位相物体的暗场成像

本文介绍一种便于实现的位相物体暗场成像方法，并给出了实验结果．     

半无限晶体中慢速运动的表面极化子

本文研究电子与体纵光学声子耦合弱、与表面光学声子耦合强的半无限晶体中的表面极化子的性质.采用改进了的线性组合算符法和微扰法导出了半无限晶体中的慢速运动极化子的有效哈密顿量.在计及电子在反冲效应中发射和吸收的不同波矢的声子之间的相互作用时,讨论了对有效哈密顿量,诱生势和有效质量的影响.对AgBr晶体进行了数值计算,结果表明反冲效应中发射和吸收的不同波矢的声子之间的相互作用对有效质量和诱生势的影响随耦合常数αt的增加而增加,对有效质量的影响随坐标z的增加而减小的更多,对诱生势的影响随z的增加而增加的更多.     

D-N交替法与Schwartz交替法的收敛关系分析

This paper has demonstrated that the Schwartz alternating process must converge if D-N alternating process has converged. Its technique is that the overlapping regions in Schwartz alternating process are considered as independent domains, then Schwartz alternating process could be transformed into D-N alter-nating process. Finally the convergence estimation of Schwartz alternating process could be obtained. The results show that its convergence rate is same as that of D-N alternating process.     

Fast spin state initialization in a singly charged InAs-GaAs quantum dot by optical cooling

Quantum computation requires a continuous supply of rapidly initialized qubits for quantum error correction. Here, we demonstrate fast spin state initialization with near unity efficiency in a singly charged quantum dot by optically cooling an electron spin. The electron spin is successfully cooled from 5 to 0.06 K at a magnetic field of 0.88 T applied in Voigt geometry. The spin cooling rate is of order 10(9) s-1, which is set by the spontaneous decay rate of the excited state.     

基于扫描隧道显微镜的原子电子云结构

本文简要介绍了扫描隧道显微镜的基本工作原理，展示了一些扫描样品（石墨和铜）的电子云图，在简要介绍量子力学关于原子电子云结构基本理论的基础上，通过理论上的电子云结构与扫描结果的比较，在一定程度上验证了量子力学关于原子电子云结构理论的正确性．     

铜-康铜热电偶的低温不均匀性实验研究

从冰点到液氮温度的宽低温区内,对随机选取的铜-康铜热电偶进行了重复性精度标定.测试结果表明,多次断偶重复焊接行为将产生约0.272 mV的标准差.这意味着在液氮条件下,温度测量过程的最大误差将达8.98 ℃.所以,对现场、尤其对深冷区的现场进行精确测温实验中出现的断偶故障,重新焊接后必须重新标定才能继续使用.     

Thermal and carrier transport originating from photon recycling and non-radiative recombination in laser micromachining of GaAs thin films

Coupled thermal and carrier transports (electron/hole generation, recombination, diffusion and drifting) in laser photoetching of GaAs thin film is investigated. A new volumetric heating mechanism originating from SRH (Shockley–Read–Hall) non-radiative recombination and photon recycling is proposed and modeled based on recent experimental findings. Both volumetric SRH heating and Joule heating are found to be important in the carrier transport, as well as the etching process. SRH heating and Joule heating are primarily confined within the space-charge region, which is about 20 nm from the GaAs surface. The surface temperature rises rapidly as the laser intensity exceeds 10⁵ W/m². Below a laser intensity of 10⁵ W/m², the thermal effect is negligible. The etch rate is found to be dependent on the competition between photovoltaic and photothermal effects on surface potential. At high laser intensity, the etch rate is increased by more than 100%, due to SRH and Joule heating. Received: 24 January 2002 / Accepted: 11 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +1-310/206-2302, E-mail: xiang@seas.ucla.edu     

Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime

Positron-lifetime experiments have been carried out on two undoped n-type liquid encapsulated Czochralski (LEC)-grown InP samples with different stoichiometric compositions in the temperature range 10-300 K. For temperatures below 120 K for P-rich InP and 100 K for In-rich InP, the positron average lifetime began to increase rapidly and then leveled off, which was associated with the charge state change of hydrogen indium vacancy complexes from (V_InH₄)⁺ to (V_InH₄)⁰. This phenomenon was more obvious in P-rich samples that have a higher concentration of V_InH₄. The transformation temperature of approximately 120 K suggests that the complex V_InH₄ is a donor defect and that the ionization energy is about 0.01 eV. The ionization of neutral V_InH₄ accounted for the decrease of the positron average lifetime when the sample was illuminated with a photon energy of 1.32 eV at 70 K. These results provide evidence for hydrogen complex defects in undoped LEC InP.     

Structural and upconversion fluorescence properties of Er/Yb-codoped oxychloride lead-germanium-bismuth glass

Structural and infrared-to-visible upconversion fluorescence properties of Er³⁺/Yb³⁺-codoped oxychloride lead-germanium-bismuth glass have been studied. The Raman spectrum investigation indicates that PbCl₂ plays an important role in the formation of glass network, and has an important influence on the upconversion luminescence owing to lower phonon energy. Intense green and red emissions centered at 525, 546, and 657 nm, corresponding to the transitions ²H_11/2→⁴I_15/2, ⁴S_3/2→⁴I_15/2, and ⁴F_9/2→⁴I_15/2, respectively, were observed at room temperature. The quadratic dependence of the 525, 546, and 657 nm emissions on excitation power indicates that a two-photon absorption process occurs under 975 nm excitation.