基于像散与理想光源成像原理的高亮度半导体激光器光纤耦合设计方法

运用像散原理和理想光源成像原理,讨论了半导体激光器消像散设计.提出了一种基于消像散的高亮度半导体激光器光纤耦合系统的设计方法.以波长为808 nm,输出功率为10 W的半导体激光器的光纤耦合为例,给出了详细的计算方法和设计步骤.结果表明:采用该方法将半导体激光器光束耦合入数值孔径为0.22,芯径为50 μm的光纤中,耦...     

Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.     

湍动雾化射流液雾粒径分布的数值模拟

对水在空气中湍动雾化射流的气液两相流场进行了数值模拟.其中,气体流场采用k-ε湍流模型进行模拟,给出了载气轴向速度的分布情况.对喷雾粒子的运动采用颗粒轨道法,建立粒子破碎和碰撞的数值模型,研究了液雾粒径在不同工况下沿轴向的变化趋势.数值模拟结果与实验结果在多种气液比下进行了比较,两者吻合较好.同时,分析了初始粒径和粒子总数及喷嘴尺寸对液雾粒径变化趋势的影响,讨论了有助于粒径均匀分布的条件.     

缓释片中新斯的明的含量测定

采用紫外分光光度法测定新斯的明缓释片中新斯的明的含量及对其稳定性进行研究。结果表明,新斯的明浓度在80—560μg.mL-1范围内与吸光度呈良好的线性关系,回归方程为：A=0.0016C-0.0089,r=0.9999;平均回收率为100.46%,RSD为0.89%（n=9）。该法简便、快速,重现性好,结果准确可靠。     

不同对流马赫数下光束畸变的实验研究

利用双曝光CCD相机成像技术,研究了小直径光束穿越可压缩混合层流场后所引起的气动光学效应.实验研究结果表明:在不同对流马赫数(Mc=0.17,0.45)下,光束投影(点扩散函数,PSF)发生了不同程度的变形和偏移.此外在不同对流马赫数下细光束投影都存在扩束、缩束和面积几乎不变的现象,但光束投影出现扩、缩束的概率不同.     

高压增氧T′相R_2CuO_(4+δ)(R=Nd～Tm)低温磁性研究

T′相R2CuO4稀土铜氧化合物由于尺度效应而产生弱铁磁性行为已经被人们关注,报导了通过高温高氧压(6GPa,1000℃)合成稀土T′相R2CuO4(R=Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er和Tm)化合物的结构和磁学性能。磁化率曲线显示,在低温下所有的高压增氧R2CuO4样品都出现新的低温弱铁磁性反常行为,转变温度在28K附近。新的低温弱铁磁性行为是由于CuO2面上微量氧空穴的掺入,使处于反铁磁有序CuO2面形成局域化的铁磁性团簇造成。实验证明新发现的低温弱铁磁性行为与尺度效应产生弱铁磁性行为属于完全不同的物理机制。结果还预示T′相R2CuO4稀土铜氧化合物很难通过空穴掺杂而实现超导。     

一种新型的稀土Tb配合物的光致和电致发光性能的研究

用一种新型的含酚羟基的Schiff碱三足配体H₃L3稀土Tb配合物作发光层制备了三层结构电致发光器件,器件在正向直流偏压下发出明亮的绿光。器件的电致发光(EL)光谱和Tb配合物薄膜的光致发光(PL)光谱与典型的Tb配合物的发光光谱相同。研究了器件发光及电学特性,讨论了该种新型的稀土Tc配合物的发光机理。     

磁控溅射制备ZnO薄膜的受激发射特性的研究

用射频磁控反应溅射法在二氧化硅衬底上制备ZnO薄膜。得到了在不同温度下ZnO薄膜的吸收与光致发光。观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;室温 (30 0K)下 ,PL谱中仅有自由激子发光峰。这些结果证实了ZnO薄膜具有较高的质量。探讨了变温ZnO薄膜的发光特性。研究了ZnO薄膜的受激发射特性。     

A Monte Carlo Study of Carrier Distribution in Yba2Cu3O7.

A Monte Carlo simulation has been carried out on the carrier distribution in the Ba-O plane of Yba₂Cu₃O₇, where the O-2p_z orbitals perpendicular to the plane are strongly hybridized with 3d_z² orbitals in adjacent Cu planes, while the in-plane O-2p_z and O-2p_y orbitals, which are nonbonding with respect to the Cu-3d orbitals, form two nearly degenerate subbands. The degeneracy is removed by the distortion of the lattice. A tight-binding Hamiltonian is constructed for such a coupled electronlattice system and the Monte Carlo simulation is made for a sample containing 35×35 unit cells with periodic boundary condition at various temperatures. Although the total number of carriers is fixed, the results show approximately a linear temperature dependence of in-plane hole density, and this is in good agreement with the Hall effect measurements. The distortion of the lattice is found to exhibit random character with some short range order. The relations to the other transport properties and to other superconducting oxides, especially the Nd-Ce-Cu-O systems, are also discussed.