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A low specific on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is proposed and investigated by simulation.The MOSFET features a recessed drain as well as dual gates,which consist of a planar gate and a trench gate extended to the buried oxide layer(BOX)(DGRD MOSFET).First,the dual gates form dual conduction channels,and the extended trench gate also acts as a field plate to improve the electric field distribution.Second,the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path.Third,the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions.All of these sharply reduce Ron,sp and maintain a high breakdown voltage(BV).The BV of 233 V and Ron,sp of 4.151 mΩ·cm2(VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch.Compared with the trench gate SOI MOSFET and the conventional MOSFET,Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV,respectively.The trench gate extended to the BOX synchronously acts as a dielectric isolation trench,simplifying the fabrication processes. 相似文献
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Kubo K Akemoto M Anderson S Aoki T Araki S Bane KL Blum P Corlett J Dobashi K Emma P Frisch J Fukuda M Guo Z Hasegawa K Hayano H Higo T Higurashi A Honda Y Iimura T Imai T Jobe K Kamada S Karataev P Kashiwagi S Kim E Kobuki T Kotseroglou T Kurihara Y Kuriki M Kuroda R Kuroda S Lee T Luo X McCormick DJ McKee B Mimashi T Minty M Muto T Naito T Naumenko G Nelson J Nguyen MN Oide K Okugi T Omori T Oshima T Pei G Potylitsyn A Qin Q Raubenheimer T Ross M Sakai H Sakai I Schmidt F Slaton T Smith H 《Physical review letters》2002,88(19):194801
Electron beams with the lowest, normalized transverse emittance recorded so far were produced and confirmed in single-bunch-mode operation of the Accelerator Test Facility at KEK. We established a tuning method of the damping ring which achieves a small vertical dispersion and small x-y orbit coupling. The vertical emittance was less than 1% of the horizontal emittance. At the zero-intensity limit, the vertical normalized emittance was less than 2.8 x 10(-8) rad m at beam energy 1.3 GeV. At high intensity, strong effects of intrabeam scattering were observed, which had been expected in view of the extremely high particle density due to the small transverse emittance. 相似文献
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通过对19个酚类化合物1H NMR谱的研究和分析发现,酚羟基形成分子内氢键后,使对位芳氢化学位移值向高场变化的幅度大于邻位,其差值约为0.1ppm-0.3ppm. 相似文献
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Pei?WangEmail author 《The European Physical Journal B - Condensed Matter and Complex Systems》2013,86(12):494
We present the numerical excitation operator method for studying the real time dynamicsof a small interacting quantum system coupled to a non-interacting fermionic reservoir byiteratively solving the Heisenberg equation of motion with the help of excitationoperators. We apply this method to the decoherence dynamics of the single impurityAnderson model in the Kondo regime with a non-Markovian reservoir. We take full account ofthe environmental back-action and the electron-electron interaction, and find that thecoexistence of the strong electron-electron interaction and a non-Markovian reservoirinduces the coherence ringings, which will be suppressed by either driving the system awayfrom the particle-hole symmetric point or changing the reservoir into a Markovian one. 相似文献
80.
Baixing Liu Xianqiang Pei Qihua Wang Tingmei Wang Xiaojun Sun 《Journal of Macromolecular Science: Physics》2013,52(11):2245-2254
Effects of atomic oxygen (AO) irradiation on the structural and tribological behaviors of polytetrafluoroethylene (PTFE) composites filled with both glass fibers and Al2O3 were investigated in a ground-based simulation facility, in which the average energy of AO was about 5 eV and the flux was 5.0 × 1015/cm2 s. It was found that AO irradiation first induced the degradation of PTFE molecular chains on the sample surface, and then resulted in a change of surface morphology. The addition of Al2O3 filler significantly increased the AO resistance property of PTFE composites. Friction and wear tests indicated that AO irradiation affected the wear rate and increased the friction coefficient of specimens. The PTFE composite containing 10% Al2O3 exhibit the best AO resistance and lower wear rate after long time AO irradiation. 相似文献