Schottky barrier and pn-junctionI/V plots — Small signal evaluation

This paper proposes and examines three different plots for the determination of the saturation current, the ideality factor, and the series resistance of Schottky diodes and solar cells from the measurement of a single current (I)/voltage(V) curve. All three plots utilize the small signal conductance and avoid the traditional Norde plot completely. A test reveals that the series resistance and the barrier height of a test diode can be determined with an accuracy of better than 1%. Finally it is shown that a numerical agreement between measured and fittedI/V curves is generally insufficient to prove the physical validity of current transport models.     

Siliceous spicules in marine demosponges (example Suberites domuncula)

All metazoan animals comprise a body plan of different complexity. Since--especially based on molecular and cell biological data--it is well established that all metazoan phyla, including the Porifera (sponges), evolved from a common ancestor the search for common, basic principles of pattern formation (body plan) in all phyla began. Common to all metazoan body plans is the formation of at least one axis that runs from the apical to the basal region; examples for this type of organization are the Porifera and the Cnidaria (diploblastic animals). It seems conceivable that the basis for the formation of the Bauplan in sponges is the construction of their skeleton by spicules. In Demospongiae (we use the model species Suberites domuncula) and Hexactinellida, the spicules consist of silica. The formation of the spicules as the building blocks of the skeleton, starts with the expression of an enzyme which was termed silicatein. Spicule growth begins intracellularly around an axial filament composed of silicatein. When the first layer of silica is made, the spicules are extruded from the cells and completed extracellularly to reach their the final form and size. While the first steps of spicule formation within the cells are becoming increasingly clear, it remains to be studied how the extracellularly present silicatein strings are formed. The understanding of especially this morphogenetic process will allow an insight into the construction of the amazingly diverse skeleton of the siliceous sponges; animals which evolved between two periods of glaciations, the Sturtian glaciation (710-680 MYA) and the Varanger-Marinoan ice ages (605-585 MYA). Sponges are--as living fossils--witnesses of evolutionary trends which remained unique in the metazoan kingdom.     

Near-IR photoluminescence from Si/Ge nanowire-grown silicon wafers: effect of HF treatment

We present the room-temperature near-infrared (NIR) photoluminescence (PL) properties of Si/Ge nanowire (NW)-grown silicon wafers which were treated by vapor of HF:HNO₃ chemical mixture. This treatment activates or enhances the PL intensity in the NIR region ranging from 1000 nm to 1800 nm. The PL consists of a silicon band-edge emission and a broad composite band which is centered at around 1400–1600 nm. The treatment modifies the wafer surface particularly at defect sites especially pits around NWs and NW surfaces by etching and oxidation of Si and Ge. This process can induce spatial confinement of carriers where band-to-band (BB) emission is the dominant property in Si-capped strained Si/Ge NW-grown wafers. Strong signals were observed at sub-band-gap energies in Ge-capped Si/Ge NW-grown wafers. It was found that NIR PL is a competitive property between the Si BB transition and deep-level emission, which is mainly attributable to Si-related defects, Ge dots and strained Ge layers. The enhancement in BB and deep-level PL is discussed in terms of strain, oxygen-related defects, dot formation and carrier-confinement effects. The results demonstrate the effectiveness of this method in enhancing and tuning NIR PL properties for possible applications.     

Metastable phase in the quantum Hall ferromagnet

Time-dependent capacitance measurements reveal an unstable phase of electrons in gallium arsenide quantum well that occurs when two Landau levels with opposite-spin are brought close to degeneracy by applying a gate voltage. This phase emerges below a critical temperature and displays a peculiar non-equilibrium dynamical evolution. The relaxation dynamics is found to follow a stretched-exponential behaviour and correlates with hysteresis loops observed by sweeping the magnetic field. These experiments indicate that metastable randomly distributed magnetic domains with peculiar excitations are involved in the relaxation process in a way that is equivalently tunable by a change in gate voltage or temperature.     

