Phasebehaviour of a 3D–Stell–Hemmer Liquid

Investigations for one– and two–dimensional systems have shown that the Stell–Hemmer potential can produce liquid–state anomalies. By means of a Monte Carlo simulation for a N; V; T–ensemble we calculate the phase behaviour and show that these anomalies disappear in three dimensions.     

A nonsmooth Newton method for variational inequalities,I: Theory

This paper presents a modified damped Newton algorithm for solving variational inequality problems based on formulating this problem as a system of equations using the Minty map. The proposed modified damped-Newton method insures convergence and locally quadratic convergence under the assumption of regularity. Under the assumption ofweak regularity and some mild conditions, the modified algorithm is shown to always create a descent direction and converge to the solution. Hence, this new algorithm is often suitable for many applications where regularity does not hold. Part II of this paper presents the results of extensive computational testing of this new method.Corresponding author.     

基于机器视觉的刀具轮廓在线检测方法的研究

超精密单点金刚石车削过程中需要对刀具参数进行检测。基于机器视觉原理,采用新型的机械结构设计了新型刀具在线检测系统。通过垂直放置的两组由同轴远心镜头和CMOS相机组成的光学系统来获取车刀刀尖正面及侧面的图像,再经图像处理系统来获取刀具的轮廓及位置信息,完成对刀具轮廓及位置的在线检测,实验验证可实现测量的重复性定位精度达1μm。在线检测的方式借助了超精密车床自身的高精度和运动机构,可以保证相机焦点和机床主轴之间的相对位置关系,弥补了目前刀具检测系统稳定性差和重复性精度低的不足,提高了加工的整体效率。     

基于B3PyMPM∶Cs高效叠层OLED器件的制备

以B 3 PyMPM∶Cs/Al/HAT-CN作为电荷生成单元制备高效叠层绿色磷光有机电致发光器件,叠层器件的最大电流效率和最大流明效率分别为172.2 cd/A和111.0 lm/W,在5 mA/cm^2电流密度下,叠层器件的电压和亮度分别为传统器件的2.04倍和2.84倍.为了探究叠层器件性能优于传统器件的原因,研究了电荷生成单元内的电荷产生和注入过程,以及薄层铝对电子注入特性和电荷生成单元稳定性的影响.实验结果表明,电荷能够有效地在电荷生成单元内产生并顺利注入电子传输层中,B3PyMPM∶Cs和HAT-CN间Al薄层的插入能够进一步提高电子注入效率及器件结构的稳定性.     

A versatile 10-TW laser system with robust passive controls to achieve high stability and spatiotemporal quality

We discuss the design, construction, and output characteristics of a versatile 10-TW Ti:sapphire laser system of high stability and spatiotemporal quality. By pumping the three amplifier stages independently and running at saturation, an energy stability of 1.3% is obtained. Controls over self-phase modulation, high-order dispersion, spatial aberration, and amplified spontaneous emission are done by robust passive methods. A time–bandwidth product of 1.2 times the Fourier-transform limit with a temporal contrast larger than 5×10⁸ in the -10-ns scale, 2×10⁶ in the -100-ps scale, and 10⁴ in the -1-ps scale are achieved. The beam can be focused down to 1.2 times the diffraction limit with 80% of the energy enclosed in the Gaussian focal spot. Beam-pointing stability is <13 rad. Such high stability and spatiotemporal quality have made possible precision control over extremely nonlinear laser–plasma experiments, and the capability of computerized independent control of prepulse, pump pulse, probe pulse, and on-line diagnoses have made this system highly versatile and reliable. PACS 42.60.By; 42.65.Re; 42.60.Jf     

One-pot synthesis of ferromagnetic Fe2.25W0.75O4 nanoparticles as a magnetically recyclable photocatalyst

ZnO nanostructures, including nanowires, nanorods, and nanoneedles, have been deposited on GaAs substrates by the two-step chemical bath synthesis. It was demonstrated that the O₂-plasma treatment of GaAs substrates prior to the sol?Cgel deposition of seed layers was essential to conformally grow the nanostructures instead of 2D ZnO bunches and grains on the seed layers. Via adjusting the growth time and concentration of precursors, nanostructures with different average diameter (26?C225?nm), length (0.98?C2.29???m), and density (1.9?C15.3?×?10⁹?cm^?2) can be obtained. To the best of our knowledge, this is the first demonstration of ZnO nanostructure arrays grown on GaAs substrates by the two-step chemical bath synthesis. As an anti-reflection layer on GaAs-based solar cells, the array of ZnO nanoneedles with an average diameter of 125?nm, a moderate length of 2.29???m, and the distribution density of 9.8?×?10⁹ cm^?2 has increased the power conversion efficiency from 7.3 to 12.2?%, corresponding to a 67?% improvement.     

First-principles calculation of ZnS monolayer on Cu(111) surface

First-principles calculation is carried out on the interface of the ZnS(001) monolayerand Cu(111) surface. It is found that the ZnS monolayer significantly reconstructs aftergeometry optimization. The out-of-plane S atom has a positive displacement in thez directionwhile other atoms (Zn and S) have small displacements on the ZnS monolayer. The interfacestacking sequence has an influence on the flatness of the ZnS monolayer and the bindingenergy of the interface. There are two approaches for the ZnS monolayer to reach thelowest energy state which take place on the two kinds of S atoms in the ZnS monolayer andresult in the bulging feature. The van der Waals (vdW) interaction exists between ZnSmonolayer and Cu surface.     

Research on Quantum Authentication Methods for the Secure Access Control Among Three Elements of Cloud Computing

Cloud computing and big data have become the developing engine of current information technology (IT) as a result of the rapid development of IT. However, security protection has become increasingly important for cloud computing and big data, and has become a problem that must be solved to develop cloud computing. The theft of identity authentication information remains a serious threat to the security of cloud computing. In this process, attackers intrude into cloud computing services through identity authentication information, thereby threatening the security of data from multiple perspectives. Therefore, this study proposes a model for cloud computing protection and management based on quantum authentication, introduces the principle of quantum authentication, and deduces the quantum authentication process. In theory, quantum authentication technology can be applied in cloud computing for security protection. This technology cannot be cloned; thus, it is more secure and reliable than classical methods.     

Interaction of localized electronic states with the conduction band: band anticrossing in II-VI semiconductor ternaries

We report a strongly nonlinear pressure dependence of the band gaps and large downward shifts of the conduction band edges as functions of composition in ZnS xTe (1-x) and ZnSe (y)Te (1-y) alloys. The dependencies are explained by an interaction between localized A1 symmetry states of S or Se atoms and the extended states of the ZnTe matrix. These results, combined with previous studies of III-N-V materials define a new, broad class of semiconductor alloys in which the introduction of highly electronegative atoms leads to dramatic modifications of the conduction band structure. The modifications are well described by the recently introduced band anticrossing model.