关于Logistic模型的倍周期收敛现象

运用实验和归纳的方法 ,讨论了如何利用 Mathematic数学软件观察 Logistic模型的倍周期收敛现象以及对初值的依赖性 ,并从理论上解释了倍周期收敛现象     

广义线性模型(六)

本讲座是广义线性模型这个题目的一个比较系统的介绍。主要分 3部分 :建模、统计分析与模型选择和诊断。写作时依据的主要参考资料是L .Fahrmeir等人的 :《MultivariateStatisticalModel ingBasedonGeneralizedLinearModles》。     

分布式冷热电三联供系统的单耗分析模型研究

基于"单耗分析"理论,建立了针对燃料为天然气的分布式冷、热、电三联产系统的常见运行模式下的多热源、多冷源的燃料单耗模型和成本单耗模型.利用该模型进行了案例计算,结果清楚地表明了系统各个环节燃料附加单耗的分布.通过对计算结果的分析,得出了一些有益的结论.     

不同地区人发中微量元素的测定与生存环境的比较研究

采用高压密封消化罐对人发样品进行处理,将化学计量学应用于ICP-AES法测定了人头发中20种微量元素的含量。该方法操作简单、快速、灵敏度高,准确性好, 且多元素同时测定,回收率在94.07%～107.60%之间。相对标准偏差小于3.49%。通过对不同地区不同年龄1 600人头发的测定结果,探讨了营养、环境污染等因素对人体健康的影响,从而对其生存环境进行比较研究。     

脉冲电场对木瓜蛋白酶影响的荧光光谱分析

木瓜蛋白酶溶液在电场强度为50 kV·cm-1,频率1 500 Hz,脉冲宽度40 μs的脉冲电场下接受19 800个脉冲处理后,其活性降低了56.5％。文章采用荧光偏光光谱对处理前后的样品进行了分析。 处理后酶样的荧光强度明显大于处理前,在峰值位置其荧光强度增加超过50％,峰位从342 nm移到了346 nm左右,其荧光偏振幅度明显减小。由此推断出木瓜蛋白酶经脉冲电场处理后酶蛋白的α-螺旋结构松散拉伸,分子内部的氨基酸残基暴露于分子表面,并有部分发生离解游离于溶液中,导致活性部位的结构发生变化,最终导致酶失活。     

Inversionless gain enhancing due to Doppler broadening in a closed lambda-type system

An analysis is made of the effect of Doppler broadening on gain without inversion (GWI) from different aspects in a closed lambda-type three-level system with an incoherent pump. It is shown that, regardless of the driving field being on resonance or not, for the counter- or co-propagating of the probe and driving fields (PDF), GWI does not monotonically decrease or increase with increasing Doppler width. Except for the case of counter-propagating PDF with off-resonance driving field, at a suitable Doppler width one can obtain a gain maximum value much larger than that without Doppler broadening; especially in the situation of the resonant driving field, the co-propagating geometry leads to a larger GWI. In addition, for the counter-propagating geometry, when Doppler width is larger enough, GWI oscillation occurs, and the oscillation amplitude and region increase with increasing Doppler width. These conclusions are very different from that obtained in previous investigation (Lukin {\it et al}, {\it Laser Phys.} {\bf 6} 436 (1996)).     

Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates

GaAs （001） substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots （QDs）. InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentiMly nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.     

Lattice Boltzmann Simulation for the Optimized Surface Pattern in a Micro-Channel

Based on the Bhatangar-Gross-Krook （BGK） models, numerical simulation using the lattice Boltzmann model is performed to investigate the optimized surface pattern in a micro-channel. In order to simulate the practical situation correctly, a slip/no-slip boundary condition is applied with making several assumptions. To assess the validity and efficiency of the model, one benchmark problem with considering the surface patterns is studied. Numerical results show the value of rms velocity Vrms increases with the increasing ratio β and larger Reynolds number Re, higher fluctuation of the rms oscillating velocity. Furthermore, the results show that a good mixing effect can be obtained when Re is large enough and the ratio β is about 1.618,which is the appropriate choice, i.e. the well known golden section phenomenon.     

Further Acceleration of MeV Electrons by a Relativistic Laser Pulse

With the development of photocathode rf electron gun, electrons with high-brightness and mono-energy can be obtained easily. By numerically solving the relativistic equations of motion of an electron generated from this facility in laser fields modelled by a circular polarized Gaussian laser pulse, we find the electron can obtain high energy gain from the laser pulse. The corresponding acceleration distance for this electron driven by the ascending part of the laser pulse is much longer than the Rayleigh length, and the light amplitude experienced on the electron is very weak when the laser pulse overtakes the electron. The electron is accelerated effectively and the deceleration can be neglected. For intensities around 10¹⁹ W•μm²/cm², an electron's energy gain near 0.1 GeV can be realized when its initial energy is 4.5 MeV, and the final velocity of the energetic electron is parallel with the propagation axis. The energy gain can be up to 1 GeV if the intensity is about 10²¹ W•μm²/cm². The final energy gain of the electron as a function of its initial conditions and the parameters of the laser beam has also been discussed.     

下电极对ZnO薄膜电阻开关特性的影响

本文采用直流磁控溅射法在三种不同的下电极(BEs)上制备了ZnO薄膜, 获得了W/ZnO/BEs存储器结构. 研究了不同的下电极材料对器件电阻开关特性的影响. 研究结果表明, 以不同下电极所制备的器件都具有单极性电阻开关特性. 在低阻态时, ZnO薄膜的导电机理为欧姆传导, 而高阻态时薄膜的导电机理为空间电荷限制电流. 不同下电极与ZnO薄膜之间的肖特基势垒高度对电阻开关过程中的操作电压有较大的影响, 并基于导电细丝模型对不同下电极上ZnO薄膜的低阻态阻值及reset电流的变化进行了解释. 关键词： ZnO薄膜 电阻开关 下电极