Lenglart不等式与特殊半鞅的收敛集

本文讨论局部鞅和特殊半鞅的收敛集。我们给出Ｌｅｎｇｌａｒｔ不等式的一个推广形式，利用这一不等式对一些定理给出了简单证明，对一些结果作了改进和推广。     

Dynamic relaxation process of a 3D super crystal structure in a Cu:KTN crystal

In this Letter,we report the existence and relaxation properties of a critical phenomenon on called a 3D super crystal that emerges at T=TC?3.5℃,that is,in the proximity of the Curie temperature of a Cu:KTN sample.The dynamics processes of a 3D super crystal manifest in its formation containing polarized nanometric regions and/or polarized clusters.However,with strong coupling and interaction of microcomponents,the characteristic relaxation time measured by dynamic light scattering demonstrates a fully new relaxation mechanism with a much longer relaxation time.As the relaxation mechanism of a relaxator is so-far undetermined,this research provides a novel perspective.These results can help structure a fundamental theory of ferroelectric relaxation.     

暗怪波的相互作用

以耦合非线性薛定谔方程为理论模型,数值研究了两个一阶暗怪波在正常色散单模光纤中的相互作用.基于一阶暗怪波精确解,采用分步傅里叶数值模拟法,从间距、相位差和振幅系数比方面讨论相邻两个一阶暗怪波之间的相互作用.基于二阶暗怪波精确解,讨论了两个一阶暗怪波的非线性相互作用.研究结果表明:同相位情况下,间距参数T1为0、5、20时,相邻两个一阶暗怪波相互作用激发产生“扭结型”暗怪波.相比较于单个暗怪波发生能量的弥散,“扭结型”暗怪波分裂形成多个次暗怪波.反相位情况下,间距参数T1为2、7、12时,相邻两个一阶暗怪波相互作用也可以激发产生“扭结型”暗怪波.并且“扭结型”暗怪波初始激发的空间位置偏离原始单个暗怪波的位置5.振幅系数比越大,该空间位置越接近5.二阶暗怪波可以看作是两个一阶暗怪波的非线性叠加,复合型和三组分型二阶暗怪波与相邻两个一阶暗怪波的相互作用略有相似.     

An improved evaluation of the neutron background in the PandaX-Ⅱ experiment

In dark matter direct detection experiments,neutron is a serious source of background,which can mimic the dark matter-nucleus scattering signals.In this paper,we present an improved evaluation of the neutron background in the PandaX-II dark matter experiment by a novel approach.Instead of fully relying on the Monte Carlo simulation,the overall neutron background is determined from the neutron-induced high energy signals in the data.In addition,the probability of producing a dark-matter-like background per neutron is evaluated with a complete Monte Carlo generator,where the correlated emission of neutron(s)andγ(s)in the(α,n)reactions and spontaneous fissions is taken into consideration.With this method,the neutron backgrounds in the Run 9(26-ton-day)and Run 10(28-ton-day)data sets of PandaX-II are estimated to be(0.66±0.24)and(0.47±0.25)events,respectively.     

The first excited single-proton resonance in ~(15)F by complex-scaled Green's function method

The complex-scaled Green's function(CGF)method is employed to explore the single-proton resonance in 15F.Special attention is paid to the first excited resonant state 5/2+,which has been widely studied in both theory and experiments.However,past studies generally overestimated the width of the 5/2+state.The predicted energy and width of the first excited resonant state 5/2+by the CGF method are both in good agreement with the experimental value and close to Fortune's new estimation.Furthermore,the influence of the potential parameters and quadruple deformation effects on the resonant states are investigated in detail,which is helpful to the study of the shell structure evolution.     

Soliton molecules and the CRE method in the extended mKdV equation

The soliton molecules of the(1+1)-dimensional extended modified Korteweg–de Vries(mKdV)system are obtained by a new resonance condition, which is called velocity resonance. One soliton molecule and interaction between a soliton molecule and one-soliton are displayed by selecting suitable parameters. The soliton molecules including the bright and bright soliton, the dark and bright soliton, and the dark and dark soliton are exhibited in figures 1–3, respectively.Meanwhile, the nonlocal symmetry of the extended mKdV equation is derived by the truncated Painlevé method. The consistent Riccati expansion(CRE) method is applied to the extended mKdV equation. It demonstrates that the extended mKdV equation is a CRE solvable system. A nonauto-B?cklund theorem and interaction between one-soliton and cnoidal waves are generated by the CRE method.     

Numerical approach for the evolution of spin-boson systems and its application to the Buck–Sukumar model

We study the evolution properties of spin-boson systems by a systematic numerical iteration approach, which performs well in the whole coupling regime. This approach evaluates a set of coefficients in the formal expression of the time-dependent Schr?dinger equation by expanding the initial state in Fock space. This set of coefficients is unique for the spin-boson Hamiltonian studied, allowing one to calculate the time evolution from different initial states. To complement our numerical calculations, we apply the method to the Buck–Sukumar model. We find that when the ground-state energy of the model is unbounded and no ground state exists in a certain parameter space, the time evolution of the physical quantities is naturally unstable.     

湍流大气传输中跟踪抖动对远场影响的仿真研究

分析了跟踪抖动对湍流大气传输远场光斑的影响。基于麦克斯韦电磁场理论,采用大气相干长度对大气湍流进行描述,推导了发射光束因跟踪抖动导致光轴偏离的远场表达式。在此基础上,利用相位屏法模拟抖动引起的倾斜相位和大气折射率起伏引起的相位调制,并采用低频补偿的功率谱反演法对传输过程进行了数值仿真。分析了不同跟踪抖动、湍流强度条件下远场光斑质心脱靶量的变化,以及不同尺寸模拟目标的回波概率。分析结果表明,在传输距离为10 km时,强湍流造成的远场光斑脱靶量可达几十μrad;当跟踪抖动较大时,湍流强弱对脱靶量影响差别很小。最后,对一定尺寸的模拟目标,从探测回波概率的角度给出了发射系统跟踪抖动量的控制范围。     

基于局部加密纯无网格法非线性Cahn-Hilliard方程的模拟

为数值求解描述不同物质间相位分离现象的高阶非线性Cahn-Hilliard(C-H)方程,发展了一种基于局部加密纯无网格有限点集法(local refinement finite pointset method,LR-FPM).其构造过程为:1)将C-H方程中四阶导数降阶为两个二阶导数,连续应用基于Taylor展开和加权最小二乘法的FPM离散空间导数;2)对区域进行局部加密和采用五次样条核函数以提高数值精度;3)局部线性方程组求解中准确施加含高阶导数Neumann边值条件.随后,运用LR-FPM求解有解析解的一维/二维C-H方程,分析粒子均匀分布/非均匀分布以及局部粒子加密情况的误差和收敛阶,展示了LR-FPM较网格类算法在非均匀布点情况下的优点.最后,采用LR-FPM对无解析解的一维/二维C-H方程进行了数值预测,并与有限差分结果相比较.数值结果表明,LR-FPM方法具有较高的数值精度和收敛阶,比有限差分法更易数值实现,能够准确展现不同类型材料间相位分离非线性扩散现象随时间的演化过程.     

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers

Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_oc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.