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991.
Parametric X-ray Radiation (PXR) can be used as a novel, quasi-monochromatic energy-tunable and high-yield X-ray source. It is produced at the Bragg angle by a relativistic electron beam passing through the periodic structure of crystal materials. This article concerns the PXR experiment using low energy electrons (10 MeV) from NCEL (Novel Compact Electron-Linac). The difficulty of the experiment is to distinguish the PXR photons form the background. The design of the experiment relies mainly on the yield of PXR, the Bremsstrahlung background of the X-rays and the capability of the detector. 相似文献
992.
Bulk工艺气体微网探测器的研究 总被引:1,自引:0,他引:1
In this paper, we present a study of a micromegas detector prototype built with bulk technology. Following a short discussion of the micromegas detector's structure and working mechanism, the bulk fabrication process is described, and some testing results of the prototype are presented. 相似文献
993.
We analyze the radiative leptonic Bc decay Bc^-→τ^vτ^-γ in the Standard Model and the two- Higgs-doublet model using the non-relativistic constituent quark model. The results confirm that this channel is experimentally promising in view of the large number of Bc mesons which are expected to be produced at future hadron facilities. We also find that this decay is sensitive to the parameters of the two-Higgs-doublet model, and it can be tested in future experiments. 相似文献
994.
The transverse mass distributions of protons produced in Au-Au collisions at 8 A GeV and Pb-Pb collisions at 158 A GeV are calculated by using the Monte Carlo method in the framework of the multisource ideal gas model.It is found that our calculated results are in agreement with the experimental data in nucleusnucleus collisions at high energies. 相似文献
995.
Investigation of the Potts Model on Triangular Lattices by the Second Renormalization of Tensor Network States
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We employ the second renormalization group method of tensor-network states to investigate thermodynamic properties of the ferromagnetic and antiferromagnetic Potts model on triangular lattices. From the temperature dependence of the internal energy and the specific heat, both the critical temperatures and critical exponents are evaluated. For the q = 3 antiferromagnetic Potts model, the critical temperature is found to be Tc = 0.627163±0.000003, which is at least one order of magnitude more accurate than that obtained by other methods. 相似文献
996.
We propose a new application of the optical adiabatic passage effect for the excitation of a thermal atomic beam, which will be used in the calcium active optical clock to produce population inversion. A comparison between the optical adiabatic passage effect and the Rabi π pulse is investigated, 99% of the calcium atoms in the atomic beam that has a wide velocity distribution will be excited to the upper state for population inversion using the adiabatic passage, while 76% at most will be excited to the excited state using the π pulse with suitable parameters. 相似文献
997.
As a direct result of Mei symmetry of the Ténoff equation for non-holonomic mechanical systems, another conserved quantity is studied. The expression and the determining equations of the above conserved quantity are also presented. Using this method, it is easier to find out conserved quantity than ever. In the last, an example is presented to illustrate applications of the new results. 相似文献
998.
Fabrication and Properties of Double-Side Tl2Ba2CaCu2O8 Thin Film on CeO2 Buffered Sapphire Substrate
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The double-side Tl2Ba2 CaCu2O8 (Tl-2212) superconducting thin films were fabricated on CeO2 buffered sapphire substrates. The reactive magnetron sputtering technique was used to grow CeO2 buffer thin films on sapphire substrates. Making use of the metal cerium as a sputtering source, the depositing rate is much higher compared with the CeO2 target. The Ti-2212 thin films on CeO2 buffered sapphire substrates were fabricated by adc magnetron sputtering and post-annealing process. The x-ray diffraction indicates that the thin film is pure Tl-2212 phase with the e-axis perpendicular to the substrate surfaces, and epitaxially grown on the CeO2 buffered sapphire. The critical transition temperature Tc is around 106K, the critical current density Jc is around 3.5 MA/cm^2 at 77K, and the microwave surface resistance R8 at 77K and 10 CHz of the film is as low as 390μ Ω. 相似文献
999.
Coupled THz Waveguide Utilizing Surface Plasmon Polaritons on Thin Dielectric Slab Sandwiched between Two Corrugated Metallic Claddings
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We present a comprehensive experimental study of terahertz (THz) wave propagation utilizing surface plasmon polaritons (SPPs) on the interfaces of a thin dielectric core layer sandwiched between two corrugated metallic claddings. THz wave impinges on the structured surfaces at normal incidence. Long-lasting oscillation propagation features are observed in the temporal waveform after traveling through the periodic arrays. The enhanced THz transmission can be achieved due to the coupling between incident waves to SPPs at the bottom and top interfaces. The finite element method is used to simulate the field distribution and the transmission mode in the waveguide. The hybrid waveguide with low absorption has great potential applications in THz integrated devices. 相似文献
1000.
Numerical Study on Open-Circuit Voltage of Single Layer Organic Solar Cells with Schottky Contacts: Effects of Molecular Energy Levels, Temperature and Thickness
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We numerically investigate the effects of the exciton generation rate G, temperature T, the active layer thickness d and the position of LUMO level EL related to the cathode work function Wc at a given energy gap on the opencircuit voltage Voc of single layer organic solar cells with Schottky contact. It is demonstrated that open-circuit voltage increases concomitantly with the decreasing cathode work function Wc for given anode work functions and exciton generation rates. In the case of given cathode and anode work functions, the open-circuit voltage first increases with the exciton generation rate and then reaches a saturation value, which equals to the builtin voltage. Additionally, it is worth noting that a significant improvement to Voc could be made by selecting an organic material which has a relative high LUMO level (low |EL| value). However, Voc decreases as the temperature increases, and the decreasing rate reduces with the enhancement of exeiton generation rate. Our study also shows that it is of no benefit to improve the open-circuit voltage by increasing the device thickness because of an enhanced charge recombination in thicker devices. 相似文献