Diode laser frequency stabilisation for water-vapour differential absorption sensing

We describe a low-power continuous-wave laser system for water-vapour sensing applications in the 935-nm region. The system is based on extended-cavity diode lasers and distributed-feedback lasers and delivers four single-mode frequency-stabilised optical signals. Three lasers are locked to three water-vapour absorption lines of different strengths, whereas the fourth lies outside any absorption line. On-line stabilisation is performed by wavelength-modulation spectroscopy using compact water-vapour reference cells. An offset-locking technique implemented around an electrical filter is applied for the stabilisation of the off-line slave laser to an on-line master laser at a frequency detuning of 18.8 GHz. Stabilities in the order of 15 MHz over one day were observed for the strongest lines, at the detection limit of the measurement instrumentation. The developed techniques and schemes can be applied to other wavelength ranges and molecular species. Differential absorption lidar instrumentation can in particular benefit from such a system when the stabilised lasers serve as injection seeders to pulsed power oscillators. PACS 42.62.Fi; 42.72.-g; 42.68.Wt     

Growth and decay of the Pd(1 1 1)-Pd5O4 surface oxide: Pressure-dependent kinetics and structural aspects

Growth and decomposition of the Pd₅O₄ surface oxide on Pd(1 1 1) were studied at sample temperatures between 573 and 683 K and O₂ gas pressures between 10⁻⁷ and 6 × 10⁻⁵ mbar, by means of an effusive O₂ beam from a capillary array doser, scanning tunnelling microscopy (STM) and thermal desorption spectrometry (TDS). Exposures beyond the p(2 × 2)O adlayer (saturation coverage 0.25) at 683 K (near thermodynamic equilibrium with respect to Pd₅O₄ surface oxide formation) lead to incorporation of additional oxygen into the surface. To initiate the incorporation, a critical pressure beyond the thermodynamic stability limit of the surface oxide is required. This thermodynamic stability limit is near 8.9 × 10⁻⁶ mbar at 683 K, in good agreement with calculations by density functional theory. A controlled kinetic study was feasible by generating nuclei by only a short O₂ pressure pulse and then following further growth kinetics in the lower (10⁻⁶ mbar) pressure range.Growth of the surface oxide layer at a lower temperature (573 K) studied by STM is characterized by a high degree of heterogeneity. Among various metastable local structures, a seam of disordered oxide formed at the step edges is a common structural feature characteristic of initial oxide growth. Further oxide nucleation appears to be favoured along the interface between the p(2 × 2)O structure and these disordered seams. Among the intermediate phases one specifically stable phase was detected both during growth and decomposition of the Pd₅O₄ layer. It is hexagonal with a distance of about 0.62 nm between the protrusions. Its well-ordered form is a superstructure.Isothermal decay of the Pd₅O₄ oxide layer at 693 K involves at first a rearrangement into the structure, indicating its high-temperature stability. This structure can break up into small clusters of uniform size and leaves a free metal surface area covered by a p(2 × 2)O adlayer. The rate of desorption increases autocatalytically with increasing phase boundary metal-oxide. We propose that at close-to-equilibrium conditions (693 K) surface oxide growth and decay occur via this intermediate structure.     

In situ XPS study of Pd(1 1 1) oxidation. Part 1: 2D oxide formation in 10 mbar O2

The oxidation of the Pd(1 1 1) surface was studied by in situ XPS during heating and cooling in 3 × 10⁻³ mbar O₂. A number of adsorbed/dissolved oxygen species were identified by in situ XPS, such as the two dimensional surface oxide (Pd₅O₄), the supersaturated O_ads layer, dissolved oxygen and the R 12.2° surface structure.Exposure of the Pd(1 1 1) single crystal to 3 × 10⁻³ mbar O₂ at 425 K led to formation of the 2D oxide phase, which was in equilibrium with a supersaturated O_ads layer. The supersaturated O_ads layer was characterized by the O 1s core level peak at 530.37 eV. The 2D oxide, Pd₅O₄, was characterized by two O 1s components at 528.92 eV and 529.52 eV and by two oxygen-induced Pd 3d_5/2 components at 335.5 eV and 336.24 eV. During heating in 3 × 10⁻³ mbar O₂ the supersaturated O_ads layer disappeared whereas the fraction of the surface covered with the 2D oxide grew. The surface was completely covered with the 2D oxide between 600 K and 655 K. Depth profiling by photon energy variation confirmed the surface nature of the 2D oxide. The 2D oxide decomposed completely above 717 K. Diffusion of oxygen in the palladium bulk occurred at these temperatures. A substantial oxygen signal assigned to the dissolved species was detected even at 923 K. The dissolved oxygen was characterised by the O 1s core level peak at 528.98 eV. The “bulk” nature of the dissolved oxygen species was verified by depth profiling.During cooling in 3 × 10⁻³ mbar O₂, the oxidised Pd²⁺ species appeared at 788 K whereas the 2D oxide decomposed at 717 K during heating. The surface oxidised states exhibited an inverse hysteresis. The oxidised palladium state observed during cooling was assigned to a new oxide phase, probably the R 12.2° structure.