宽带Ⅱ-Ⅵ族半导体及其低维结构的生长和光学性质研究进展

本文系自1979年以来，宽带Ⅱ-Ⅵ族半导体研究组取得的主要研究成果的简要介绍。取得的主要研究成果可分为如下六个方面：第一，系统地研究了宽带Ⅱ-Ⅵ族半导体在电场激发下的自由激子发射；第二，创造性地提出并实 利用宽带Ⅱ-Ⅵ族超晶格的室温激子效应来实现在蓝绿区快响应的光学双稳的物理思想；第三，深入研究了宽带Ⅱ-Ⅵ族超晶格中的激子行为以及激子与元激发态的相互作用，为利用激子获得有效蓝色自发和受激发射提供物理基础和实验途径；第四，研究了ZnSe基非对称双量子阱和组合超晶格中激子的隧穿以及激子的自发和受激发射；第五，CdSe和ZnSeS自组装量子点的生长及其形成机理；第六，ZnO薄膜的生长及其紫外发射特性。     

Piezoelectric activities and domain patterns of orthorhombic Ba(Zr,Ti)O3 ceramics

Ba(Zr_xTi_1?x)O₃ (0.025 ≤ x ≤ 0.065) ceramics were prepared by conventional solid-state reaction method. Crystalline structures were analyzed by X-ray diffraction. It was shown that all the Ba(Zr_xTi_1?x)O₃ (0.025 ≤ x ≤ 0.065) ceramics were of orthorhombic phase at room temperature. Piezoelectric activities and domain patterns were investigated and compared with those of BaTiO₃ ceramic. All the Ba(Zr_xTi_1?x)O₃ ceramics showed nearly the same d₃₃ values of about 265 pC/N and the same domain width of about 220 nm. By comparing the grain sizes and domain width of the Ba(Zr_xTi_1?x)O₃ ceramics with those of BaTiO₃ ceramic, it is speculated that the variation of domain width with grain sizes in orthorhombic Ba(Zr_xTi_1?x)O₃ ceramics may be different with that in tetragonal BaTiO₃ ceramic. Besides domain width, the effective inertia mass of domain wall is also considered to be a very important factor that impacts the piezoelectric activities of the Ba(Zr_xTi_1?x)O₃ ceramics.     

Effect of TiO2 addition on the crystallization of quenched glasses in the SiO2–Al2O3–ZrO2 system

The glass formation in the SiO₂-rich region of the ternary oxide system Al₂O₃–ZrO₂–SiO₂ with MgO, CaO, and TiO₂ as melting aids was analyzed. The crystallization of glasses with different content of TiO₂ and phase evolution with the temperature was studied by X-ray diffraction, infrared, laser Raman spectroscopy and transmission electron microscopy. The use of TiO₂ favored formation and crystallization of the glasses due to the decrease of the viscosity of melts and acting as a nucleating agent. The crystalline phase of t-ZrO₂ was developed at temperatures as low as 880°C whereas in as prepared specimens without TiO₂ its presence was not detected. For the specimens with TiO₂, t-ZrO₂ and mullite were the principal phases at 1000°C. TiO₂ addition did not change the crystallization sequence but decreased the formation temperature of the crystalline phases. Most of Ti⁴⁺ ions entered into t-ZrO₂ and only a small portion in mullite, but the surplus was detected in ZrTiO₄.     

Structure-based interpretation of the Strouhal-Reynolds number relationship

The wake in the flow past a circular cylinder has posed a long-standing challenge to scientists since the late 19th century. Many aspects of this seemingly simple phenomenon remain unexplained. Of particular interest is the relationship between the dimensionless vortex shedding frequency (the Strouhal number St) and the ratio of inertial to viscous forces in the fluid (the Reynolds number Re). We propose a new St-Re relation based on the observations of the structure of a vortex street in flowing soap films. The measurements suggest a simple two-parameter form St=1/(A+B/Re) that describes laminar vortex shedding remarkably well for bulk fluids as well as for two-dimensional flowing soap films.     

Origin and manifestation of the anharmonic potential felt by an ion-cloud in an actual Paul trap

The anharmonic potential felt by a single-species ions confined in a rf quadrupole trap which results from a non-ideal trap configuration and the charge distribution of the ion cloud is studied. The rf resonance-absorption spectra are explained by a Duffing oscillator and a representation of the line-shape parameter is derived. For > 0.77, the electric signals will exhibit hysteresis. The relation with the anharmonic potential is discussed.     

Full wave electromagnetic simulation of electrooptic high-speed probes

This paper outlines the process of modelling external electrooptic probes mounted on coplanar waveguides (CPW). The techniques used to describe the electromagnetic properties of the external probes are the finite difference time domain (FDTD) method and the finite difference transmission line method (FDTLM). These full wave techniques are time domain in nature that must be Fourier transformed to describe important frequency domain characteristics such as scattering parameters. The optical retardation of the probe is related to the full wave analysis through a commonly used grid size that results in a generalized basis for a complete electrooptic system analysis including a unique definition of an electrooptic transfer function,H(). Following the field simulation, the properties of the probe (invasiveness, retardation, signal distortion and group delay) are presented. Procedures for optimizing models for probe tips are discussed and related to a first-order model that has been developed. The results indicate that these probes can be simulated successfully on moderately sized Unix work stations and that the optimization of probe models must include the full wave simulation in the definition of the necessary gradients for the optimization process.     

First observation of yrast band in odd-odd162Lu

High spin states of the odd-odd¹⁶²Lu nucleus have been studied via¹⁴⁷Sm(¹⁹F,4nγ)¹⁶²Lu reaction at 95 MeV beam energy. Level scheme for yrast band based onπ[h_11/2 v[i_13/2] quasiparticle configuration was established up to I ^π = (23^?) for the first time. This band shows the signature inversion in energy before backbending generally appeared in this mass region. It is stressed that the signature splitting in¹⁶²Lu is larger than that in the¹⁶⁰Tm nucleus.     

Diode-pumped passively Q-switched Nd:YAG/SrWO4 intracavity Raman laser with high pulse energy and average output power

A diode-pumped passively Q-switched Nd:YAG/SrWO₄ intracavity Raman laser is presented. As high as 1.78?W average power is obtained at an incident pump power of 14.9?W with a pulse repetition frequency of 21.2?kHz. The highest pulse energy is 88.1???J obtained at a pump power of 13.7?W. The obtained pulse energy and average power are much higher than those of the previously reported diode-pumped passively Q-switched intracavity Raman lasers.     

Zn_（1－x）Mg_xS_ySe_（1－y）四元半导体合金的拉曼散射光谱研究

用分子束外延方法在ＧａＡｓ（１００）衬底上生长了Ｚｎ１－ｘＭｇｘＳｙＳｅ１－ｙ四元半导体合金薄膜．用Ｘ－射线衍射方法确定了外延层的结构和晶格常数．测量了这些样品在平行和垂直两种不同几何配置下的拉曼散射光谱并对其特性做了研究。从实验上观察到了四类不同的晶格振动模：类ＺｎＳｅ的ＴＯ和ＬＯ模以及类ＺｎＳ和类ＭｇＳ的ＬＯ模，实验发现：在ＺｎＳｅ和ＺｎＳＳｅ中加入Ｍｇ使得类ＺｎＳｅ的ＴＯ和ＬＯ模的振动频率下降；同时，也使类ＺｎＳ模的频率随Ｓ的增加率减小。