Preparation of epitaxial compositionally graded (Ba1-xSrx)TiO3 thin films with enhanced dielectric properties

Epitaxial compositionally graded (Ba_1-xSr_x)TiO₃ (BST) (0.0x0.25) thin films were deposited on (100) LaAlO₃ substrates by pulsed laser ablation, the substrates having bottom electrodes made of 100-nm-thick conductive La_0.5Sr_0.5CoO₃ (LSCO). Extensive X-ray diffraction, rocking-curve, and -scan studies indicate that the graded films are (100)-oriented and exhibit good in-plane relationships of [010]_BST//[010]_LAO and [001]_BST//[001]_LAO. For the up-graded films with barium concentration (1-x) increasing across the film thickness in the direction from the film/substrate interface to the film surface, the full width at half maximum of the BST film (200) rocking curve and the surface roughness, examined by atomic force microscopy, were larger than those of the down-graded films with barium concentration decreasing from the film/substrate interface to the film surface. The dielectric properties of the graded films, measured using vertical structures, show that at room temperature, the dielectric constant (_r) and dissipation factor (cos) at 100 kHz were 380 and 0.013 for the up-graded films, and 650 and 0.010 for the down-graded films, respectively. The dielectric behavior was enhanced in the down-graded films, which was attributed to the fact that the pure BaTiO₃ layer in the down-graded BST films not only serves as a bottom layer but also acts as an excellent seeding layer for enhancing subsequent film growth, leading to better film crystallinity and larger grain sizes in the down-graded films. The graded BST films undergo a diffuse phase transition, giving a broad, flat capacitance-versus-temperature profile. With such a graded structure, it is possible to build a dielectric thin-film capacitor having a capacitance which has a low temperature dependence over a broad temperature regime. PACS 77.55.+f; 68.55.Jk; 81.15.Fg     

Photon tunneling in a frustrated total internal reflection structure with a lossy indefinite metamaterial barrier

We study the phenomenon of photon tunneling through a frustrated total internal reflection structure with a dispersive lossy indefinite metamaterial barrier. The tunneling coefficient, lateral shift, and tunneling time for different incident light waves through the barrier are obtained by employing the stationary-phase approximation. The properties of tunneling time and lateral shift are discussed for different metamaterial parameters. It is shown that negative lateral shift and tunneling time can appear in the cutoff and always cutoff metamaterials. The lateral shift can be enhanced by adjusting the light frequency, the barrier thickness, and the permittivity or permeability of the indefinite metamaterial. In addition, it is found that the lateral shift can be resonantly amplified due to the weak loss of the indefinite metamaterial slab. The Hartman effects of the lateral shift and tunneling time are also demonstrated. PACS 42.50.Ct; 42.25.Bs; 73.43.Jn; 73.40.Gk; 42.70.Qs     

Enhanced Efficiency of Polymer Light-Emitting Diodes by Dispersing Dehydrated Nanotube Titanic Acid in the Hole-buffer Layer

Efficiency of polymer light-emitting diodes (PLEDs) with poly(2-methoxy-5-(2-ethyl hexyloxy)-p-phenylene vinylene) (MEH-PPV) as an emitting layer was improved if a dehydrated nanotubed titanic acid (DNTA) doped hole-buffer layer polyethylene dioxythiophene (PEDOT) was used. Photoluminescence (PL) and Raman spectra indicated a stronger interaction between DNTA and sulfur atom in thiophene of PEDOT, which suppresses the chemical interaction between vinylene of MEH-PPV and thiophene of PEDOT. The interaction decreases the defect states in an interface region to result in enhancement in device efficiency, even though the hole transporting ability of PEDOT was decreased.     

Dielectrophoretically aligned GaN nanowire rectifiers

We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15 V_p–p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2–1.5 V at a current density of 200 A/cm². We observed that the GaN NW diode functioned well as a half-wave rectifier. PACS 71.20.Nr; 73.40.Cg; 73.40.Ei; 73.40.Kp     

Study of N = 16 for Ne isotopes

²⁷Ne has been investigated through the one neutron transfer reaction ²⁶Ne(d,p)²⁷Ne in inverse kinematics at 9.7 MeV/nucleon. The results support the existence of a low lying negative parity state in ²⁷Ne which is a signature of a reduced sd-fp shell gap in the N = 16 neutron rich region, at variance with stable nuclei.     

