Synthesis and property of diazocine derivatives substituted with imidazole in various positions

ABSTRACT

TIACA-I, TIACA-II were synthesized by changing the substitution position of the imidazole group in the diazocine core. TIACA-I, TIACA-II in the film state showed absorption in the range of 354 to 392 nm and exhibited blue photoluminescence (PL) emissions at 448 and 462 nm, respectively. The PL wavelength of TIACA-II is red-shifted by 14 nm than that of TIACA-I due to the electron-donating intensity depending on the position of the imidazole group. The use of TIACA-II in a non-doped OLED device resulted in blue emission with current efficiency of 2.84 cd/A and CIE of (0.15, 0.18).     

多光束在分形粗糙表面散射的仿真

采用矩量法(MOM),分析了多光束在分形粗糙导体表面的散射分布.对在不同入射角、光束宽度控制因子、光束照射区宽度、表面均方根高度和表面分维数情况下的散射进行了数值仿真.仿真结果表明了各参量的变化对散射分布的影响.根据仿真计算结果给出了最佳的散射测量区域,为减少多光束测量的误差提供了一定的参考.     

Faraday镜预转角对FMOCT输出光偏振态的影响

通过计算机仿真,运用琼斯矩阵理论分析了Faraday镜预转角对法拉第镜式光学电流互感器输出光偏振态的影响.实验测量了Faraday镜实际预转角的大小,测量了外磁场的改变对Faraday镜预转角的影响.外磁场的存在和变化使Faraday镜预转角偏离初始值,并使系统输出光由理想状态下的线偏振光退化成椭圆偏振光,并引起法拉第镜式光学电流互感器工作灵敏度和稳定性的下降.提出了用电磁屏蔽解决外界磁场影响的方法.     

中国散裂中子源旋转线圈测量系统研制

中国散裂中子源(CSNS)加速器主要由一台直线加速器、一台快循环加速器以及低能、高能输运线组成。针对CSNS加速器部分直流磁铁研制了一套旋转线圈测量系统。对系统的研制方案、功能、精度、完成的磁铁类型以及部分测量结果进行介绍。该系统解决了CSNS批量磁铁之间的不同中心高度、质量、有效长度、磁场强度的兼容性难题。经过测试运行,积分场测量重复性误差好于±0.02%,空间谐波重复性误差好于0.005%,磁中心测量重复性误差好于±0.03 mm,顺利完成了中国散裂中子源工程150台多种类型磁铁的检测任务。     

MgO和Si上NbN超薄薄膜的生长研究

我们在单晶MgO(100)、Si(100)和SiOx/Si基片上成功生长了纳米厚度的超薄NbN薄膜,利用现代分析手段:X射线衍射(XRD)、透射电子显微镜(TEM)、原子力显微镜(AFM)等技术分析研究了所制备的超薄NbN薄膜的微观结构、厚度、表面界面情况等物理特性。研究表明,在MgO(100)基片上获得了外延生长的单晶NbN超薄薄膜,在Si(100)和SiOx/Si基片上获得的是多晶NbN超薄薄膜。厚度均约6nm左右。这些超薄薄膜的超导转变温度分别为:MgO上薄膜是14.46K,Si和SiOx上薄膜分别是8.74K和9.01K.     

Spherical shape BaO-ZnO-B<Subscript>2</Subscript>O<Subscript>3</Subscript>-SiO<Subscript>2</Subscript> glass powders prepared by spray pyrolysis

Fine-sized BaO-ZnO-B₂O₃-SiO₂ (BZBS) glass powders were directly prepared by high temperature spray pyrolysis. The hollow glass powders prepared at low preparation temperature of 1000 °C had a low density of 2.65 g/cm³. However, the densities of the BZBS powders obtained at preparation temperatures of 1200 and 1400 °C were each 3.92 and 4.13 g/cm³. The mean size of the BZBS glass powders prepared by spray pyrolysis at preparation temperature of 1400 °C was 0.98 μm. The glass transition temperature (T_g) of the prepared BZBS glass powders was 518.9 °C. The dielectric layers formed from the prepared BZBS glass powders with a dense structure had a clean surface and a dense inner structure without voids at the firing temperature of 580 °C. The transparencies of the dielectric layers formed from the prepared BZBS glass powders were higher than 90% within the visible range. PACS 42.70.Ce; 85.60.Pg; 71.55.Jv     

同轴线-矩形波导结散射特性的数值分析

 提出了一种数值分析同轴线-矩形波导结散射特性的模式匹配方法。采用同轴线和矩形波导的本征模函数表示电磁场分量,通过同轴线-矩形波导结截面横向场分量匹配获得波导结的散射参数,引入电场模式匹配矩阵的解析形式提高了计算效率。给出了基于模式匹配法数值仿真的各种同轴线-矩形波导结散射特性及仿真结果分析,并与3维全电磁波分析软件HFSS的仿真结果进行了比较,二者非常吻合。模式匹配法计算效率高,能广泛应用于微波毫米波元器件及系统结构的设计与优化。     

普物实验教学应科学引导学生进行知能整合

以“电池电动势和内阻的测定”为例,简述了在普物实验教学中,科学引导学生进行知能整合的过程,使科学知识与相关知识的应用实现了最佳的整合,提高了学生设计实验、实验测量、科学评定实验过程及测量结果的能力。     

基于法布里-珀罗标准具的532 nm多普勒测风激光雷达系统设计和分析

 设计了采用532 nm 种子注入稳频钇铝石榴石（YAG）激光器作为辐射源的基于四通道法布里-珀罗标准具的瑞利和米散射测风激光雷达系统。介绍了激光雷达的多普勒测量基本原理;给出了雷达系统的主要参数,重点对基于分子后向散射信号的外侧双通道标准具的带宽、自由谱间距、峰值间距等指标进行了详细设计与分析,确定了内侧双通道标准具参数;对全系统速度灵敏度、信噪比与探测距离的关系进行了理论模拟。结果表明,可以实现从边界层至对流层高低空一体化探测。     

Measurement of the wrong-sign decays D0 --> K+ pi- pi0 and D0 --> K+ pi- pi+ pi-, and search for CP violation

Using 281 fb-1 of data from the Belle experiment recorded at or near the (4S) resonance, we have measured the rates of the "wrong-sign" decays D0 --> K+ pi- pi0 and D0 --> K+ pi- pi+ pi- relative to those of the Cabibbo-favored decays D0 --> K- pi+ pi0 and D0 --> K- pi+ pi+ pi-. These wrong-sign decays proceed via a doubly Cabibbo-suppressed amplitude or via D0-D0 mixing; the latter has not yet been observed. We obtain R(WS)(K pi pi0) = [0.229 +/- 0.015(stat)(+0.013)(-0.009)(syst)]% and R(WS)(K3pi) = [0.320 +/- 0.018(stat)(+0.018)(0.013)(syst)]%. The CP asymmetries are measured to be -0.006 +/- 0.053 and -0.018 +/- 0.044 for the K+ pi- pi0 and K+ pi- pi+ pi- final states, respectively.