from molybdenum grids with Hf and Pt films, which were contaminated by active electron-emission substances (Ba, BaO) of the cathode, were measured using analogous diode method. The surfaces of grids were analyzed by X-ray diffraction. The results revealed that the reaction between BaO and Hf formed BaHfO₃ compound, which greatly reduced the accumulation of BaO on the surface and accordingly decreased grid emission. In contrast, Ba were formed by the decomposition of BaO on the surface of Pt film under high temperature and re-evaporated from its surface, which reduced the active electron-emission substances on the surface of the grid and effectively restrained grid emission. Their mechanisms for grid-emission suppression are discussed and a good method to develop new grid-coating materials is suggested.     

圆外区域求解Helmholtz方程

1引言许多科学和工程计算问题都可以归结为无界区域上的偏微分方程边值问题．而求解椭圆方程边值问题的常用技术是有限元方法,可是对于无界区域,在用有限元方法求解时,往往遇到困难．最简单的办法显然是直接略去区域的无界部分求解,但这样做或者导致过低的计算精度,或者要付出很高的计算代价．边界归化,即将求解偏微分方程边值问题转化为边界积分方程,是求解某些无界区域问题的强有力的手段．自70年代以来,有限元和     

偏硅酸钙中Pr3+的4f5d态的光谱特性及Pr3+→Gd3+的能量传递

合成了高效发射UV光的CaSiO3:Pr^3 新型荧光体，研究了室温下Pr^3 的4f5d态的发射和激发光谱，Pr^3 的4f5d态的最低子能级向4f^2组态的^3H4，^3H6和^1G4能级跃迁产生UV发射，并不伴随有4f-4f能级跃迁的可见光发射。Pr^3 的浓度猝灭是由于辐射和无辐射能量传递造成的，同时，在CaSiO3中，存在Pr^3 →Cd^3 的能量传递，探讨了其能量传递特性。     

Multiple positive solutions for one-dimensional p-Laplacian boundary value problems

By means of the Leggett-Williams fixed-point theorem, criteria are developed for the existence of at least three positive solutions to the one-dimensional p-Laplacian boundary value problem, ((y′))′ + g(t)f(t,y) = 0, y(0) - B₀(y′(0)) = 0, y(1) + B₁(y′(1)) = 0, where (v) |v|^p−2v, p > 1.     

具有高机械强度的掺Er~(3 )∶TeO_2-Nb_2O_5玻璃的光谱性质研究

熔制了掺铒碲铌玻璃样品(100-X)TeO2-XNb2O5(X=5,10,15,20mol%),测试了其密度、折射率、转变温度、析晶温度、维氏机械强度、吸收光谱、荧光光谱、荧光寿命等参量。利用Judd-Ofelt和McCumber理论分别计算了铒离子强度参量Ωt(t=2,4,6)和受激发射截面σemi的大小,研究了掺铒碲铌玻璃样品光谱参量对Nb2O5成分的依赖性,并与典型的碲锌钠玻璃(75TeO2-20ZnO-5Na2O)在热学、机械强度、光谱性质和放大品行四个方面进行了比较.     

因式分解广义逆

在因式分解范畴中定义态射的因式分解广义逆,给出了它的显形式,讨论了其唯一性.应用于范畴C^m×n中,态射A:m→n的满秩分解(A₁,r,A₂)可刻划A的具有指定值域和零空间的(1,2)逆,并给出了具有指定值域和零空间的(1,2)逆表成因式分解广义逆的充要条件.     

Global Existence and Exponential Stability of Smooth Solutions to a Full Hydrodynamic Model to Semiconductors

 We study a full hydrodynamic semiconductor model in multi-space dimension. The global existence of smooth solutions is established and the exponential stability of the solutions as is investigated. Received November 14, 2000; in revised form March 25, 2002 Published online August 5, 2002