布里渊动态光栅原理及其在光纤传感中的应用

自从2007年布里渊动态光栅被首次提出用于实现光存储以来,该技术得到了国际上的广泛关注和研究.布里渊动态光栅本质上是由相干声波场激发的折射率光栅,一般情况下两束抽运光(频率差等于光纤的布里渊频移)以相同的偏振态从光纤两端注入到光纤中,通过受激布里渊散射效应激发出相干声波场,即形成布里渊动态光栅.光纤布里渊动态光栅因具有全光产生、参数灵活可控的优点,已被广泛研究应用于光纤传感、光纤特性表征、光存储、全光信号处理、微波光子学和高精度光谱分析等.本文分析布里渊动态光栅产生和探测原理,重点探讨在高性能分布式光纤传感上的应用,这些应用包括高灵敏度温度和应变分布式传感、温度和应变同时解调、分布式横向压力传感、分布式静压力(气压或液压)传感、高空间分辨率分布式传感和高精度光谱分析.     

全气相化学激光体系的直流放电研究

为了提高化学激光体系(AGIL)中F原子的产率，采用直流放电引发方式，对棒式电极的放电特性进行了研究。在对NF3/He混合气体进行解离时，通过选择不同平衡电阻，得到了3 kW左右的放电注入功率。用光谱分析仪对F原子产率进行了测量。通过拟合计算可得:一个NF3分子能够解离出1.3～1.5个F原子。     

等离子体反应器中传热与流动的三维数值模拟

本文采用我们新发展的三维计算机程序,对有载气和颗粒从单个喷孔侧向喷射的等离子体反应器中的传热与流动以及颗粒的运动轨迹与加热历程进行了三维数值模拟,并与相应的二维数值模拟结果进行了比较。模拟结果表明侧向喷入的载气所引起的三维流动效应相当明显,不同的颗粒在反应器内的运动轨迹与加热历程也有明显差别。     

Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation

The hardening of the buried oxide (BOX) layer of separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad(SiO₂. The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.     

一种在弱酸性介质中有电化学发光性能的鲁米诺衍生物

报道了一种鲁米诺的衍生物-3-(1-乙酰丙酮偶氮)苯二甲酰肼在酸性介质中的电化学发光行为,该化合物与鲁米诺类似,发生两步电化学氧化反应,但其氧化电位较鲁米诺低约0.5V,在氧化铟锡玻璃电极上具有良好的电化学发光性能,有效地避免了氧化铟锡玻璃电极本身的发光干扰.不仅在碱性介质中具有较高的电化学发光效率,而且在酸性介质中也产生较稳定的电化学发光,在1.0×10-6mol/L以上浓度,电化学发光强度与浓度有良好的线性关系.     

IMPROVED GENERALIZED ADMITTANCE MATRIX TECHNIQUE AND ITS APPLICATIONS TO RIGOROUS ANALYSIS OF MILLIMETER-WAVE DEVICES IN RECTANGULAR WAVEGUIDE

An improved generalized admittance (GAM) matrix technique is presented in this paper. Matrix transformation eliminates the singularity factor of GAM, denominator (1+Γ), because of new presentations of GAM. The relationship equations between II-port current and I-port incidence wave is computed by mode matching method. The generalized scattering matrix (GSM) of waveguide structure and its discontinuity problems is obtained with relationship equations and reflection coefficients. The GSM’s of millimeter-wave multistepped bend and T-junction in rectangular waveguide are computed by the improved GAM technique. The results comparisons between the proposed method and commercial software HFSS10.0 show the validity of the proposed method, which improves the validity of the GAM technique and reduces mathematical efforts. It is general, very efficient and can be used to solve other complicated and multiport network problems.     

聚合物纳米孔隙增透膜制备工艺的研究

论述了聚合物纳米孔隙增透膜的制备工艺流程,分析了聚合物材料分子量、实验环境温度和湿度、溶剂挥发性等条件对纳米孔隙增透膜的影响。研究表明,聚合物材料分子量的增大、温度的降低、湿度的升高以及采用挥发性弱的溶剂都将导致增透膜孔隙尺寸的增大,孔隙越大其对光的散射损耗就会增大,所以增透膜的透过率就越低。通过大量的试验分析得出一组较理想的工艺参量:使用低分子量的聚合物材料(小于15 kg/mol),环境温度大于25℃、环境相对湿度小于30%,在采用低沸点的溶剂如四氢呋喃等措施下可有效降低增透膜散射损耗。     

Scanning infrared microscopy investigation of copper precipitation in cast multicrystalline silicon

The behavior of copper precipitation in cast multicrystalline silicon (mc-Si) annealed at different temperatures under air cooling (30 K/s) or slow cooling (0.3 K/s) was investigated by scanning infrared microscopy (SIRM). Comparing to Czochralski-grown silicon (Cz-Si), copper precipitated more easily in mc-Si, and the lowest temperature of copper precipitation in mc-Si was about 700 °C, lower than that in Cz-Si. It was also observed that copper preferably precipitated on grain boundaries so that near the grain boundaries the denuded zone formed. The results indicate that the defects including dislocations, grain boundaries and microdefects, as the heteronucleation sites, enhanced copper precipitation. Moreover, cooling rates had a great influence on the copper precipitation, especially at lower annealing temperatures. Generally air cooling led to the formation of high density of copper-precipitate colonies.     

Semiconductor optical amplifier used as regenerator for degraded differential phase-shift keying signals

Phase and amplitude regeneration are necessary for degraded differential phase-shift keying communication systems.This paper proposes a regenerator based on semiconductor optical amplifier for differential phase-shift keying signals.The key regeneration mechanism is theoretically analysed.The effectiveness of semiconductor optical amplifier based regenerator is demonstrated by comparing the bit error rate and eye diagrams before and after regeneration for 40-Gbit/s differential phase-shift keying 1080-km transmission systems.The results show that regeneration effects are very well.Bit error rate is less than 10 12 with the regenerator.