受扰统一混沌系统基于RBF网络的主动滑模控制

针对受外扰影响的统一混沌系统,提出一种基于径向基函数(RBF)神经网络的主动滑模自适应控制方法.将被控系统分解为受控子系统和自由子系统,利用主动控制思想,建立受控子系统在目标点处的状态误差的可控标准型,设计出一个结构简单的基于滑模趋近率在线参数整定的RBF函数神经网络控制器,并且基于Lyapunov稳定性理论分析了系统的稳定性.仿真结果表明该控制器对系统参数突变和外部干扰具有鲁棒性,同时抑制了抖振. 关键词： 统一混沌系统 主动控制 滑模控制 RBF网络     

Passive harmonic mode locked all-normal-dispersion Yb-doped fibre lasers

Passive harmonic mode-locking of dissipative solitons is demonstrated in all-normal dispersion Yb-doped fibre lasers.A difference equation model of the mode-locked fibre lasers is adopted to simulate the intra-cavity nonlinear dynamics.Hysteresis phenomena around the mode-locking threshold,and the effect of introducing linear phase bias are discussed.The passive harmonic mode-locking as one kind of multipulsing operations is revealed.Moreover,the simulation shows the bistability between multipulsing and single-pulse or period multiplication.     

基于迈克耳孙干涉仪的微机械光纤信号调制器

基于迈克耳孙干涉仪原理,设计了利用双光束干涉效应的微机械光纤信号调制器.实验中从输入端输入的光纤信号,经分光板后分为光强相等的透射光束与反射光束;调制信号以电压形式加载于压电陶瓷,使其伸缩振荡,以调制透射光束与反射光束之间的光程差;透射光束与反射光束经透镜聚焦后在输出端面发生双光束干涉,在输出端输出被调制的光信号,再耦...     

Synthesis of titanium nitride thin films deposited by a new shielded arc ion plating

Thin films of titanium nitride (TiN) were deposited on stainless steel substrates by a modified deposition technique, double-layered shielded arc ion plating with vicarious circular holes (DL-SAIP). The results show that the TiN film with the distance of 10 mm between the double-layered shield plates had the least droplets. The deposition rate of the films prepared with the new technique was more homogeneous than that of all the other shielded arc ion plating. The film/substrate adhesion and microhardness values of the TiN films were higher than 40 N and 18 GPa, respectively. Thus such TiN thin films can be expected in applications.     

Sol-gel preparation and characterization of nanoporous ZnO/SiO2 coatings with broadband antireflection properties

Nanoporous ZnO/SiO₂ bilayer coatings were prepared on the surface of glass substrates via sol-gel dip-coating process. The structural, morphological and optical properties of the coatings were characterized. The refractive indices of ZnO layer and SiO₂ layer are 1.34 and 1.21 at 550 nm, respectively. The transmittance and reflectance spectra of the coatings were investigated and the broadband antireflection performance of the bilayer structure was determined over the solar spectrum. The solar transmittances in the range of 300-1200 nm and 1200-2500 nm are increased by 6.5% and 6.2%, respectively. The improvement of transmittance is attributed to the destructive interference of light reflected from interfaces between the different refractive-index layers with an optimized thickness. Such antireflection coatings of ZnO/SiO₂ provide a promising route for solar energy applications.     

Influence of annealing process on conductive properties of Nb-doped TiO2 polycrystalline films prepared by sol-gel method

Nb-doped TiO₂ (TNO) thin films were prepared by sol-gel dip-coating method with Nb content in a wide range of 0-20 at.%. The prepared films were preheated at 400 °C and then undertaken by two different post-annealing processes: (a) three times vacuum annealing and (b) multi-round annealing. The designed multi-round annealing was shown to be an effective way to improve the conductive properties of the films, compared to the traditional vacuum annealing process. The minimum resistivity reached approximately 0.5 Ω cm with Nb doping concentration around 12 at.%, and the carrier density increased with Nb-doping concentration until the critical point of 12 at.%, which might be the optimal doping content for our TNO films prepared by sol-gel method.     

VLS synthesis of disordered CdSe nanowires and optical properties of an individual CdSe nanowire

Disordered CdSe nanowires have been successfully grown on silicon substrates by Au-catalyzed vapor–liquid–solid (VLS) mechanism. Scanning electron microscopy (SEM) reveals that the as-prepared products consist of a large quantity of 1D nanowire disordered predominantly perpendicular to the surface of the substrate. A plausible formation mechanism of disordered CdSe nanowires is proposed here. X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) confirm on their hexagonal wurtzite crystallite structure. An intense red near-band edge emission (702 nm) is observed based on room temperature photoluminescence measurements of individual nanowire. This kind of CdSe nanostructures may be used in optoelectronics devices in the near future.     

Integrated fiber Michelson interferometer based on poled hollow twin-core fiber

We propose an integrated fiber Michelson interferometer based on a poled hollow twin-core fiber. The Michelson interferometer can be used as an electro-optic modulator by thermal poling one core of the twin-core fiber and introducing second-order nonlinearity in the fiber. The proposed fiber Michelson interferometer is experimentally demonstrated under driving voltages at the frequency range of 149 to 1000 Hz. The half-wave voltage of the poled fiber is 135 V, and the effective second-order nonlinear coefficient χ2 is 1.23 pm/V.     

Simultaneous quantization of bulk conduction and valence states through adsorption of nonmagnetic impurities on Bi2Se3

Exposing the (111) surface of the topological insulator Bi(2)Se(3) to carbon monoxide results in strong shifts of the features observed in angle-resolved photoemission. The behavior is very similar to an often reported "aging" effect of the surface, and it is concluded that this aging is most likely due to the adsorption of rest gas molecules. The spectral changes are also similar to those recently reported in connection with the adsorption of the magnetic adatom Fe. All spectral changes can be explained by a simultaneous confinement of the conduction band and valence band states. This is possible only because of the unusual bulk electronic structure of Bi(2)Se(3). The valence band quantization leads to spectral features which resemble those of a band gap opening at the Dirac point.     

Simple model for the ionization of helium atoms by fully and partially stripped ions in the strong interaction region

Theoretical calculations employing the modified over-barrier model to investigate single and double ionization cross sections of helium in collisions with highly charged ions are presented in the strong perturbation region. It shows the velocity and charge state dependences of cross sections, which coincides with the available experimental data. In order to determine the reliability of this model for partially stripped projectiles, the cross-section ratios have been measured for CZp+, OZp+-He (Zp=1-4) by the coincidence technique in the velocity range of 1-4.5 a.u. The calculated results are approximately in agreement with the experimental data.