首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   299156篇
  免费   3658篇
  国内免费   1042篇
化学   161850篇
晶体学   4073篇
力学   13527篇
综合类   13篇
数学   31940篇
物理学   92453篇
  2020年   2121篇
  2019年   2198篇
  2018年   2504篇
  2017年   2487篇
  2016年   4501篇
  2015年   3241篇
  2014年   4574篇
  2013年   13099篇
  2012年   10290篇
  2011年   13004篇
  2010年   8456篇
  2009年   8569篇
  2008年   11942篇
  2007年   11967篇
  2006年   11393篇
  2005年   10537篇
  2004年   9425篇
  2003年   8202篇
  2002年   8118篇
  2001年   9338篇
  2000年   7154篇
  1999年   5517篇
  1998年   4465篇
  1997年   4474篇
  1996年   4220篇
  1995年   3893篇
  1994年   3743篇
  1993年   3487篇
  1992年   4010篇
  1991年   4079篇
  1990年   3652篇
  1989年   3670篇
  1988年   3628篇
  1987年   3449篇
  1986年   3297篇
  1985年   4636篇
  1984年   4727篇
  1983年   3863篇
  1982年   4164篇
  1981年   3950篇
  1980年   3868篇
  1979年   3975篇
  1978年   4157篇
  1977年   4005篇
  1976年   4020篇
  1975年   3886篇
  1974年   3866篇
  1973年   3934篇
  1972年   2431篇
  1971年   1968篇
排序方式: 共有10000条查询结果,搜索用时 31 毫秒
101.
102.
103.
104.
105.
In this work, we have used the MuMax3 software to simulate devices consisting of a ferromagnetic thin film placed over a heavy metal thin film. The devices are two interconnected partial-disks where a Néel domain wall is formed in the disks junction. In our simulations we investigate devices with disk radius r=50 nm and different distance d between the disks centers (from d=12 nm to d=2R=100 nm). By applying strong sinusoidal external magnetic fields, we find a mechanism able to create, annihilate and even manipulate a skyrmion in each side of the device. This mechanism is discussed in terms of interactions between skyrmion and domain wall. The Néel domain wall formed in the center of the device interacts with the Néel skyrmion, leading to a process of transporting a skyrmion from one disk to the other periodically. Our results have relevance for potential applications in spintronics such as logical devices.  相似文献   
106.
Dudkin  F.A. 《Archiv der Mathematik》2020,114(2):129-134
Archiv der Mathematik - A generalized Baumslag–Solitar group is a finitely generated group that acts on a tree with infinite cyclic edge and vertex stabilizers. A group G is residually a...  相似文献   
107.
108.
In this work, a series of 2-chalcogenylindoles was synthesized by an efficient methodology, starting from chalcogenoalkynes, including a previously unreported tellurium indole derivative. For the first time, these 2-substituted chalcogenylindoles were obtained in the absence of metal catalyst or base, under thermal conditions only. In addition, the results described herein represent a methodology with inverse regioselectivity for the chalcogen functionalization of indoles.  相似文献   
109.
Nonlinear Dynamics - The main purpose of this paper is to study both the underdamped and the overdamped dynamics of the nonlinear Helmholtz oscillator with a fractional-order damping. For that...  相似文献   
110.
Hybrid materials in which reduced graphene oxide (rGO) is decorated with Au nanoparticles (rGO–Au NPs) were obtained by the in situ reduction of GO and AuCl4?(aq) by ascorbic acid. On laser excitation, rGO could be oxidized as a result of the surface plasmon resonance (SPR) excitation in the Au NPs, which generates activated O2 through the transfer of SPR‐excited hot electrons to O2 molecules adsorbed from air. The SPR‐mediated catalytic oxidation of p‐aminothiophenol (PATP) to p,p′‐dimercaptoazobenzene (DMAB) was then employed as a model reaction to probe the effect of rGO as a support for Au NPs on their SPR‐mediated catalytic activities. The increased conversion of PATP to DMAB relative to individual Au NPs indicated that charge‐transfer processes from rGO to Au took place and contributed to improved SPR‐mediated activity. Since the transfer of electrons from Au to adsorbed O2 molecules is the crucial step for PATP oxidation, in addition to the SPR‐excited hot electrons of Au NPs, the transfer of electrons from rGO to Au contributed to increasing the electron density of Au above the Fermi level and thus the Au‐to‐O2 charge‐transfer process.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号