非临界相位匹配RTP晶体1.6 μm光参量振荡器

采用非临界相位匹配切割,尺寸4 mm4 mm20 mm的磷酸钛氧铷（RTP）晶体作为非线性光学晶体,进行了半导体激光端面抽运Nd:YAG/RTP的内腔式光参量振荡获得人眼安全激光的实验研究。对比了不同声光调Q重复频率下的信号光输出特性。在10.5 W的抽运功率和15 kHz的重复频率下,获得了最高900 mW的1.62 m人眼安全激光输出,光光转换效率达8.6%。1.62 m信号光和对应的1.06 m基频光的脉冲宽度分别为4.6和8.2 ns。信号光中心波长在1618 nm,谱线宽度小于0.5 nm。     

Boundary reflection from curved liquid surfaces and its application

A boundary light reflection from curved liquid surfaces was discovered. Due to the wetting effect, the liquid surface near the plate which was inserted into the liquid was deformed. When a collimated light beam vertically illumined the curved liquid surface, special reflective patterns of a strip-shape dark region in the center and the visibility interference fringes on both sides was observed for the up-curved liquid surface. The width of the dark region increases with the decreasing width of the incident beam. The relation of the dark region width and the incident beam width was derived theoretically. The slope and the height of curved liquid surface were obtained directly from measuring the dark central region width of the reflection pattern and the incident beam width. Furthermore, the analytic expression of the profile of the curved liquid surface was derived. As a result, it shows that an effective and practical technique for measuring the characterization of curved liquid surface was found.     

Observation of macroscopic quantum tunneling in a single Bi2Sr2CaCu2O8+delta surface intrinsic Josephson junction

We report on the first unambiguous observation of macroscopic quantum tunneling (MQT) in a single submicron Bi(2)Sr(2)CaCu(2)O(8+delta) surface intrinsic Josephson junction (IJJ) by measuring its temperature-dependent switching current distribution. All relevant junction parameters were determined in situ in the classical regime and were used to predict the behavior of the IJJ in the quantum regime via MQT theory. Experimental results agree quantitatively with the theoretical predictions, thus confirming the MQT picture. Furthermore, the data also indicate that the surface IJJ, where the current flows along the c axis of the crystal, has the conventional sinphi current-phase relationship.     

Effects of N2 addition on nanocrystalline diamond films by HFCVD in Ar/CH4 gas mixture

Nanocrystalline diamond (NCD) films were grown on silicon substrates by hot filament chemical vapor deposition in Ar/N₂/CH₄ gas mixtures. The effects of seeding process prior to deposition, the total gas pressure, and concentration of nitrogen on the grain size, morphology and bonding nature in HFCVD technique were investigated. The results indicated that a low total gas pressure is favorable for nanosized diamond crystallites. Films micrograph obtained from scanning electron microscopy showed diamond nanograins elongated with the addition of nitrogen in the plasma. Crystal structure investigations were carried out by X-ray diffraction measurements for deposited films. An increase in the size of crystallite is also observed from XRD measurements in NCD film when nitrogen was added in plasma. From Raman spectra, it was observed that the relative intensity of G peak increases indicating more graphite content after nitrogen added in the plasma. The effects of the nitrogen incorporation in nanocrystalline films in HFCVD are discussed.     

巨共振激发的相对论效应

在相对论量子场论(QHD)的框架下,得到了相对论线性Vlasov方程.基此计算了球形核¹⁶O、⁴⁰Ca、⁹⁰Zr及²⁰⁸Pb的巨偶极共振的强度函数分布.计算得到的巨共振中心能量,与实验结果比较有较好的符合.对计算结果作了简要的讨论,发现核子有效质量m^*和平均场自旋轨道耦合力对巨共振能量有着重要的效应.     

