13C NMR study of propene dimerization on NiO/SiO2 catalysts

¹³C NMR studies of propene adsorbed on NiO/SiO₂ catalysts show -complex formation for propene with Ni²⁺ ions at low temperatures. Via a coordinative mechanism, 4-methylpentenes and, to a lower extent, 1-hexene are formed. No other isomers are formed as primary products but only via isomerization of the primary products.

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¹³C , NiO/SiO₂ - Ni²⁺ . 4- 1- . .

     

Ultratrace analysis and isotope ratio measurements of long-lived radioisotopes by resonance ionization mass spectrometry (RIMS)

Resonance Ionization Mass Spectrometry (RIMS) is a sensitive and selective method for ultratrace analysis of long-lived radioisotopes and isotope ratio measurements. It provides extremely high isobaric suppression and good overall efficiency. The experimental limits of detection are as low as 10⁶ atoms per sample and isotopic selectivities of 5×10¹² have been obtained. The widespread potential of RIMS, using different experimental arrangements, is demonstrated for the determination of the radiotoxic isotopes Pu-238 to Pu-244 and Sr-89/Sr-90 in various environmental samples as well as for Ca-41 in nuclear reactor components and biomedical samples.     

汞扩散泵——镉捕集阱高真空系统

我们在二级玻璃汞扩散泵的真空系统上使用了室温的镉膜阱,证明镉膜阱能有效地捕集汞蒸气,使被抽容器达到气压力10^-5—10^-7毫米汞数量级的高真空。我们较系统地试验了镉膜的条件对于极限气压的影响,实验结果表明,新蒸发的镉膜效果最好;将镉膜在10^-2毫米汞的气压下搁置10小时后对于极限气压的影响不大;但若将其在大气下搁置10小时,则极限气压约升高一个数量级;进一步延长在大气中的暴露时间(达300天),对极限气压无更大的影响。初步的寿命试验表明,扩散泵工作140小时之后,极限气压才较显著地上升。降低镉膜阱的温度、增加镉膜阱的数目和被抽容器的高温烘烤都是提高真空度的有效途径;在实验中考虑了这些因素,我们曾获得了气压低达10^-9毫米汞数量级的超高真空。     

新型电荷转移多金属氧酸盐的合成和红外光谱研究

以4种道森结构的杂多酸和3种芳香杂环化合物为原料合成了11种新型电荷转移多金属氧酸盐，研究了它们的红外光谱。结果表明：杂多酸形成电荷转移盐后，杂多阴离子的结构略有畸变但仍保持道森结构；有机给体和杂多阴离子之间存在电荷转移相互作用。     

Integration of fluorescence collection optics with?a?microfabricated surface electrode ion trap

We have successfully demonstrated an integrated optical system for collecting the fluorescence from a trapped ion. The system, consisting of an array of transmissive, dielectric micro-optics and an optical fiber array, has been intimately incorporated into the ion-trapping chip without negatively impacting trapping performance. Epoxies, vacuum feedthrough, and optical component materials were carefully chosen so that they did not degrade the vacuum environment, and we have demonstrated light detection as well as ion trapping and shuttling behavior comparable to trapping chips without integrated optics, with no modification to the control voltages of the trapping chip.     

一类亚解析函数的复合边值问题

本文研究了一类亚解析函数的复合边值问题.利用经典的消去法和对称扩张,得到了边值问题的可解条件和解的表达式.推广了解析函数的相应理论.     

Rapid, robust, clean, catalyst-free synthesis of 2-halo-3-carboxyindoles

A novel synthesis of 2-halo-3-carboxyindoles from 2-(2,2-dihalovinyl)anilines was discovered. Reaction conditions and substrate applicability were studied. Optimally, the reaction takes only minutes when these substrates are heated in DMSO at 120 °C in the presence of cesium carbonate. However, the reaction is robust and takes place at a wide range of temperatures, is tolerant of aqueous reaction conditions, and can be performed in a variety of polar solvent/carbonate base combinations—where the limiting factor is base solubility. A wide range of substituents is tolerated on the 2-(2,2-dihalovinyl)anilines, and yields are generally high, requiring only acidic aqueous work-up to obtain pure products. No catalyst is required for the transformation. The mechanism is believed to involve initial formation of an alkynyl bromide intermediate followed by ring closure and carbon dioxide trapping, leading to product formation.     

Higher borides and oxygen-enriched Mg–B–O inclusions as possible pinning centers in nanostructural magnesium diboride and the influence of additives on their formation

The study of high pressure (2 GPa) synthesized MgB₂-based materials allows us to conclude that higher borides (with near MgB₁₂ stoichiometry) and oxygen-enriched Mg–B–O inclusions can be pinning centers in nanostructural magnesium diboride matrix (with average grain sizes of 15–37 nm). It has been established that additions of Ti or SiC as well as manufacturing temperature can affect the size, amount and distribution of these inclusions in the material structure and thus, influence critical current density. The superconducting behavior of materials with near MgB₁₂ stoichiometry of matrix is discussed.