PVP掺杂-ZrO2溶胶-凝胶工艺制备多层激光高反射膜的研究

以丙醇锆(ZrPr)为锆源,二乙醇胺(DEA)为络合剂,原位引入聚乙烯吡咯烷酮(PVP),在乙醇体系中成功地合成了PVP掺杂-ZrO2溶胶.采用旋涂法在K9玻璃基片上制备了PVP-ZrO2单层杂化薄膜.用不同掺杂量的PVP-ZrO2高折射率膜层与相同的SiO2低折射率膜层交替沉积四分之一波堆高反射膜.借助小角X射线散射研究胶体微结构,用红外光谱、原子力显微镜、紫外/可见/近红外透射光谱、椭圆偏振仪以及1064nm的强激光辐照实验对薄膜的结构、光学和抗激光损伤性能进行表征.研究发现,体系组成的适当配置可以在溶胶稳定的前提下实现ZrPr的充分水解,赋予薄膜良好的结构、光学和抗激光损伤性能.杂化体系中,DEA与ZrPr之间强的配合作用大大降低了ZrO2颗粒表面羟基的活性,使得PVP大分子只是以微弱的氢键与颗粒的表面羟基作用而均匀分散于ZrO2颗粒的周围,对颗粒的形成和生长无显著影响.因而在实验研究范围内,随PVP含量的增大,PVP-ZrO2杂化膜层的折射率和激光损伤阈值均无显著变化.但是,薄膜中均匀分布的PVP柔性链可以有效促进膜层应力松弛,显著削弱不同膜层之间的应力不匹配程度、大大方便多层光学薄膜的制备.当高折射率膜层中PVP的质量分数达到15%-20%时,膜层之间良好的应力匹配使得多层高反射膜的沉积周期数可达到10以上.沉积1O个周期的多层反射膜,在中心波长1064nm处透射率约为1.6%-2.1%,接近全反射特征,其激光损伤阈值为16.4-18.2J/cm2(脉冲宽度为1ns).     

Simultaneous quantitative evaluation of in-plane and out-of-plane deformation by use of a carrier method of large image-shearing shearography

A carrier method for separating out-of-plane displacement from in-plane components based on large imageshearing shearography is presented. A reference surface is fixed on the side of a test object. They are illuminated by two expanded symmetric illuminations respectively. The carrier is introduced by rotating the reference surface to modulate the displacement of an object. By using Fourier transform to demodulate the modulated fringe pattern, two phase maps, which include out-of-plane and in-plane displacements, can be obtained. Then the out-of-plane displacement can be easily separated from in-plane displacement by subtraction and addition of the two unwrapped phase distributions. The principle of the method is presented and proved by a typical three-point-bending experiment. Experimental results show that the method enjoys high visibility of carrier fringes. The system does not need a special beam as a reference light and has simple optical setup.     

低电荷态离子原子碰撞过程中的转移电离机理的研究

介绍了使用位置灵敏技术和飞行时间方法研究中低能低电荷态离子-原子碰撞过程中转移电离与单电子俘获过程.对于确定的入射离子电荷态,通过理论分析及与实验数据对比给出了转移电离与单电子俘获截面比R_TS随着入射离子速度V_P的变化规律和转移电离过程中电离的电子主要来自靶原子的最外亚壳层. 关键词： 转移电离 逃离半径 电离半径 俘获半径     

串扰对密集波分复用网络扩展性的影响

串扰是限制密集波分复用网络扩展的一个重要因素。理论分析了三种典型光交叉连接中的串扰。结果表明基于扩展贝奈斯光交换结构的光交叉连接可以完全消除低于二阶的各类串扰,同时,若将可调谐的窄带滤波器引入到结构2中可以消除低于三阶的各类串扰。用数值模拟的方法分析了带内串扰对强度调制直接检测网络扩展性的影响。结果表明,基于扩展贝奈斯光交换结构的光交叉连接对器件串扰系数的要求得到了很大的放宽,用它来组建的密集波分复用网络具有很好的扩展性。串扰多是由构成光交换节点中各种器件的非理想性造成的,通过分析得出器件中产生的串扰可以从系统中得到很好的解决。     

水杨酸镧的流变相合成、表征及掺杂Tb3+的水杨酸镧的发光性质

用流变相反应法合成了水杨酸镧和掺杂Tb3 的水杨酸镧 ,通过元素分析 ,TG ,DTA ,X射线粉末衍射及红外光谱分析确定了水杨酸镧的组成、晶体结构和羧酸根与金属离子的配位方式 ,测定了掺杂Tb3 的水杨酸镧的激发和发射光谱 ,并对其发光特性进行了讨论。X射线粉末衍射表明该化合物为具有层状结构的单斜晶系 ,晶胞参数为 :a =2 1 6 0 1 0 ,b =1 3 80 1 5 ,c =3 81 0 3 ,β=97 1 1° ,V =1 1 2 7 2 3 ,Z =2 ,ρcal =1 6 2 1g·cm-3 ,ρexp =1 6 5 3g·cm-3 。掺杂Tb3 的水杨酸镧固体样品在紫外光激发下可观测到很强的三价铽离子的绿色发光 ,其中5D4→ 7F5的跃迁发射最强。     

