Thermal conductance for single wall carbon nanotubes

We report a theoretical analysis of the phonon thermal conductance, κ(T), for single wall carbon nanotubes (SWCN). In a range of low temperatues up to 100 K, κ(T) of perfect SWCN is found to increase with temperature, approximately, in a parabolic fashion. This is qualitatively consistent with recent experimental measurements where the tube-tube interactions are negligibly weak. When the carbon-carbon bond length is slightly varied, κ(T) is found to be qualitatively unaltered which implies that the anharmonic effect does not change the qualitative behavior of κ(T). Received 12 June 2001     

Bianchi type I inflationary universe in general relativity

In this paper, we have investigated Bianchi type I inflationary universe in the presence of massless scalar field with a flat potential. To get an inflationary solution, we have considered a flat region in which potential V is constant. The inflationary scenario of the model is discussed in detail.     

Flicker noise in degenerately doped Si single crystals near the metal-insulator transition

In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10⁻²<f<4 × 10¹ Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor.     

Metastability and Low Lying Spectra¶in Reversible Markov Chains

We study a large class of reversible Markov chains with discrete state space and transition matrix P _N . We define the notion of a set of metastable points as a subset of the state space Γ _N such that (i) this set is reached from any point x∈Γ _N without return to x with probability at least b _N , while (ii) for any two points x, y in the metastable set, the probability T ^{− 1} _{x , y} to reach y from x without return to x is smaller than a _{N − 1}< b _N . Under some additional non-degeneracy assumption, we show that in such a situation: (i) To each metastable point corresponds a metastable state, whose mean exit time can be computed precisely. (ii) To each metastable point corresponds one simple eigenvalue of 1 −P _N which is essentially equal to the inverse mean exit time from this state. Moreover, these results imply very sharp uniform control of the deviation of the probability distribution of metastable exit times from the exponential distribution. Received: 1 August 2000 / Accepted: 19 November 2001     

Controlling global stochasticity of Hamiltonian systems by nonlinear perturbation

A method of controlling global stochasticity in Hamiltonian systems by applying nonlinear perturbation is proposed. With the well-known standard map we demonstrate that this control method can convert global stochasticity into regular motion in a wide chaotic region for arbitrary initial condition, in which the control signal remains very weak after a few kicks. The system in which chaos has been controlled approximates to the original Hamiltonian system, and this approach appears robust against small external noise. The mechanism underlying this high control efficiency is intuitively explained. Received 15 January 2002 Published online 6 June 2002     

MAFF — The Munich accelerator for fission fragments

At the new high flux reactor FRM-II in Munich the accelerator MAFF (Munich accelerator for fission fragments) is under design. In the high neutron flux of 10¹⁴ n/cm² s up to 10¹⁴ neutron-rich fission fragments per second are produced in the 1 g U-235 target. Ions with an energy of 30 keV are extracted from the ion source. In the mass separator two isotopes can be selected. One of the beams is used for low energy experiments, the other one is injected into an ECRIS (or EBIS) for charge breeding to a q/A≥0.16. A gas filled RFQ cooler is used for emittance improvement. The subsequent LINAC delivers beams with an energy ranging from 3.7 MeV/u to 5.9 MeV/u. New IH structures are being developed at the Munich tandem laboratory. A small storage ring is planned in a further stage to recycle the fission fragments. A thin target foil can be placed into this ring, e.g., for synthesis of super-heavy elements. The through-going beam tube has been installed in the heavy water tank of the reactor. Tests of the target ion source in a special oven to test long term stability and safety tests were in progress.     

The operational performance of the Yale ESTU

The ESTU began operation in 1988 and achieved the design voltage of 20 MV in 1990. Since that time, improvements to the gas handling system, negative ion injector, accelerator terminal and control system have greatly increased its capability and reliability. Today, the ESTU can efficiently produce an extensive assortment of stable ions at wide-ranging energies in support of low-energy nuclear physics.     

Riemannian Geometry of Quantum Groups¶and Finite Groups with Nonuniversal Differentials

We construct noncommutative “Riemannian manifold” structures on dual quasitriangular Hopf algebras such as ℂ _q [SU ₂] with its standard bicovariant differential calculus, using the quantum frame bundle approach introduced previously. The metric is provided by the braided-Killing form on the braided-Lie algebra on the tangent space and the n-bein by the Maurer–Cartan form. We also apply the theory to finite sets and in particular to finite group function algebras ℂ[G] with differential calculi and Killing forms determined by a conjugacy class. The case of the permutation group ℂ[S ₃] is worked out in full detail and a unique torsion free and cotorsion free or “Levi–Civita” connection is obtained with noncommutative Ricci curvature essentially proportional to the metric (an Einstein space). We also construct Dirac operators in the metric background, including on finite groups such as S ₃. In the process we clarify the construction of connections from gauge fields with nonuniversal calculi on quantum principal bundles of tensor product form. Received: 22 June 2000 / Accepted: 26 August 2001     

Visions: The coming revolutions in particle physics

We study the branching ratio, CP-violating asymmetry, forward-backward asymmetry and the CP-violating asymmetry in the forward-backward asymmetry for the exclusive decay B → Kτ⁺τ⁻ in the two Higgs doublet model with tree level flavor changing neutral currents (model III). We analyse the dependencies of these quantities on the neutral Higgs boson contributions and the CP parameter sinθ in the model III. We observe that to determine the neutral Higgs boson effects, the measurements of the forward-backward asymmetry and the CP-violating asymmetry in the forward-backward asymmetry for the decay B → Kτ⁺τ⁻ are promising.     

载流子迁移率对单层有机发光二极管复合效率的影响

建立了在单层有机发光二极管中电场强度不太大(E≤104Vcm)的情况下,载流子注入、传输和复合的理论模型.通过求解非线性Painleve方程得出了电场强度随坐标变化的解析函数关系式以及电流密度随电压变化关系,给出了电流密度以及器件的复合效率在不同的载流子迁移率情况下随电压变化关系图像.结果表明,复合效率受载流子迁移率影响较大,在器件中多数载流子应具有较低的迁移率,而少数载流子应具有较高的迁移率,这样有利于载流子的注入和传输,从而可提高发光效率.并且得出当空穴迁移率大于电子迁移率时,复合区域偏向阴极,反之亦 关键词： 单层有机发光二极管 复合效率 迁移率