Theoretical study of metal-insulator transition in rhombohedral vanadium sesquioxide

The electronic structure and the metal-insulator transition (MIT) of V₂O₃ are investigated in the framework of density functional theory and GGA+U. It is found that, both the insulating and metallic phases can be realized in rhombohedral structure by varying the on-site Coulomb interaction, and the MIT in V₂O₃ can take place without any structure phase transition. Our calculated energy gap (0.63 eV) agrees with experimental result very well. The metallic phase exhibits high spin (S=1) character, but it becomes S=1/2 in insulating phase. According to our analysis, the Mott-Hubbard and the charge-transfer induce the MIT together, and it supports the mechanism postulated by Tanaka (2002) [11].     

应变Si/(001)Si1-xGex电子迁移率

依据离化杂质散射、声学声子散射和谷间散射的散射模型,在考虑电子谷间占有率的基础上,通过求解玻尔兹曼方程计算了不同锗组分下,不同杂质浓度时应变Si/(001)Si_1-xGe_x的电子迁移率.结果表明:当锗组分达到0.2时,电子几乎全部占据Δ₂能谷;低掺杂时,锗组分为0.4的应变Si电子迁移率与体硅相比增加约64%;对于张应变Si NMOS器件,从电子迁移率角度来考虑不适合做垂直沟道.选择相应的参数,该方 关键词： 电子谷间占有率 散射模型 锗组分 电子迁移率     

4H-SiC中基面位错发光特性研究

本文利用阴极荧光(CL)和选择性刻蚀的方法对4H-SiC同质外延材料中基面位错的发光特性进行了研究. 结果表明螺型基面位错(B_TSD)和混合型基面位错(B_MD)分别具有绿光和蓝绿光特性,其发光峰分别在530 nm附近和480 nm附近. 从测试结果中还发现B_MD 的发光位较B_TSD有所蓝移,分析认为B_TSD位错芯附近原子沿伯格斯 关键词： 4H-SiC 基面位错 发光特性 禁带宽度     

单轴〈111〉应力硅价带结构计算

基于k·p微扰法计算了单轴〈111〉应力作用下硅的价带结构, 并与未受应力时体硅的价带结构进行了比较. 给出了单轴〈111〉应力作用下硅价带顶处能级的移动、分裂以及空穴有效质量的变化情况. 计算所得未受应力作用时硅价带顶处重空穴带、轻空穴带有效质量与相关文献报道体硅有效质量结果一致. 拓展了单轴应力硅器件导电沟道应力与晶向的选择范围,给出的硅价带顶处重空穴带、轻空穴带能级间的分裂值和有效质量随应力的变化关系可为单轴〈111〉应力硅其他物理参数的计算提供参考. 关键词： 单轴应力硅 k·p法')" href="#">k·p法 价带结构     

漏致势垒降低效应对短沟道应变硅金属氧化物半导体场效应管阈值电压的影响

结合应变硅金属氧化物半导体场效应管(MOSFET)结构,通过求解二维泊松方程,得到了应变Si沟道的电势分布,并据此建立了短沟道应变硅NMOSFET的阈值电压模型.依据计算结果,详细分析了弛豫Si_1－βGe_β中锗组分β、沟道长度、漏电压、衬底掺杂浓度以及沟道掺杂浓度对阈值电压的影响,从而得到漏致势垒降低效应对小尺寸应变硅器件阈值电压的影响,对应变硅器件以及电路的设计具有重要的参考价值. 关键词： 应变硅金属氧化物半导体场效应管 漏致势垒降低 二维泊松方程 阈值电压模型     

A new probe of neutron skin thickness

The correlation between neutron-to-proton yield ratio (R_np) and neutron skin thickness (δ_np) in neutron-rich projectile induced reactions is investigated within the framework of the Isospin-Dependent Quantum Molecular Dynamics (IQMD) model. The density distribution of the Droplet model is embedded in the initialization of the neutron and proton densities in the present IQMD model. By adjusting the diffuseness parameter of neutron density in the Droplet model for the projectile, the relationship between the neutron skin thickness and the corresponding R_np is obtained. The results show strong linear correlation between R_np and δ_np for neutron-rich Ca and Ni isotopes. It is suggested that R_np may be used as an experimental observable to extract δ_np for neutron-rich nuclei, which is very interesting in the study of the nuclear structure of exotic nuclei, the equation of state (EOS) of asymmetric nuclear matter and neutron-rich matter in astrophysics, etc.     

Symmetrized Wavefunctions in a Quantum N-Body System

A general method for symmetrizing the generalized radial functions in a quantum N-body system to belong to the irreducible representation of the proper point symmetry group of the system is presented, based on irreducible bases in the point group space.     

KrF激光受激布里渊散射反射率稳定性的研究

实验研究发现抽运功率密度（或抽运能量）的波动引起的受激布里渊散射(SBS)反射率的不稳定程度受实验参数（抽运能量、介质气压和透镜焦距）的影响.当抽运能量、介质气压和透镜焦距这三个参数同时满足下列条件时可以获得稳定的输出：抽运能量超过5倍的SBS阈值，介质气压在16×105Pa和透镜焦距在15—50cm的范围内；同时还发现当改变实验参数时SBS反射率与稳定性的变化规律完全一致，反射率越高稳定性越好.通过理论分析得到 SBS反射率的相对稳定度实际上是受GIL因子的影响，理论计算与实验符合得很好. 关键词： KrF激光 受激布里渊散射 反射率 稳定度