对"求解线性规划问题的一种全搜索方法"的改进与修正

本对[1]、[2]提出的全搜索方法作了若干必要的改进与修正，从而使之更完善、更简捷、更有效。     

CSR电子冷却段磁场造成闭轨畸变及校正

电子冷却的应用提高了重离子储存环的束流品质, 也为重离子储存环的运行带来了新的课题. 电子冷却段的横向磁场在引导约束强流电子束的同时也不可避免影响了多次经过的离子轨道. 为了保证束流的安全运行, 必须将离子轨道的畸变部分限制在局部范围, 并保证轨道畸变量对储存环接收度的影响可以容忍. 讨论在建的兰州重离子储存环HIRFL-CSR电子冷却段磁场及其造成闭轨畸变和校正方案.     

HIRFL–CSRm Betatron振荡随机冷却

对拟在HIRFL CSRm上建造的横向自由振荡随机冷却进行了数值优化计算和设计,得到了最佳带宽、冷却时间、频谱上束流谱密度分布函数随时间的变化,以及在冷却过程中束流横向位移的分布等值,并且对功率限定情况作了讨论,从而为冷却系统的设计、优化、建造和运行提供了理论依据     

A Method for Determining the Phase Transition Point of the Bose-Einstein Condensation by Judging the Fitting Errors

In this paper, We demonstrate an approach to determine the phase transition point and critical temperature of Bose-Einstein condensation. During the fitting sequence of time-of-flight images, for just one picture we take four kinds of different calculations instead of only one. By calculating the quantitative least-square errors, which have always been neglected before, we find out that this value can act as a criterion to judge the status of atom clouds. Using this criterion, we can not only discriminate the status around the phase transition point, but can also find the critical point precisely. Also with this method, we can achieve the totally automatical running of calculating programs without human＇s judgments.     

关于融资收缩现象成因的一个模型解释

本通过构建一个关于企业融资与经济增长的理论模型对融资收缩形成的内在机理进行了揭示。     

积分第二中值定理“中间点”的渐近性

给出了在各种情况下积分第二中值定理“中间点”的渐近性的几个结论 ,相信在积分学中有着很重要的作用 .     

中国汽车保险的最优索赔策略

在大多数国家,汽车保险中使用的无索赔奖励系统(BMS)只考虑了索赔次数,而我国2006年7月开始实施的A、B、C三个车险条款中的C条款是与索赔额有关的BMS,所以需要对现有的最优索赔策略模型进行推广。本文应用马尔科夫最优化原理推广了汽车保险的最优索赔策略模型,并对我国现行的三个车险条款的最优索赔策略问题进行了实证研究。     

外推法测定半导体材料的折射率

利用半导体激光器，根据菲涅耳公式及折射定律，测量了部分半导体材料的复折射率的实数部分．     

具等式约束的最优性一阶条件研究

本把Botsko于1986年首先提出的关于多元函数f(x)于点x^#取极小值的一阶充分条件加以改进，并推广到具有等式约束的情形。得到的若干成果将为解决经济优化问题提供方便。     

EFFECTIVE-MASS THEORY FOR InAs/GaAs STRAINED SUPERLATTICES

By using the recently developed exact effective-mass envelope function theory, the electronic structures of InAs/GaAs strained superlattices grown on GaAs (100) oriented substrates are studied. The electron and hole subband structures, distribution of electrons and holes along the growth direction, optical transition matrix elements, exciton states, and absorption spectra are calculated. In our calculations, the effects due to the different effective masses of electrons and holes in different materials and the strain are included. Our theoretical results are in agreement with the available experimental data.