19.4%‐efficient large‐area fully screen‐printed silicon solar cells

We demonstrate industrially feasible large‐area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 × 125 mm² p‐type 2–3 Ω cm boron‐doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen‐printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic‐layer‐deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of S_rear = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved J_sc of up to 38.9 mA/cm² and V_oc of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full‐area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen‐printed solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Direct construction of a cubic selfinteraction for higher spin gauge fields

Using Noether's procedure we directly construct a complete cubic selfinteraction for the case of spin s=4$s=4$ in a flat background and discuss the cubic selfinteraction for general spin s with s derivatives in the same background. The leading term of the latter interaction together with the leading gauge transformation of first field order are presented.     

Out of the blue: semiconductor laser pumped visible rare‐earth doped lasers

The rise of semiconductor‐based pump sources such as In_xGa_1‐xN‐laser diodes or frequency‐doubled optically pumped semiconductor lasers with emission wavelengths in the blue encourages a revisitation of the rare‐earth ions Pr³⁺, Sm³⁺, Tb³⁺, Dy³⁺, Ho³⁺ and Er³⁺ with respect to their properties as active ions in crystalline solid‐state laser materials with direct emission in the visible spectral range. Nowadays, some of these blue‐pumped visible lasers compete with Nd³⁺‐lasers in terms of efficiency and direct lasing at various colors from the cyan‐blue to the deep red can be addressed in very simple and compact laser setups. This paper highlights the spectroscopic properties of suitable rare‐earth ions for visible lasing and reviews the latest progress in the field of blue‐pumped visible rare‐earth doped solid‐state lasers.

     

Tuning protonation states of tripelennamine antihistamines by cucurbit[7]uril

The formation of host–guest complexes of cucurbit[7]uril (CB7) with the antihistamine drug tripelennamine (TRP) was studied by optical and NMR spectroscopy. The experimental and computational results are consistent with inclusion of a single TRP molecule in CB7. Addition of CB7 has tuned drug protonation states associated with (de)protonation of the ethyldimethylammonium and exocyclic nitrogens with an increase in the associated pK_a values by 1.5 and 2.5 units, respectively. The incorporation of antihistamines drugs such as TRP in cucurbiturils could be utilized for switching their capability for selective binding to histamine H₁‐receptors, in the future. Copyright © 2015 John Wiley & Sons, Ltd.     

Model based prediction of the trap limited diffusion of hydrogen in post‐hydrogenated amorphous silicon

The diffusion of hydrogen within an hydrogenated amorphous silicon (a‐Si:H) layer is based on a trap limited process. Therefore, the diffusion becomes a self‐limiting process with a decreasing diffusion velocity for increasing hydrogen content. In consequence, there is a strong demand for accurate experimental determination of the hydrogen distribution. Nuclear resonant reaction analysis (NRRA) offers the possibility of a non‐destructive measurement of the hydrogen distribution in condensed matter like a‐Si:H thin films. However, the availability of a particle accelerator for NRR‐analysis is limited and the related costs are high. In comparison, Fourier transform infrared spectroscopy (FTIR) is also a common method to determine the total hydrogen content of an a‐Si:H layer. FTIR spectrometers are practical table‐top units but lack spatial resolution. In this study, an approach is discussed that greatly reduces the need for complex and expensive NRR‐analysis. A model based prediction of hydrogen depth profiles based on a single NRRA measurement and further FTIR measurements enables to investigate the trap limited hydrogen diffusion within a‐Si:H. The model is validated by hydrogen diffusion experiments during the post‐hydrogenation of hydrogen‐free sputtered a‐Si. The model based prediction of hydrogen depth profiles in a‐Si:H allows more precise design of experiments, prevents misinterpretations, avoids unnecessary NRRA measurements and thus saves time and expense. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Interfaces in ionic devices

The technology of Ionics is based on the availability of materials with fast ion transport. Individual materials are, however, meaningless from a practical point of view; all applications require combinations of materials with appropriate ionic and electronic properties. This situation is similar to Electronics which requires combinations of semi-conducting or metallic conducting materials with differences in the chemical potentials of the electrons. The technology of Ionics requires interfaces between ionic and electronic conductors which generate strong electrical fields or allow to modify the field by the application of external voltages. Ions and electrons equilibrate both at these “ionic junctions”. While semi-conductor junctions have commonly a width in the μm-range, the space charge region is several orders of magnitude smaller in the case of ionic junctions, i.e. in the nm or even sub-nm-range. The interfaces have to be chemically stable for the lifetime of the device which is difficult to achieve in view of the commonly large number of components present in both phases and the existence of mobile species with sometimes large variations in the activity of the electroactive component. Furthermore, the kinetics of transfer of ions across the interface has to be fast to allow high current densities which are required in many cases. In addition, two such interfaces are required to convert the electronic current into an ionic one and again back into an electronic current at the opposite side of the electrolyte. The development of ionic devices depends to the strongest extent on the engineering of appropriate interfaces. Examples of the role and engineering of interfaces will be presented for applicationes such as chemical sensors, electrochromic devices, fuel cells, batteries and photogalvanic solar cells.