Development of an integrated optical system for warpage and hermeticity test of microdisplay

We have developed an integrated optical system to measure the warpage of a microdisplay product at post-packaging die-attach temperature and to test its hermeticity after manufacturing. This system is constructed based on the principle of Twyman/Green (T/G) interferometry and Newton interferometry. T/G interferometry is used to characterize warpage of the microdisplay's base-plate, while Newton interferometry is used to characterize the gap variance between face-plate and base-plate of the microdisplay. With these measurements, deformation and shape of the microdisplay can be comprehensively determined during its manufacturing process, which is critical for its quality test and reliability evaluation. Delicate mechanical system was designed to facilitate the optics integration and alignment. To evaluate the performance of the optical system itself, warpage of a sample was re-measured with Tailor–Hobson profilometer whose resolution is 10 nm, the results from these two testing systems agree well with each other. Some application examples of the integrated testing system were presented to verify its work efficiency.     

Optimally chosen Nakajima–Zwanzig master equation for mean field approximation

We define an ensemble of projection operators, each of which has an exact associated Nakajima–Zwanzig master equation for quantum open system evolution. A mean field approximation for the memory kernels is introduced that yields a completely determined inhomogeneous master equation for every projection operator. A specific projection operator is then chosen so that the master equation optimally matches an abstract mathematical form which preserves positivity, complete positivity, and correctly equilibrates. We study a nitrogen vacancy center in diamond interacting with ¹³C impurities to illustrate the method.     

Excellent passivation of thin silicon wafers by HF‐free hydrogen plasma etching using an industrial ICPECVD tool

In this work, hydrogen plasma etching of surface oxides was successfully accomplished on thin (～100 µm) planar n‐type Czochralski silicon wafers prior to intrinsic hydrogenated amorphous silicon [a‐Si:H(i)] deposition for heterojunction solar cells, using an industrial inductively coupled plasma‐enhanced chemical vapour deposition (ICPECVD) platform. The plasma etching process is intended as a dry alternative to the conventional wet‐chemical hydrofluoric acid (HF) dip for solar cell processing. After symmetrical deposition of an a‐Si:H(i) passivation layer, high effective carrier lifetimes of up to 3.7 ms are obtained, which are equivalent to effective surface recombination velocities of 1.3 cm s^–1 and an implied open‐circuit voltage (V_oc) of 741 mV. The passivation quality is excellent and comparable to other high quality a‐Si:H(i) passivation. High‐resolution transmission electron microscopy shows evidence of plasma‐silicon interactions and a sub‐nanometre interfacial layer. Using electron energy‐loss spectroscopy, this layer is further investigated and confirmed to be hydrogenated suboxide layers. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Interaction of the mu-opioid receptor with GPR177 (Wntless) inhibits Wnt secretion: potential implications for opioid dependence

Background  

Opioid agonist drugs produce analgesia. However, long-term exposure to opioid agonists may lead to opioid dependence. The analgesic and addictive properties of opioid agonist drugs are mediated primarily via the mu-opioid receptor (MOR). Opioid agonists appear to alter neuronal morphology in key brain regions implicated in the development of opioid dependence. However, the precise role of the MOR in the development of these neuronal alterations remains elusive. We hypothesize that identifying and characterizing novel MOR interacting proteins (MORIPs) may help to elucidate the underlying mechanisms involved in the development of opioid dependence.     

Atomic and Electronic Structures of Traps in Silicon Oxide and Silicon Oxynitride

Silicon oxide (SiO₂) and silicon oxynitride (SiO_xN_y) are two key dielectrics used in silicon devices. The excellent interface properties of these dielectrics with silicon have enabled the tremendous advancement of metal-oxide-semiconductor (MOS) technology. However, these dielectrics are still found to have pronounced amount of localized states which act as electron or hole traps and lead to the performance and reliability degradations of the MOS integrated circuits. A better understanding of the nature of these states will help to understand the constraints and lifetime performance of the MOS devices. Recently, due to the available of ab initio quantum-mechanical calculations and some synchrotron radiation experiments, substantial progress has been achieved in understanding the atomic and electronic nature of the defects in these dielectrics. In this review, the properties, formation and removal mechanisms of various defects in silicon oxide and silicon oxynitride films will be critically discussed. Some remarks on the thermal ionization energies in connection with the optical ionization energies of electron and hole traps, as well as some of the unsolved issues in these materials will be highlighted.     

Growth of strongly textured FeCO 3 thin films for application in research of nuclear quantum optics with ultrashort-pulsed laser deposition

Growth of strongly textured $\mathrm{FeCO}_{3}$ thin films on substrates was achieved with ultrashort-pulsed laser deposition using 810-nm, 46-fs ablation pulses. The crystallinity and composition were verified with X-ray diffraction and Raman spectroscopy. Using Mössbauer spectroscopy, it is shown that the deposited $\mathrm{FeCO}_{3}$ thin films possess the film quality required for application in research of nuclear quantum optics. It is found that a relatively low substrate temperature is crucial for growing a strongly textured film of $\mathrm{FeCO}_{3}$ while avoiding decomposition of $\mathrm{FeCO}_{3}$ into $\mathrm{Fe}_{2}\mathrm{O}_{3}$ and $\mathrm{CO}_{2}$ . This supports the importance of the use of ultrashort-pulsed laser deposition in providing adatoms with high mobility for attaining good crystallinity. The surface morphology was characterized by surface profilometry, scanning electron microscopy and atomic force microscopy. It is found to be significantly affected by changing the ablation laser parameters, including laser fluence, pulse duration, and on-target spot size. The results show that the peak deposition flux must be below approximately 0.03 nm/pulse in order to grow a flat film.