High photosensitivity in cis-polyphenylacetylene films irradiated with 60Co γ-ray

This paper reports that ⁶⁰Co γ-ray irradiation can convert cis-polyphenylacetylene (cis-PPA) films prepared with rare-earth coordination catalysts to highly photosensitive materials. The dependence of the photosensitivity on irradiation dose, preparation methods, and microstructure of the PPA films has been investigated by means of a potential discharge technique. The photosensitivity was enhanced with increasing irradiation dose. The critical dose to produce a light response was 5 × 10³ Gy. The maximum surface potential discharge rate was 618 V/s, and the dark decay was approximately 2 V/s for cis-PPA films irradiated with ⁶⁰Co γ-ray (dose: 2 × 10⁵ Gy). The cis-transoidal-PPA and an electrophotographic photoreceptor device incorporating cis-PPA showed a higher irradiation effect. The structure and properties of ⁶⁰Co γ-ray irradiated rare-earth PPA films are similar to the unirradiated films.     

A lithium ethyl­ene­diphos­phon­ate containing lithium chains and symmetric hydrogen bonds

In the title compound, catena‐poly[lithium‐μ₃‐ethyl­ene­diphos­phon­ato], [Li(C₂H₇O₆P₂)]_n, the supra­molecular monoclinic (C2/c) structure consists of one‐dimensional lithium chains [Li⋯Li = 2.7036 (8) Å] that are embedded within ethyl­ene­diphosphon­ate anions linked by strong symmetric hydrogen bonds [O⋯O = 2.473 (3) Å]. The Li atoms and the H atom in the symmetric hydrogen bond reside on twofold rotation axes and there is an inversion center at the mid‐point of the C—C bond of the ethylenediphosphonate ligand.     

相对论重离子碰撞实验中混合事件方法的研究

把RQMD(Relativistic Quantum Molecular Dynamics)产生器产生的数据输入作为原始事例取样,讨论了在比较复杂的背景情况下,一种新的混合事件方法,用以证实在相对论重离子碰撞实验中高能量激发共振态的存在.并以共振态重子Δ⁺⁺为例演示了这一方法的应用.     

Langduin C, a novel dimeric diterpenoid from the roots of Euphorbia fischeriana

Langduin C, a novel dimeric diterpenoid, was isolated from the roots of Euphorbia fischeriana and its structure was established by spectral data and single-crystal X-ray diffraction analysis.     

一类非线性微分方程的脉冲镇定

针对一般形式的常微分系统提出了脉冲指数镇定的概念，具体研究了一类分离变量型非线性常微分方程的脉冲镇定问题，得到了该方程可脉冲指数镇定的充分判据，全文的概念及结论突出了脉冲在方程稳定性方面的控制效果。     

Resistivity－temperature characteristics of sol gel YBa2Cu3Oy samples synthesized in flowing oxygen atmosphere

The relationship of resistivity versus synthesizing temperature of sol gel YBa_2Cu_3O_y samples was studied when prepared under flowing oxygen conditions. A set of high-temperature ρ－T curves was obtained for the whole process. After the sample finished the test measuring, its resistivity was ρ_{300}=9.83×10^{-3 }Ω·cm at room temperature. The ρ－T curve also showed that the orthorhombic－tetragonal phase transformation of sol-gel YBa_2Cu_3O_y sample occurred at 581℃ for the sample in the rising temperature process, but at 613℃ in the cooling process, lower than that of the samples made by using the conventional powder metallurgy methods.     

Highly enantioselective fluorescent recognition of α-amino acid derivatives

Bisbinaphthyl-based macrocycles are found to carry out enantioselective fluorescent recognition of α-amino acid derivatives. It is observed that one enantiomer of a N-protected phenyl glycine can increase the fluorescence intensity of the binaphthyl fluorophores by over 4-fold but the other enantiomer does not cause much fluorescence enhancement. This highly enantioselective fluorescent response makes the binaphthyl macrocycles practically useful for the enantioselective fluorescent recognition of the amino acid substrate.     

Mid-infrared generation based on a periodically poled LiNbO3 optical parametric oscillator

We report a nanosecond Nd:YVO_4-pumped optical parametric oscillator (OPO) based on periodically poled LiNbO_3 (PPLN). Tuning is achieved in this experiment by varying the temperature and period of the PPLN. The design of double-pass singly resonant oscillator (DSRO) and confocal cavity enables the OPO threshold to be lowered considerably, resulting in a simple, compact, all-solid-state configuration with the mid-infrared idler powers of up to 466mW at 3.41μm.     

Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction

Terbium-doped Zn_2SiO_4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO_2. X-ray diffraction (XRD) and UV－Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn_2SiO_4 in wellimite structure. Photoluminescence measurements of the Tb-doped Zn_2SiO_4 films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms.