Nucleation and Growth Synthesis of Siloxane Gels to Form Functional,Monodisperse, and Acoustically Programmable Particles

Nucleation and growth methods offer scalable means of synthesizing colloidal particles with precisely specified size for applications in chemical research, industry, and medicine. These methods have been used to prepare a class of silicone gel particles that display a range of programmable properties and narrow size distributions. The acoustic contrast factor of these particles in water is estimated and can be tuned such that the particles undergo acoustophoresis to either the pressure nodes or antinodes of acoustic standing waves. These particles can be synthesized to display surface functional groups that can be covalently modified for a range of bioanalytical and acoustophoretic sorting applications.     

Generation of strong, homochiral bases by electrochemical reduction of phenazine derivatives

Electrochemical reduction of enantiomerically pure amino- and alkoxy-phenazine derivatives forms strongly basic radical anions which give asymmetric induction in the conversion of 3,4-epoxytetrahydrothiophene-1,1-dioxide into the allylic ester with facile regeneration of the phenazine.     

Synthesis and Characterization of Tris(diethyldithiocarbamato) cobalt(III) as an Undergraduate Inorganic Laboratory

The synthesis of tris(diethyldithiocarbamato) cobalt(III) by the reaction of sodium diethyldithio-carbamate and cobaltous chloride is described. The recovered crystals of the cobalt complex are characterized by magnetic susceptibility, IR and NMR spectroscopy, and cyclic voltammetry.     

An extremal problem for total domination stable graphs upon edge removal

A connected graph is total domination stable upon edge removal, if the removal of an arbitrary edge does not change the total domination number. We determine the minimum number of edges required for a total domination stable graph in terms of its order and total domination number.     

Characterization of silicon nanowires grown on silicon, stainless steel and indium tin oxide substrates

Silicon nanowires (SiNWs) have been grown on crystalline silicon (Si), indium tin oxide (ITO) and stainless steel (SS) substrates using a gold catalyst coating with a thickness of 200 nm via pulsed plasma-enhanced chemical vapor deposition (PPECVD). Their morphological, mineralogical and surface characteristics have been investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman analysis. SiNWs growth is accompanied by oxidation, thus yielding partially (SiO _x ) and fully oxidized (SiO₂) Si sheaths. The mean diameters of these SiNWs range from 140 to 185 nm. Si with (111) and (220) planes exists in SiNWs grown on all three substrates while Si with a (311) plane is detected only for Si and ITO substrates. Computational simulation using density functional theory (DFT) has also been conducted to supplement the experimental Raman analyses for crystalline Si and SiO₂. XPS results reveal that ca. 30 % of the SiNWs have been oxidized for all substrates. The results presented in this paper can be used to aid selection of appropriate substrates for SiNW growth, depending on specific applications.     

Pulsed laser damage of proustite

Pulsed laser damage thresholds have been measured for proustite (Ag₃ As S₃) as the wavelengths 0.694, 1.065, 1.32 and 10.6 μm. The damage thresholds have been found to vary with both the wavelength and duration of the irradiating pulse. At 1.065 μm damage thresholds are 0.38 J/cm² for pulses of duration <50 ns whilst for durations >50 ns a value of 7 MW/cm² is appropriate. The results suggest that damage is initiated by absorbing inclusions approximately 0.6 μm in diameter embedded within the crystals. These inclusions are heated by an incident pulse to cause catastrophic damage of both the surface and interior of an irradiated sample. A model has been developed to enable a study of the thermal behaviour of inclusions irradiated by laser pulses with Gaussian time-dependence to be made.