Electron spin resonance from annealed titania nanotubes

Titania nanotubes were prepared using a hydrothermal method. Hydrogen titanate nanotubes (H-TNTs) with an anatase phase changed to anatase nanocrystals at about 500 °C, and then a rutile structure at ∼800 °C. A sharp and symmetrical electron spin resonance (ESR) signal (g=2.003), attributed to a single-electron-trapped oxygen-vacancy (SETOV), was obtained at the annealed H-TNTs (T<500 °C). The SETOV signal increased and maximized remarkably at about 400–500 °C. Then, the nanotube structure appeared to be demolished. Yet, when the vacuum-heated H-TNTs were sealed in N₂ or Ar ambient, some additional ESR signals appeared besides the SETOV signal. The broad asymmetric ESR signal (g=1.98) was attributed to a surface oxygen vacancy related to the Ti³⁺ sites in a reduced TiO₂ matrix. The vacuum-heated sodium titanate nanotubes (Na-TNTs) showed only the SETOV signal (T<500 °C). PACS 61.46.Fg; 61.72.Ji; 76.30.-v     

Tunable negative refraction by electro-optical control in two-dimensional photonic crystal

This paper describes a simple hydrothermal procedure for high-yield synthesis of single-crystalline ZnO hexagonal nanoplates in a surfactant-free system at 70 °C. The structures and morphologies of the synthesized ZnO nanoplates are derived from characterisation by X-ray diffraction, and scanning and transmission electron microscopy. Their optical properties are recorded by Raman and photoluminescence spectroscopy. These ZnO hexagonal nanoplates exhibit the enhanced photocatalytic activity of phenol photodecomposition, suggesting that they could be served as an active system for the treatment of the waste water, in addition to their common applications. PACS 81.10.Dn; 61.10.Nz; 68.37.Hk; 78.55.Hx     

Influence of cholesterol on the bilayer properties of monounsaturated phosphatidylcholine unilamellar vesicles

The influence of cholesterol on the structure of unilamellar-vesicle (ULV) phospholipid bilayers is studied using small-angle neutron scattering. ULVs made up of short-, mid- and long-chain monounsaturated phospholipids (diCn :1PC, n = 14 , 18, 22, respectively) are examined over a range (0-45mol %) of cholesterol concentrations. Cholesterol's effect on bilayer structure is characterized through changes to the lipid's transmembrane thickness, lateral area and headgroup hydration. For all three lipids, analysis of the experimental data shows that the addition of cholesterol results in a monotonic increase of these parameters. In the case of the short- and mid-chain lipids, this is an expected result, however, such a finding was unexpected for the long-chain lipid. This implies that cholesterol has a pronounced effect on the lipid's hydrocarbon chain organization.     

Fiber-optic ring-down spectroscopy using a tunable picosecond gain-switched diode laser

Visible and near-infrared laser light pulses were coupled into two different types of optical fiber cavities. One cavity consisted of a short strand of fiber waveguide that contained two identical fiber Bragg gratings. Another cavity was made using a loop of optical fiber. In either cavity ∼40 ps laser pulses, which were generated using a custom-built gain-switched diode laser, circulated for a large number of round trips. The optical loss of either cavity was determined from the ring-down times. Cavity ring-down spectroscopy was performed on 200 pL volumes of liquid samples that were injected into the cavities using a 100 μm gap in the fiber loop. A detection limit of 20 ppm of methylene blue dye in aqueous solution, corresponding to a minimum absorptivity of εC<6 cm^-1, was realized. PACS 42.62.Fi; 42.81.-i     

Stress evolution influenced by oxide charges on GaN metal–organic chemical vapor deposition on silicon-on-insulator substrate

GaN epilayers have been deposited on silicon-on-insulator (SOI) and bulk silicon substrates. The stress transition thickness and the initial compressive stress of a GaN epilayer on the SOI substrate are larger than those on the bulk silicon substrate, as shown in in situ stress measurement results. It is mainly due to the difference of the three-dimensional island density and the threading dislocation density in the GaN layer. It can increase the compressive stress in the initial stage of growth of the GaN layer, and helps to offset the tensile stress generated by the lattice mismatch. PACS 81.15.Gh