R_2Fe_17_C化合物的结构与内禀磁性的研究

本文系统研究了R_2Fe_17_C(R=Y,Sm,Gd,Tb、Dy.Er) 化合物的结构与内享磁性, 井与相应的R_2Fe_17_C 化合物进行了比较.R_2Fe_17_C 的居里温度比相应氏R_2Fe_17 的居里温度增加大约200K. 本文讨论了C 原子对该化合物结构与磁性的影响, 同时, 还对Sm_2(Fe_1-xCo_x)_17C系列化合物进行了研充. 关键词：     

Millimeter wave beams diffracted from reflecting gratings

According to the angular-spectrum method, a radiation beam of an antenna horn in the Fresnal region is decomposed into the plane waves with the fast Fourier transform algorithm and the waves diffracted from a reflection grating are superposed as a diffracted beam. Compared with the reflected beam from the same size mirror, the radiation half width of the diffracted beam from a grating is narrower and its lateral shape is shift. These performances have been experimentally verified at Ka-band by: (1). The relative diffraction efficiencies in the first order with two triangular gratings which is put along propagating direction of a beam produced by a conical lens-horn. (2). H-plane lateral width with power—3dB lapsed of the focus beam from a grating and a mirror in a grating spectrometer for millimeter waves (25–100 GHz).     

Global existence and blow-up of solutions to a parabolic system with nonlocal sources and boundaries

This paper deals with a semi-linear parabolic system with nonlinear nonlocal sources and nonlocal boundaries.By using super-and sub-solution techniques,we first give the sufficient conditions that the classical solution exists globally and blows up in a finite time respectively,and then give the necessary and sufficient conditions that two components u and v blow up simultaneously.Finally,the uniform blow-up profiles in the interior are presented.     

应变Si1-xGex层中p型杂质电离常温和低温特性

本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.     

TiN/Al2O3纳米多层膜的共格外延生长及超硬效应

采用多靶磁控溅射法制备了一系列具有不同Al2O3调制层厚度的TiN/Al2O3纳米多层膜.利用X射线能量色散谱、X射线衍射、扫描电子显微镜、高分辨透射电子显微镜和微力学探针表征了多层膜的成分、微结构和力学性能.研究结果表明,在TiN/Al2O3纳米多层膜中,单层膜时以非晶态存在的Al2O3层在厚度小于1.5 nm时因TiN晶体层的模板效应而晶化,并与TiN层形成共格外延生长,相应地,多层膜产生硬度明显升高的超硬效应,最高硬度可达37.9 GPa.进一步增加多层膜中Al2O3调制层的层厚度,Al2O3层逐渐形成非晶结构并破坏了多层膜的共格外延生长,使得多层膜的硬度逐步降低.     

H原子与CO2分子碰撞的化学反应与能量转移

用时间分辨傅立叶红外发射光谱的方法对H原子与CO2分子的碰撞动力学进行了实验研究．用紫外激光光解的方法分别制备出三个不同平动能为174．7、241．0和306．2 kJ／mol的氢原子,并引发H CO2→OH CO反应．观察到了反应的产物,即振动激发的CO (v≤2)．同时也看到了在H原子与CO2分子的碰撞中发生高效的T- V能量转移．CO2的反对称伸缩模的最高振动能级为v=4．化学反应与能量转移的速率之比大约为10．     

正则带的半格结构

Petrich解决了一般带的构造定理（见[1]或[2]），在此基础上，我们将证明正则带（满足等式axya=axaya的带）的一些特征，并给出一个带为正则带或右似正规带（满足等式xya=xaya的带）的充分必要条件，这些结果是Yamada和Kimura的关于正规带（满足等式axya=ayxa的带）的结果的推广，正规带被他们描述为矩形带的强半格（见[1]或[3]）。     

Microstructure of a-SiOx:H

A set of a-SiO_x:H (0.52 <x< 1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250°C. The microstructure and local bonding configurations of the films are investigated in detail using micro-Raman scattering, X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It is found that the films are structural inhomogeneous, with five phases of Si, Si₂O:H, SiO:H, Si₂O₃:H and SiO₂ that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si) clusters that are spatially isolated. The average size of the clusters decreases with the increasing oxygen concentration x in the films. The results indicate that the structure of the present films can be described by a multi-shell model, which suggests that a-Si cluster is surrounded in turn by the subshells of Si₂O:H, SiO:H, Si₂O₃:H, and SiO₂.     

Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Large-scale preparation of thin strain-relaxed SiGe is achieved by combining ion implantation and ultrahigh vacuum chemical vapor deposition. The resulting materials were analyzed by double crystal X-ray diffraction, micro-Raman spectroscopy, and tapping mode atomic force microscope. Results revealed that 100-nm-thick Si_0.7Ge_0.3 layers with the diameter of 125 mm and full strain relaxation are successfully prepared by pre-modifying the Si substrates using 50 keV Ar⁺ ions. The strain relaxation is also disclosed to change with both ion species and energy. However, post-modification of SiGe by ion implantation will cause serious damage to the crystal structures, and result in the formation of poly-crystal SiGe.     

Photodecomposition of several compounds commonly used as sunscreen agents

The photolysis reactions of three compounds commonly used as a sunscreen agents, Parsol 1789 (1-[4-(1,1-dimethylethyl)phenyl]-3-(4-methoxyphenyl)-1,3- propanedione), Oxybenzone ((2-hydroxy-4-methoxyphenyl)phenyl-methanone) and Padimate O (2-ethylhexyl-4-(dimethylamino)benzoate), were investigated to provide a chemical background to aid in the understanding of the photosensitization of the sunscreen agents. Photolysis was carried out in cyclohexane for 70–140 h using a mercury vapor lamp (450W) without excluding oxygen.

Irradation of Parsol 1789 in cyclohexane yielded tert-butylbenzene, p-tert-butylbenzoic acid and p-methoxybenzoic acid; products obtained from the combination of the sunscreen with the solvent included the cyclohexyl esters of p-methoxybenzoic acid, p-tert-butylbenzoic acid and methanoic acid; products obtained from the solvent included cyclohexanol, cyclohexanone and dicyclohexyl ether.

Irradiation of Oxybenzone in the cyclohexane for 100 h produced no detectable products by either gas or liquid chromatographic analysis. Oxybenzone was recovered unchanged and no products were observed from the photoinitiated reaction of oxygen with the solvent.

Irradiation of Padimate O in cyclohexane yielded the ethylhexyl esters of p-aminobenzoic acid, p-monomethylaminobenzoic acid and p-dimethylamino (o/m)-methylbenzoic acid, as well as products from the photoinitiated reaction of oxygen with the solvent.