小试金富集ICP-AES法同时测定试样中的铂、钯、金

文章报道了用小试金富集ICP AES法同时测定试样中的铂、钯和金 ,将 1 0～ 2 0g试样中的铂、钯、金富集在毫克量的银合粒中 ,制成溶液后用ICP AES法同时测定铂、钯和金。该方法的检出限 (μg·mL-1 )Pt,Pd ,Au分别为 0 0 1 ,0 0 0 5 ,0 0 1 ,相对标准偏差 (RSD ,n =1 0 )分别为 0 1 % ,0 1 2 % ,0 0 9% ,标准回收率均在 97%以上。生产实践表明 ,本方法是一种快速、简便、准确的分析方法 ,已被我们应用于测定样品中的铂 ,钯和金     

2-噻吩乙醛酸-邻菲罗啉-铕配合物的合成、结构表征及荧光性能的研究

合成了铕与 2 噻吩乙醛酸 (HL)和邻菲罗啉 (phen)的配合物 ,用元素分析、电导率、红外光谱和核磁共振谱测定了配合物的分子式为 [EuL2 phen·(H2 O) 3 ]NO3 ;配合物中的Eu(Ⅲ )离子与 2 噻吩乙醛酸和水分子中的O原子以及邻菲罗啉中的N原子配位。在室温下测定了配合物的激发和发射光谱 ,配合物中Eu(Ⅲ )离子的5D0 7F1和5D0 7F2 跃迁分别位于 5 92和 6 18nm。该固体配合物于室温下被紫外光激发可以发出强的特征红色荧光。IR光谱中 ,2 噻吩乙醛酸的特征吸收峰νCO (1719cm-1) ,νC—O(12 32cm-1) ,δO—H(90 9cm-1)在形成配合物后消失。在配合物中出现—COO-的反对称νas(16 4 2cm-1)和对称νs(14 0 8cm-1)伸缩振动吸收峰。在1HNMR谱图中 ,2 噻吩乙醛酸环上的 3个氢原子的化学位移形成配合物后移向高场 ,邻菲罗啉环上 4种不同环境的质子峰的化学位移形成配合物后向低场移动。从TG曲线可以看出 ,此配合物在常温至 2 5 0℃以下是稳定的。     

嵌入耦合量子点的介观Aharonov-Bohm环内的持续电流

使用双杂质的Anderson模型的哈密顿量，从理论上研究了一个嵌入耦合量子点的介观Aharonov-Bohm环系统处在Kondo区时的基态性质, 并用slave-boson平均场方法求解了哈密顿量. 结果表明, 在这个系统中, 宇称效应和复杂的电流 相位关系的出现反映了两个量子点可以相干耦合. 关键词： 持续电流 耦合量子点 宇称效应 Kondo效应     

Investigation on hexamethyldisilazane vapor treatment of plasma-damaged nanoporous organosilicate films

Hexamethyldisilazane (HMDS) vapor treatment of plasma-damaged nanoporous organosilicate thin films has been studied as a function of treatment temperature in this work. Although, the HMDS vapor treatment facilitated incorporation of methyl (CH₃) groups subsequent to the removal of free hydroxyl (OH) groups in the damaged films at treatment temperature as low as 55 °C, the bonded OH groups were not removed. More significantly, detailed analysis of the results reveals that HMDS vapor modified only the surface of the plasma-damaged samples and not the entire film as expected. This is attributed to the formation of a thin solid layer on the surface, which effectively prevents penetration of HMDS vapors into the bulk. The Fourier transform-infrared (FT-IR) absorption and dielectric constant measurements confirm that the vapor treatment assists only partial curing of the plasma-damaged films. Alternative processes of curing the films with HMDS dissolved in supercritical carbon dioxide (SCCO₂) as a medium of reaction in static and pulsed modes were also attempted and the results are presented in this paper.     

Molecular dynamics simulation of processing using AFM pin tool

A three-dimensional molecular dynamics (MD) model is utilized to investigate the effect of tool geometry on the deformation process of the workpiece and the nature of deformation process at the atomic-scale. Results show that different states exist between the atomic force microscope (AFM) pin tool and the workpiece surface, i.e. the non-wear state, the ploughing state, the state in which ploughing is dominant and the state in which cutting plays a key role. A relationship between the deformation process of the workpiece and the potential energy variation is presented. The potential energy variation of atoms in different deformed regions in the workpiece such as plastically deformed region, elastically deformed region and the mixed deformation region is different. The features of variations of potential energy are discussed.