无光滤波六倍频微波信号产生的系统设计

基于两个级联偏振调制器,提出了一种高频谱纯度、稳定的六倍频微波信号产生方法。该方法通过适当调整偏振片的偏振方向、射频驱动信号电压和相位,实现无光滤波器条件下、任何波段六倍频微波信号的产生。利用Optisystem平台搭建的仿真系统,以S波段4 GHz信号为例,验证了该设计系统产生的六倍频信号质量,并分析了非理想射频驱动电压和相位对六倍频信号质量的影响,结果表明：该设计系统能产生最大光边带抑制比、射频无杂散抑制比分别为21.3,15.2 dB的六倍频微波信号;且非理想驱动电压和相位差的偏离应控制在理想值5%的范围之内。     

Electron-impact dissociation and transient properties of a stored LiH2 - beam

The fragmentation of LiH₂ ^- anions after electron impact was investigated at the heavy-ion storage ring TSR. The main reaction channel was found to be electron detachment followed by a breakup into LiH + H. In the first ms after production of the molecular ions in a cesium sputtering ion source, additional contributions were observed in the Li + H₂ and Li^- + H₂ channels, hinting at an initial population of a short-lived state of the anion. To gain a better understanding of the mechanisms underlying the observed behavior of the system, ab initio calculations of relevant potential energy surfaces were performed at selected geometries. The experimental findings are discussed in the light of these calculations.     

Modelling the spindle–holder taper joint in machine tools: A tapered zero-thickness finite element method

This study presents a tapered zero-thickness finite element model together with its parameter identification method for modelling the spindle–holder taper joint in machine tools. In the presented model, the spindle and the holder are modelled as solid elements and the taper joint is modelled as a tapered zero-thickness finite element with stiffness and damping but without mass or thickness. The proposed model considers not only the coupling of adjacent degrees of freedom but also the radial, tangential and axial effects of the spindle–holder taper joint. Based on the inverse relationship between the dynamic matrix and frequency response function matrix of a multi-degree-of-freedom system, this study proposes a combined analytical–experimental method to identify the stiffness matrix and damping coefficient of the proposed tapered zero-thickness finite element. The method extracts those parameters from FRFs of an entire specimen that contains only the spindle–holder taper joint. The simulated FRF obtained from the proposed model matches the experimental FRF quite well, which indicates that the presented method provides high accuracy and is easy to implement in modelling the spindle–holder taper joint.     

Symmetrical metallic and magnetic edge states of nanoribbon from semiconductive monolayer PtS2

Transition metal dichalcogenides (TMD) MoS₂ or graphene could be designed to metallic nanoribbons, which always have only one edge show metallic properties due to symmetric protection. In present work, a nanoribbon with two parallel metallic and magnetic edges was designed from a noble TMD PtS₂ by employing first-principles calculations based on density functional theory (DFT). Edge energy, bonding charge density, band structure, density of states (DOS) and simulated scanning tunneling microscopy (STM) of four possible edge states of monolayer semiconductive PtS₂ were systematically studied. Detailed calculations show that only Pt-terminated edge state among four edge states was relatively stable, metallic and magnetic. Those metallic and magnetic properties mainly contributed from 5d orbits of Pt atoms located at edges. What's more, two of those central symmetric edges coexist in one zigzag nanoribbon, which providing two atomic metallic wires thus may have promising application for the realization of quantum effects, such as Aharanov–Bohm effect and atomic power transmission lines in single nanoribbon.     

Comparative study of pulsed laser deposited HfO2 and Hf–aluminate films for high-k gate dielectric applications

The thermal stability and the electrical properties of HfO₂ and Hf–aluminate films prepared by the pulsed laser deposition technique have been investigated by X-ray diffraction, differential thermal analysis, capacitance–voltage correlation, leakage-current measurements and high-resolution transmission electron microscopy observation, respectively. A crystallization transformation from HfO₂ amorphous phase to polycrystalline monoclinic structure occurs at about 500 °C. In contrast, the amorphous structure of Hf–aluminate films remains stable at higher temperatures up to 900 °C. Rapid thermal annealing at 1000 °C for 3 min leads to a phase separation in Hf–aluminate films. Tetragonal HfO₂(111) is predominant, and Al₂O₃ separates from Hf–aluminate and is still in the amorphous state. The dielectric constant of amorphous HfO₂ and Hf–aluminate films was determined to be about 26 and 16.6, respectively, by measuring a Pt/dielectric film/Pt capacitor structure. A very small equivalent oxide thickness (EOT) value of 0.74 nm for a 3-nm physical thickness Hf–aluminate film on a n-Si substrate with a leakage current of 0.17 A/cm² at 1-V gate voltage was obtained. The interface at Hf–aluminate/Si is atomically sharp, while a thick interface layer exists between the HfO₂ film and the Si substrate, which makes it difficult to obtain an EOT of less than 1 nm. PACS 77.55.+f; 81.15.Fg; 73.40.Qv