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141.
142.
主要讨论了不含k-C-圈的n阶r-一致超图,对不同的k,分别得出了它的极大边数的一个下界,并且得出在有些情况下它的下界是最大的.另外,我们得到了Krn含k-C-圈的一个充分必要条件. 相似文献
143.
144.
Feng S.-W. Tsai C.-Y. Cheng Y.-C. Liao C.-C. Yang C.C. Lin Y.-S. Ma K.-J. Chyi J.-I. 《Optical and Quantum Electronics》2002,34(12):1213-1219
A side-bump feature in a photoluminescence (PL) spectrum of an InGaN compound was widely observed. With reasonable fitting to PL spectra with three Gaussian distributions, the temperature variations of the peak positions, integrated PL intensities, and peak widths of the main and first side peaks of three InGaN/GaN multiple quantum well samples with different nominal indium contents are shown and interpreted. The existence of the side peaks is attributed to phonon–replica transitions. The variations of the peak position separations and the decreasing trends of the first side peak widths beyond certain temperatures in those samples were explained with the requirement of phonon momentum condition for phonon–replica transitions. In the sample with 25% nominal indium content, the phonon–replica transition could become stronger than the direct transition of localized states. 相似文献
145.
A new formulation derived from thermal characters of inclusions and host films for estimating laser induced damage threshold has been deduced. This formulation is applicable for dielectric films when they are irradiated by laser beam with pulse width longer than tens picoseconds. This formulation can interpret the relationship between pulse-width and damage threshold energy density of laser pulse obtained experimentally. Using this formulation, we can analyze which kind of inclusion is the most harmful inclusion. Combining it with fractal distribution of inclusions, we have obtained an equation which describes relationship between number density of inclusions and damage probability. Using this equation, according to damage probability and corresponding laser energy density, we can evaluate the number density and distribution in size dimension of the most harmful inclusions. 相似文献
146.
利用溶胶凝胶法在SiO2Si衬底上沉积高取向的V2O5薄膜,在压强低于2Pa,温度高于400℃的条件下,对V2O5薄膜进行真空烘烤,获得了电阻率变化3个数量级以上、弛豫宽度为62℃的VO2多晶薄膜.以X射线衍射(XRD)、扫描电子显微镜(SEM)图和电阻率转换特性等实验结果为依据,详细分析了溶胶凝胶薄膜在真空烘烤时从V2O5向VO2的转化,它经历了从VnO2n+1(n=2,3,4,6)到VO2的过程.实验证明,根据选择合适的成膜热处理条件和真空烘烤条件是实现溶胶凝胶V2O5结构向VO2结构成功转换的关键
关键词:
溶胶-凝胶法 氧化钒薄膜 VO2膜转换特性 相似文献
147.
148.
X. Luo F. Y. Shi J. X. Lin 《International Journal of Infrared and Millimeter Waves》1991,12(2):141-147
Detection of COCl2, a highly toxic gas in chemical industry, using laser photoacoustic spectroscopy is presented. The spectrophone system used has a broad band LN2 cooled CW CO laser as a source of radiation, which operates from 4.8–8.4 um in the mid-infrared. Using an extracavity open longitudinal resonant cell, absorption signals to about 30 CO laser lines in the 5.45 um region could be observed. detection sensitivity has been estimated to be ppb order.This work has been supported by the NSFC 相似文献
149.
A system for display of magnetic resonance (MR) spectroscopic imaging (SI) data is described which provides for efficient review and analysis of the multidimensional spectroscopic and spatial data format of this technique. Features include the rapid display of spectra from selected image voxels, formation of spectroscopic images, spectral and image data processing operations, methods for correlating spectroscopic image data with high resolution 1H MR images, and hardcopy facilities. Examples are shown for 31P and 1H spectroscopic imaging studies obtained in human and rat brain. 相似文献
150.
1IntroductionThispaperisconcernedwithpositivesolutionOfthesemilinearheatequationswithlocalizedreactionssubjecttoeitherinitialconditions(Cauchyproblem)ortheinitialandboundary-value(DirichletorNeumanntype)conditionswherenisaboundeddomaininRe,icEO.Equations(1.1)canbethoughtofasamodeltodescribesomephysicalphenomena(heatpropagation,chemicalreaction)inwhichthenonlinearreactionsinadynndcalsystemtakesplaceonlyatasinglesite.InthesequelforconvenienceweshallsamplycalltheCauchy,initial-Direchlet,orini… 相似文献