基于PXI总线的阵列探测器数据获取系统

描述了一种适用于阵列探测器的数据获取系统。系统基于PXI总线, 采用标准NIM插件作为前端电子学。系统软件采用C/C++语言编写, 在线分析通过调用ROOT类库实现, 系统运行在Linux操作系统下。多次测试结果表明, 系统稳定可靠, 单个ADC通道可以处理的最大事例率为40 kHz。A data acquisition system for array detectors is described. The system is based on PXI bus with standard NIM modules used as front\|end electronics. The system software is written in C/C++ language with its online analysis modules realized by ROOT class library. Several runs of the system under Linux show that it is reliable and is capable of handling event rates up to 40 k events/s for 1 ADC channel.     

基于可见与近红外光谱联用的柑桔黄龙病快速无损检测研究

黄龙病是柑桔果树的毁灭性病害,对柑桔产业危害巨大。基于模型平均理论,探讨联用可见与近红外光谱技术,提高柑桔黄龙病快速无损检测精度的可行性。采集记录柑桔叶片的可见与近红外光谱,经实时荧光定量PCR鉴别黄龙病叶片为轻度、中度和重度三类,缺素和正常样品也经PCR鉴定,共五类叶片。基于光谱直接拼接、光谱归一化拼接和模型平均三种不同策略,结合偏最小二乘判别分析(PLS-DA)和多元线性回归(MLR)方法,分别建立了柑桔黄龙病可见与近红外光谱联用无损检测模型。经比较发现,光谱联用模型的检测精度均高于可见或近红外单一检测模型,且经导数处理后的光谱直接拼接PLS-DA模型检测精度最高,模型预测相关系数为0.97,预测均方根误差为0.67,模型总误判率为3%,其原因是导数消除了光谱的基线漂移。光谱归一化拼接的PLS-DA模型检测精度次之,模型总误判率为7%。可见与近红外模型平均的检测精度最低,模型总误判率为7.2%。实验结果表明,联用可见与近红外光谱,结合光谱拼接方法,提高了柑桔黄龙病无损检测模型的检测精度,研究可为其他领域的光谱联用提供参考依据。     

离体龋齿的光热锁相成像检测试验

牙齿龋损是人类一种广泛存在的口腔疾病,如何能够尽早的发现早期龋齿,对患者牙齿龋损的预防与治疗具有重要意义。介绍了基于光热效应的光热锁相热成像技术,光热锁相热成像技术具有无损伤、高效率及探测面积大等优势被广泛应用于各类材料的无损检测。基于光热锁相热成像技术原理对人为模拟龋损的人类离体牙齿组织进行成像检测试验研究。首先开展了对不同模拟龋损位置离体牙齿的光热锁相成像试验,采用防酸指甲油对牙齿组织测试面进行开窗受控龋损(开窗大小为5 mm×5 mm),其中模拟龋损部位分别选择在牙齿组织的邻接面及牙颌面。试验结果显示,牙齿组织模拟龋损位置热波幅值增大,相位滞后增大且光热锁相成像的幅值图与相位图与X射线成像相比对模拟龋损部位表现出高敏感及高特异性;光热锁相成像技术对邻接面龋损比牙颌面龋损具有较高特异性。其次开展了对平滑面牙齿组织样本的多天(0,1,2,4及6 d)模拟龋损光热锁相成像跟踪试验研究,牙齿组织龋损程度采用X射线方法进行量化。试验结果表明,当龋损时间小于6 d时,X射线方法无法对龋损位置进行有效识别,而采用光热锁相热成像技术检测模拟龋损1 d的牙齿组织时,幅值差为3.82,相位差为10.57°,证明光热锁相热成像方法对牙齿组织龋损具有较高敏感性。提取的光热锁相成像幅值与相位与龋损时间具有良好的相关性。     

盐酸托哌酮的NMR研究

应用1D NMR和脉冲梯度场2D NMR技术深入研究盐酸托哌酮的溶液结构,对其¹H和¹³C NMR化学位移进行全归属,并讨论其立体化学.     

二氢黄酮类化合物的核磁共振碳谱模拟研究

采用表征分子内部化学微环境的结构描述子原子电负性作用矢量(Atomic Electronegativity Interaction Vector, AEIV)对255个共振碳原子进行了结构表征,应用多元线性回归技术建立了结构描述子AEIV与这些碳原子的¹³C NMR化学位移的定量相关模型.该定量结构谱图关系(定量构谱关系/QSSR)模型的复相关系数达到R_MM=0.915,标准偏差为SD_MM=14.879. 采用留一法交互检验的结果为R_CV=0.909,SD_CV=15.324. 结果表明,模型具有良好的估计力和稳定性.     

Beam dynamics studies of the photo-injector in low-charge operation mode for the ERL test facility at IHEP

The energy recovery linac test facility （ERL-TF）, which is a compact ERL-FEL （free electron laser） two-purpose machine, was proposed at the Institute of High Energy Physics, Beijing. As one important component of the ERL-TF, the photo-injector that started with a photocathode direct-current gun has been designed. In this paper, optimization of the injector beam dynamics in low-charge operation mode is performed with iterative scans using Impact-T. In addition, the dependencies between the optimized beam quality and the initial offset at cathode and element parameters are, investigated. The tolerance of alignment and rotation errors is also analyzed.     

落葵中硝酸盐、维生素C及胡萝卜素含量的研究

对野生落葵不同生长发育阶段所含的硝酸盐、维生素C及胡萝卜素进行了测定和分析,并将野生落葵和人工栽培落葵所含的以上成分进行了比较.结果表明,落葵富含胡萝卜素,维生素C含量中等,野生落葵硝酸盐含量较低,人工栽培落葵硝酸盐含量比野生落葵高出近1倍,须经煮熟后方可安全食用.     

两种铽配合物与PVK混合体系的发光机理研究

研究了稀土配合物Tb(p-MBA)₃phen(样品Ⅰ)和Tb(p-ClBA)₃phen(样品Ⅱ)与导电聚合物材料PVK掺杂体系的光致发光和电致发光特性。发现在样品Ⅰ与PVK混合薄膜的光致发光中,除了三价铽离子的发光外,还能看到明显的PVK的发光;而在电致发光中,PVK的发光完全被抑制,只能看到Tb3+的绿光发射。对样品Ⅱ与PVK的混合发光层,无论其光致发光谱还是电致发光谱,都没有看到410 nm处PVK的发射。进一步测量两种材料的激发光谱,初步探讨了器件的发光机理。样品Ⅰ的发光可能来源于两个方面,一是PVK到稀土配合物的不完全的能量传递,二是由于载流子俘获机理;样品Ⅱ的发光则是由于PVK到稀土配合物的完全的能量传递。     

Bounce-Averaged Acceleration of Energetic Electrons by Whistler Mode Chorus in the Magnetosphere

We construct the bounce-averaged diffusion coefficients and study the bounce-averaged acceleration for energetic electrons in gyroresonance with whistler mode chorus. Numerical calculations have been performed for a band of chorus frequency distributed over a standard Gaussian spectrum specifically in the region near L = 4.5, where peaks of the electron phase space density occur. It is found that whistler mode chorus can efficiently accelerate electrons and can increase the phase space density at energies of about 1 MeV by more than one order of magnitude about one day, in agreement with the satellite observations during the recovery phase of magnetic storms.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.