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71.
72.
应用TGT法生长了直径为75mm的U:CaF2晶体,宏观上透明完整.应用公式K0=Cs/Cl计算了U在CaF2晶体中的分凝系数等于0.53.应用溶质分布一般公式Cs=K0C0(1-g)K0-1,计算U的浓度分布与测量值,数值符合说明晶体生长过程接近平衡状态.分析不同条件下生长的U: CaF2晶体的晶胞参数和吸收光谱,结果表明生长气氛决定U的价态及电荷补偿机理:无PbF2存在的条件下,U为+4价,晶体呈绿色;PbF2的加入起到氟化去氧作用,U倾向于以离子半径最接近于Ca2+的U3+存在,晶体呈红色.从晶体生长开始到结束的部位,U3+:CaF2晶体吸收光谱的峰位不变,峰强呈现与U浓度相同的增加趋势.U3+:CaF2晶体外层厚约5mm处呈黄色,含有U3+和U2+的混合价态离子,其原理是石墨坩埚的还原作用通过单质铅,使部分的U3+进一步还原成了U2+.
关键词:
铀
氟化钙晶体
分凝系数
晶胞参数 相似文献
73.
本文进行了液体CO2在长度为0.5~5.9 m,内径为0.7 mm和2.0 mm,入出口压差为2.2 MPa和2.5 MPa的毛细管内的质量流量及临界流的实验研究.实验结果表明液体CO2在毛细管中的质量流量随毛细管内径、入出口压差的增大而增大,随长度的增加而逐渐减小;结果同时表明液体CO2在毛细管中产生了临界流现象,临界流随毛细管内径的增大而增大.在实验基础上回归出了适用于本实验条件的液体CO2在毛细管内的质量流量经验关联式,具有一定的工程指导意义. 相似文献
74.
A (w,r) cover‐free family is a family of subsets of a finite set such that no intersection of w members of the family is covered by a union of r others. A (w,r) superimposed code is the incidence matrix of such a family. Such a family also arises in cryptography as the concept of key distribution pattern. In the present paper, we give some new results on superimposed codes. First we construct superimposed codes from super‐simple designs which give us results better than superimposed codes constructed by other known methods. Next we prove the uniqueness of the (1,2) superimposed code of size 9 × 12, the (2,2) superimposed code of size 14 × 8, and the (2,3) superimposed code of size 30 × 10. Finally, we improve numerical values of upper bounds for the asymptotic rate of some (w,r) superimposed codes. © 2004 Wiley Periodicals, Inc. 相似文献
75.
电子束流品质对自由电子激光小信号增益影响的计算 总被引:1,自引:0,他引:1
对电子束有一定初始能量分散或角度分散时的自由电子激光小信号增益用较简便的方法进行了分析计算,并给出了一个渐近公式,结果与用计算机模拟解自由电子激光微分方程组得到的结果一致。 相似文献
76.
77.
Neodymium doped bismuth layer structure ferroelectrics (BLSFs) ceramics CaBi4−xNdxTi4O15 (x=0, 0.25, 0.50, 0.75) were prepared by solid-state reaction method. X-ray diffraction pattern showed that single phase was formed when x=0-0.75. The refined lattice parameters showed that a (b) axes decrease at x=0.25 and increase with more Nd3+ dopant. The effects of Nd3+ doping on the dielectric and ferroelectric properties of CaBi4Ti4O15 ceramics are studied. Nd3+ dopant decreased the Curie temperature linearly, and the dielectric loss, tan δ, as well. The remnant polarization of Nd3+ doped CaBi4Ti4O15 ceramics was increased by 80% at x=0.25, while more Nd3+ dopant decreased the remnant polarization. CaBi3.75Nd0.25Ti4O15 ceramics had the largest piezoelectric constant d33. The structure and properties of CaBi4−xNdxTi4O15 ceramics showed that Nd3+ may occupy different crystal locations when Nd3+ content x is less than 0.25 and more than 0.50. 相似文献
78.
GAO Xiaoyan CAI Xiao CAO Zeng CUI Chenghe 《核工业西南物理研究院年报(英文版)》2004,(1):54-56
HL-2A is the first divertor tokamak in China. The vacuum system is one of the important parts of the HL-2A tokamak, which has to be work well during the physics campaign in 2004. As the tokamak machine is separated from the operation staff during discharges, to guarantee the safe and reliable operation of the vacuum system, it is necessary to watch the vacuum system outside the machine hall with an automatic monitoring system. The paper describes the design and manufacture of the monitoring system. 相似文献
79.
The vacuum system of today's tokamak devices is designed to meet the operational requirements of the experiments. The operation can be divided into five modes, (1) pumping down and leak detecting of the vacuum vessel, (2) baking, (3) plasma-facing component (PFC) conditioning, (4)evacuating and controlling of the particles at plasma edge, (5) plasma discharge experiments. 相似文献
80.
Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature
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Hydrogen-free silicon nitride (SiNx) films were deposited at room temperature by microwave electron cyclotron resonance (MW-ECR) plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm. 相似文献