A novel MI-insensitive and filterless frequency octupling scheme based on two parallel dual-parallel Mach–Zehnder modulators

A novel MI-insensitive and filterless frequency octupling scheme based on two parallel dual-parallel Mach–Zehnder modulators (DP-MZMs) is proposed. The proposed scheme is not sensitive to modulation index and relatively strong MMW signal with good radio frequency spurious suppression ratio (RFSSR) can be obtained without strict requirement on modulation index. Filterless feature makes the scheme quite suitable for wavelength division multiplexing (WDM) applications. For verification, a 60 GHz millimeter wave with 44 dB RFSSR is generated from a 7.5 GHz radio frequency wave by simulation. Performance of the proposed scheme has been characterized under different conditions including DC-bias drifts of MZMs, different amplitudes of RF inputs and different extinction ratios of MZMs.     

具时变刚度的相对转动非线性动力系统的周期解问题

建立了一类具有时变刚度,非线性阻尼力和强迫周期力项的相对转动非线性动力系统. 运用Mawhin重合度理论,得到了该模型的周期解存在唯一性结果,推广了已有的结果, 并且列举了具体的例子来说明本文的结果是新的. 关键词： 相对转动非线性动力系统 时变刚度 周期解 存在唯一性     

[四-(三-甲氧基-四-羟基)苯基]-锌卟啉-环糊精超分子体系研究

在中性磷酸盐缓冲溶液中,以紫外-可见分光光度法和荧光光谱法研究了对称性卟啉[四-(三-甲氧基-四-羟基)苯基]-锌卟啉(简称T(3-MO-4-HP)P-Zn)与α-CD、β-CD、γ-CD三种环糊精之间相互作用形成的超分子体系.结果表明T(3-MO-4HP)P-Zn卟啉与3种环糊精均形成1∶1的包结物.利用双倒数曲线法计算了T(3-MO-4-HP)P-Zn-CD超分子体系的包结常数,结果表明T(3-MO-4-HP)P-Zn与β-CD表现出最强的包结能力.     

Controllable synthesis of high aspect ratio Mg_2B_2O_5 nanowires and their applications in reinforced polyhydroxyalkanoate composites

Highly pure magnesium borate （Mg2B2O5） nanowires with an average diameter of - 30 nm, an average length of 15 μm, and a high aspect ratio of - 500 have been synthesized on a large scale via a two-step method. MgBO2（OH） nanowires with high aspect ratios were first prepared via a PVP-assisted hydrothermal technique. Using these nanowires as precursors, single crystalline Mg2B205 nanowires were synthesized by post-annealing treatment at a relatively low temperature of 700 ℃. The important effect of the MgBO2（OH）-Mg2B2O5 conversion process on the morphology of the Mg2B2O5 nanowires was investigated and it was indicated that the recrystallization process plays an important role in the protection of the one-dimensional （1D） nanostructure. Moreover, the rigidity and the toughness of the Mg2B2O5 nanowire- reinforced PHA composites were tremendously improved compared to those of the pure PHA. Our results demonstrate the effectiveness of Mg2B2O5 nanowires for reinforcement applications in polymer composites.     

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors(MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density Ditof the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness(EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy(HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO2 or Al2O3 dielectric layers.     

两种铽配合物与PVK混合体系的发光机理研究

研究了稀土配合物Tb(p-MBA)₃phen(样品Ⅰ)和Tb(p-ClBA)₃phen(样品Ⅱ)与导电聚合物材料PVK掺杂体系的光致发光和电致发光特性。发现在样品Ⅰ与PVK混合薄膜的光致发光中,除了三价铽离子的发光外,还能看到明显的PVK的发光;而在电致发光中,PVK的发光完全被抑制,只能看到Tb3+的绿光发射。对样品Ⅱ与PVK的混合发光层,无论其光致发光谱还是电致发光谱,都没有看到410 nm处PVK的发射。进一步测量两种材料的激发光谱,初步探讨了器件的发光机理。样品Ⅰ的发光可能来源于两个方面,一是PVK到稀土配合物的不完全的能量传递,二是由于载流子俘获机理;样品Ⅱ的发光则是由于PVK到稀土配合物的完全的能量传递。     

