基于应变片的自由活塞斯特林制冷机位移测试研究

压缩活塞与排出器的位移大小及相位差对自由活塞斯特林制冷机的制冷性能具有极其重要的影响。文中通过对目前各种位移测试方法优缺点分析,结合自由活塞式斯特林制冷机自身特点,提出了采用应变片响应涡旋柔性弹簧形变来测量活塞和排出器位移的新方法。通过分析、设计和标定,建立了一套基于应变片的自由活塞斯特林制冷机位移测量系统。实验测试结果表明,该位移测量系统是可靠的,具有体积小、投资省等优点,且不需要特别的安装空间。     

四端双量子点系统中的自旋和电荷能斯特效应

基于非平衡态格林函数方法,理论研究了与四个电极耦合的双量子点系统中的自旋和电荷能斯特效应,考虑了不同电极的磁动量结构和量子点内以及量子点间电子的库仑相互作用对热电效应的影响.结果表明铁磁端口中的磁化方向能够有效地调节能斯特效应:当电极1和电极3中的磁化方向反平行排列时,通过施加横向的温度梯度,系统中将会出现纯的自旋能斯特效应;当电极4从普通金属端口转变为铁磁金属端口时,将同时观测到电荷和自旋能斯特效应.研究发现,能斯特效应对于铁磁电极极化强度的依赖程度较弱,但对库仑排斥作用十分敏感.在量子点内和点间库仑排斥作用的影响下,自旋及电荷能斯特系数有望提高两个数量级.     

Adsorption of 2‐amino‐5‐cyanopyridine on a gold surface as probed by surface‐enhanced Raman spectroscopy

The adsorption of 2‐amino‐5‐cyanopyridine (2‐ACP) was investigated in solution at different pH values by i n situ surface‐enhanced Raman scattering (SERS) spectroscopy combined with the electrochemical method. The assignments of the main bands were first performed on the basis of the spectral features of similar compounds and with the help of density functional theory calculations. The results revealed that the adsorption and the interfacial structure of 2‐ACP on the Au electrode depended on the applied potential and the pH values of the solution. In the natural solution, 2‐ACP was adsorbed on the surface with a vertical orientation by the CN group from − 0.4 to − 1.0 V, whereas in the − 0.4 to 0.8 V range, the N atom of the pyridine ring was bound to the surface. A transition region for the reorientation of the two adsorption modes was observed from − 0.8 to − 0.4 V. A flat configuration was preferred at an extremely negative potential. A similar surface adsorption behavior was observed in the alkali environment, while the Stark effect slope decreased because of the adsorption of OH⁻. Due to the protonation of N atom in the acidic solution, the potential region for the coexistence of two configurations ranged from − 0.4 to 0.2 V. Additionally, a similar adsorption configuration was proposed on the Au colloids at various pH values. The results revealed that the adsorption behavior became more complex on colloidal surfaces than that on a rigid electrode surface. Copyright © 2010 John Wiley & Sons, Ltd.     

全气相化学激光体系的直流放电研究

为了提高化学激光体系(AGIL)中F原子的产率，采用直流放电引发方式，对棒式电极的放电特性进行了研究。在对NF3/He混合气体进行解离时，通过选择不同平衡电阻，得到了3 kW左右的放电注入功率。用光谱分析仪对F原子产率进行了测量。通过拟合计算可得:一个NF3分子能够解离出1.3～1.5个F原子。     

KDP晶体中点缺陷Na取代K的电子结构研究

 对磷酸二氢钾(KDP)晶体中Na取代K点缺陷的几何结构及电子结构进行了第一性研究。计算的形成能约为0.46 eV,因此在KDP晶体中此类缺陷比较容易形成。Na取代K以后没有在带隙中形成缺陷态,但在价带中引入两个占据态。它们分别位于费米面以下49 eV和21.5 eV处,这两个占据态分别由Na原子的s和p轨道形成。相对于K来说,由于它们位于价带深处,具有很低的能量,因此Na在KDP中比K稳定。Na在KDP晶体中与周围氧原子的重叠布居仅为0.09, 故它不与主体原子发生共价作用,仅以静电库仑力影响周围原子,此缺陷周围晶格仅发生微小畸变。     

磁化分层等离子体中电磁波传播特性研究

采用混合矩阵法,分析了磁化分层等离子鞘套对斜入射电磁波传播特性的影响,分别计算了不同入射角以及外加磁场下电磁波透射系数和极化特性的变化。以GPS导航信号右旋圆极化波(RCP)为例,研究了磁场、电子密度对电磁波右旋圆极化特性的影响。结果表明,外加磁场能够使右旋圆极化波在等离子体中的阻带向高频方向移动,此外,外加磁场能在一定程度上改善斜入射是圆极化波的极化特性,有利于GPS信号接收。     

Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.     

模式偏置波前传感器理论模拟及实验验证

将模式偏置法与全息多重存储法波前传感器原理联系起来,通过研究模式偏置波前传感器的输出响应特性,间接得到全息模式波前传感器的运行规律.对模式偏置波前传感器进行理论分析与总结,并建立简化模型,针对若干阶Zernike像差,通过数值模拟对理论结果进行验证.模拟结果显示:传感器输出信号与各种类型待测像差系数有不同的变化关系,这...     

利用TEM对Si基片与MgO基片上生长的薄膜特性的研究

对生长在Si和MgO单晶基片上的不同厚度的单层NbN薄膜、双层薄膜AlN/NbN以及三层薄膜NbN/AlN/NbN应用透射电子显微镜(Transmission Electron Microscope,TEM)技术进行了分析研究,对这几种薄膜样品的微观结构、薄膜厚度以及各个边界的一些直观细节给出了较为清晰的图像。由透射电子显微镜的电子衍射图案计算了薄膜和单晶衬底的晶格常数,并与我们以前采用X射线衍射技术分析的结果进行了比较,结果有很好的吻合。