Papieruntersuchung

Analytical and Bioanalytical Chemistry -     

Photoluminescence linewidth broadening due to alloy/thickness fluctuation of CdxZn1 − xSe/ZnSe triple quantum wells

Photoluminescence (PL) linewidth broadening of Cd_xZn_{1 − x}Se/ZnSe triple quantum wells, grown on GaAs substrates by molecular beam epitaxy (MBE), has been investigated. Various quantum well (QW) samples have been prepared with different QW thickness and composition (Cd-composition). Measured and calculated PL linewidth are compared. Both composition and thickness fluctuations are considered for the calculation with the parameters such as the volume of exciton, nominal thickness and composition of QWs. Surface roughness measured by atomic force microscopy (AFM) is used to estimate the interface roughness. Results show that when Cd-composition increases additional linewidth broadening due to Zn/Cd interdiffusion is enhanced.     

Zero Dissipative, Explicit Numerov-Type Methods for Second Order IVPs with Oscillating Solutions

New explicit, zero dissipative, hybrid Numerov type methods are presented in this paper. We derive these methods using an alternative which avoids the use of costly high accuracy interpolatory nodes. We only need the Taylor expansion at some internal points then. The method is of sixth algebraic order at a cost of seven stages per step while their phase lag order is fourteen. The zero dissipation condition is satisfied, so the methods possess an non empty interval of periodicity. Numerical results over some well known problems in physics and mechanics indicate the superiority of the new method.