吖啶红与铬(Ⅵ)的高灵敏度荧光反应及应用

研究了在硫酸介质中,铬(Ⅵ)氧化吖啶红荧光增强反应的最佳实验条件,建立了测定痕量铬(Ⅵ)的新的高灵敏度荧光分析法。该方法的检出限为0.6 μg·L-1,线性范围为2.0～32 μg·L-1,对含量为4.0和28 μg·L-1的Cr(Ⅵ)标准溶液进行11次平行测定, 其相对标准偏差分别为2.0%和1.0%。该法用于电镀液、废铬酸洗液及合金钢中痕量铬(Ⅵ)的测定,与标准样品和二苯碳酰二肼分光光度法进行了对照,获得了满意结果。     

Superamphiphobic,light-trapping FeSe2 particles with a micro-nano hierarchical structure obtained by an improved solvothermal methodSuperamphiphobic,light-trapping FeSe2 particles with a micro-nano hierarchical structure obtained by an improved solvothermal methodSuperamphiphobic,light-trapping FeSe2 particles with a micro-nano hierarchical structure obtained by an improved solvothermal method

Wettability and the light-trapping effect of FeSe2 particles with a micro-nano hierarchical structure have been inves- tigated. Particles are synthesized by an improved solvothermal method, wherein hexadecyl trimetbyl ammonium bromide （CTAB） is employed as a surfactant. After modifying the particles with heptadecafluorodecyltrimethoxy-silane （HTMS）, we find that the water contact angle （WCA） of the FeSe2 particles increases by 6.1~ and the water sliding angle （WSA） decreases by 2.5~ respectively, and the diffuse reflectivity decreases 29.4% compared with similar FeSe2 particles synthe- sized by the conventional method. The growth process of the particles is analyzed and a growth scenario is given. Upon altering the PH values of the water, we observe that the superhydrophobic property is maintained quite consistently across a wide PH range of 1-14. Moreover, the modified particles were also found to be superoleophobic. To the best of our knowledge, there is no systematic research on the wettability of FeSe2 particles, so our research provides a reference for other researchers.     

球磨法对不同基质上转换发光的影响

分别利用高温固相法和高能球磨法,在反应温度为1 100 ℃、反应时间为2 h的条件下合成了以Y₂O₃、La₂O₃、LiTaO₃为基质的双掺和三掺Tm³⁺、Er³⁺、Yb³⁺发光粉。XRD测试结果表明,高能球磨法制备的Y₂O₃、La₂O₃、LiTaO₃材料的相纯度高于高温固相法。用980 nm红外激光分别对两种合成方法制得的样品粉末进行发光性质的检测,结果表明高能球磨法制得样品的发光强度高于高温固相法样品。不同基质样品的上转换发光性质表现为：Tm³⁺、Yb³⁺掺杂呈蓝光;Er³⁺、Yb³⁺掺杂呈黄光;Tm³⁺、Er³⁺、Yb³⁺三掺样品的发光减弱,颜色可调。     

Engineering Double-Walled Carbon Nanotubes by Ar Plasma

Double-walled carbon nanotubes （DWCNTs） have been found to be promising nano-materials for nano-mechanical and nano-electrical devices due to their double-walled structures. Modifying DWCNTs would be one of the key technologies for device construction. We demonstrate engineering the geometry of DWCNTs by etching with Ar plasma. The characterization by atomic force rnicroscopy indicates that single atomic carbon layers could be removed from DWCNTs by Ar plasma. The etching effect is further investigated by electrical measurements on DWCNT field-effect transistors, which allow us to study the interwall screen effect as well.