Lattice disorder in silicon induced by 2.0 MeV Cu+ irradiation

The effect of 2.0 MeV Cu⁺ irradiation on Si(100) crystal has been studied by the Rutherford backscattering/channeling technique. Analysis of the lattice disorder distribution has been performed under 100 direction of tilting off from the target normal: 7°, 30°, and 45° as well as different doses. The lattice disorder distributions in Si(100) have been compared with TRIM'89 simulation. The results show that the lattice disorder distributions in Si(100) under different irradiation angles seem to be in good agreement with TRIM'89 simulation. When the dose increases up to 8.7×10¹⁴ ions/cm², the defect concentration increases leading to the formation of an amorphous layer.     

Characteristics analysis of metal-clad and absorptive dielectric waveguides by a simple and accurate perturbation method

We present a simple and accurate method for characteristic analysis of metal-clad dielectric waveguides and absorptive waveguides. The real partN of the complex modal indexN=N + iN is obtained by solving the corresponding real eigenvalue equation, and the imaginary partN is given by (n/), where= + i is the complex dielectric constant of the absorptive layer, and N/ is obtained by numerical differentiation. The method is straightforward, and the cumbersome solution of complex transcendental equations is completely eliminated. Results for simple structures are in good agreement with those obtained by exact analysis.     

Oscillations of certain second order nonlinear differential equations

A second order nonlinear differential equation

Inclusion of ferrous phenanthroline in molybdenum disulfide

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基于三维静电势参数研究C60溶解性的构效关系

在量子化学从头算基础上,对一系列溶剂化合物分子进行了结构优化和三维静电势参数计算,运用多元线性回归分析和神经网络方法对C60在121种不同溶剂的溶解性与计算的结构参数进行了构效关系研究.用建立起来的QSPR 关系式对15种不同结构类型溶剂进行了预测,并阐述了C60溶质与不同溶剂之间的相互作用,获得了满意的结果.     

镓在裸Si系和SiO2/Si系掺杂效应

Based on the diffusion action of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO_2/Si system is first presented in this paper ,the gallium doping effect in the two systems is analyzed theoretically. Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .     

Positron/positronium annihilation in nanocrystalline silicon thin films

Positron and positronium annihilation investigations were applied to nanocrystalline silicon (nc-Si) thin films, for the first time. The nc-Si thin films with average grain diameters of 3–5 nm show intense blue luminescence at room temperature. The nanometer-sized Si crystallites formed in amorphous Si (a-Si) matrix give rise to this luminescence. Very highS-parameters up to 0.62 were observed in the as-grown a-Si thin film suggesting positronium formation in the a-Si layer. The average lifetime of the positrons in the a-Si was determined to be about 520 ps. TheS-parameters dropped significantly to 0.53 by crystallization of the thin film at 800 °C for 10 seconds, which was almost the same to the value observed in bulk Si (100) substrate. Further crystallization from 60 seconds to 1 hour showed smaller change in theS-parameters than that from the a-Si to 10 seconds. The large change in theS-parameters due to the annealing might be caused by the formation of Si nanocrystallites in a-Si matrix suggesting that positron is a sensitive probe for structural investigations of the nc-Si materials.     

Microwave assisted hydrothermal synthesis of tin niobates nanosheets with high cycle stability as lithium-ion battery anodes

SnNb₂O₆ and Sn₂Nb₂O₇ nanosheets were synthetized via microwave assisted hydrothermal method, and innovatively employed as anode materials for lithium-ion battery. Compared with Sn₂Nb₂O₇ and the previously reported pure Sn-based anode materials, the SnNb₂O₆ electrode exhibited outstanding cycling performance.