大口径KDP晶体角度相位匹配离线测量精度研究

为满足惯性约束聚变(ICF)实验对激光驱动器高效三倍频能力的要求, 对离线测量晶体角度相位匹配方案进行了优化。采取的主要优化措施是：提高晶体准直技术能力;降低模拟小口径激光输出变化对测量不稳定性的影响。通过理论分析和对实际测量结果的系统分析,得到了晶体离线测量的不确定度：其中二倍频相位匹配角测量扩展不确定度为15.94 rad,三倍频相位匹配角测量扩展不确定度为27.8 rad,达到了较高的晶体离线测量精度要求。     

Bi2223带材的临界电流及交流损耗研究

测量了77K温度下不同基体材料和不同芯数带材的临界电流和交流损耗.分析了弯曲应变对它们的影响.结果表明单芯样品的不可逆应变小于0.15%,而多芯样品的不可逆应变在01%到03%之间,多芯导体的机械性能比单芯导体的好,增加芯数可以提高机械性能,金属包套材料对超导芯起到了增强的作用,它防止了超导芯中裂纹的进一步传播.自场损耗随外加应变的增加而增加,这种大幅度的增加与应变使带材的临界电流急剧减小直接相关 关键词： 高温超导体 临界电流 交流损耗     

进行子阵加权波束形成的波达方向估计

针对水声信道的多径效应以及海底散射信号信噪比低导致方位估计性能较差的问题,提出了一种基于子阵加权波束形成的UESPRIT算法(Weighted Beamspace UESPRIT Based on Subarrays,BS-BUESPRIT)。首先利用密集波束域转换矩阵估计回波信号的方位谱,进而估计同一时刻到达阵列的回波数目;之后将均匀线阵分为多个尺寸相同、相互重叠的子阵,利用加权波束形成对各子阵接收信号做指定方向的空域滤波;最后基于各子阵波束形成后的输出结果,利用UESPRIT算法实现回波方向的估计。仿真和湖试、海试试验结果表明,与UESPRIT算法相比,BS-BUESPRIT算法提高了信号波达方向估计性能,在多径和较低信噪比条件下有着更高的估计精度,应用于高分辨率测深侧扫声呐时有效地提高了声呐的测深性能。     

60 GHz Radio over Fiber Technology for Wireless Access by employing Narrow-Angle PSK Modulation

This paper investigates two key techniques used in 60 GHz Radio over Fiber (RoF) technology for wireless access, namely, the generation of 60 GHz signals and the distribution of 60 GHz local oscillator (LO). In the proposed model, a 60 GHz PSK signal is generated by a heterodyne of two subcarriers with narrow-angle PSK (NA-PSK) modulation, whose phase shift is equal to one half that of a normal PSK signal. Then we use a 60 GHz mixer to frequency mix two PSK signals in two different bands, 60 GHz and baseband. By doing this, the modulation information can be fully eliminated, resulting in a 60 GHz LO. In the wireless terminal, coherent demodulation is realized by a self-mixing of the transmitted 60 GHz PSK signal and LO. Thus no millimeter-wave (mm-wave) band oscillator is needed in the wireless terminal.     

Redox driven conductance changes for resistive memory

The relationship between bias-induced redox reactions and resistance switching is considered for memory devices containing TiO₂ or a conducting polymer in “molecular heterojunctions” consisting of thin (2–25 nm) films of covalently bonded molecules, polymers, and oxides. Raman spectroscopy was used to monitor changes in the oxidation state of polythiophene in Au/P3HT/SiO₂/Au devices, and it was possible to directly determine the formation and stability of the conducting polaron state of P3HT by applied bias pulses [P3HT = poly(3-hexyl thiophene)]. Polaron formation was strongly dependent on junction composition, particularly on the interfaces between the polymer, oxide, and electrodes. In all cases, trace water was required for polaron formation, leading to the proposal that water reduction acts as a redox counter-reaction to polymer oxidation. Polaron stability was longest for the case of a direct contact between Au and SiO₂, implying that catalytic water reduction at the Au surface generated hydroxide ions which stabilized the cationic polaron. The spectroscopic information about the dependence of polaron stability on device composition will be useful for designing and monitoring resistive switching memory based on conducting polymers, with or without TiO₂ present.     

P538萃取钒(Ⅳ)的研究

在20±0.5℃下，用P538环已烷溶液从硫氰酸盐介质中，萃取钒（Ⅳ）机理为离子交换机理，萃合物组成VO^2 :SCN^-:HA^-=1:1:1，萃取率为82.5%。     

Fano effect of a parallel-coupled triple Rashba quantum dot system

Using the nonequilibrium Keldysh Green's function technique, the Fano effect of a parallel-coupled triple Rashba quantum dot system is investigated. The conductance as a function of electron energy is numerically calculated. Compared with the case of a parallel-coupled double quantum dot system, two additional Fano resonance peaks occur in the conductance spectrum. By adjusting the structural parameters, the two Fano resonance peaks may change into the resonance peaks. In addition, the influence of Rashba spin-orbit interaction on the conductance is studied.     

Characterizing the properties of ultrasonics propagating on the surface of materials with defect by Laser-ultrasonics method

A laser ultrasonics method is used to characterize the propagation properties of surface wave traveling on the surface of materials with sub-surface defect in 2D.Linear and nonlinear propagation properties of ultrasonics caused by the defects have been detected in experiment. A theoretical model is proposed and used to study the linear and nonlinear properties of ultrasonics caused by the defect.The numerical results indicate that the nonlinear ultrasonic wave will be excited when a finite amplitude ultrasonics propagates on the surface of materials with sub-surface defect.The theoretical analysis confirms that the nonlinear wave is caused by the "clapping"of the interface of defect instead of the mode conversions of ultrasonics.     

Growth and spectral properties of Yb:Ca0.28Ba0.72Nb2O6 disordered crystal

The growth, XRD patterns, spectral properties, and fluorescence decays of Yb:Ca_0.28Ba_0.72Nb₂O₆ (Yb:CBN) with doping concentration of 1 at.% and 5 at.% were studied. The peak absorption cross-section and the emission cross-section were calculated. Larger Stark splitting of Yb:CBN offers the prospect of the quasi-four level laser operation.     

Effect of annealing on the nanoscratch behavior of multilayer Si0.8Ge0.2/Si films

In this study, we examined the nanoscratch behavior of annealed multilayered silicon-germanium (SiGe) films comprising alternating sublayers (Si) deposited using an ultrahigh-vacuum chemical vapor deposition (UHV/CVD) system. Annealing consisted of ex situ thermal treatment in a furnace system. We used a nanoscratch technique to investigate the nanotribological behavior of the SiGe films and atomic force microscopy (AFM) to observe deformation phenomena. Our AFM morphological studies of the SiGe films revealed that pile-up phenomena occurred on both sides of each scratch. The scratched surfaces of the SiGe films that had been subjected to various annealing conditions exhibited significantly different features, it is conjectured that cracking dominates in the case of SiGe films while ploughing dominates during the scratching process. We obtained higher coefficients of friction (μ) when the ramped force was set at 6000 μN, rather than 2000 μN, suggesting that annealing of SiGe films leads to higher shear resistance; annealing treatment not only produced misfit dislocations in the form of a significantly wavy sliding surface but also promoted scratching resistance.